PROCEEDINGS VOLUME 4186
PHOTOMASK TECHNOLOGY | 13-15 SEPTEMBER 2000
20th Annual BACUS Symposium on Photomask Technology
PHOTOMASK TECHNOLOGY
13-15 September 2000
Monterey, CA, United States
Photomask Patterning
Proc. SPIE 4186, Lithographic performance results for a new 50-kV electron-beam mask writer, 0000 (22 January 2001); doi: 10.1117/12.410672
Proc. SPIE 4186, New architecture for laser pattern generators for 130 nm and beyond, 0000 (22 January 2001); doi: 10.1117/12.410691
Proc. SPIE 4186, Performance of JBX-9000MV with negative-tone resist for 130-nm reticle, 0000 (22 January 2001); doi: 10.1117/12.410702
Proc. SPIE 4186, New concept photomask repeater with stitching exposure technique, 0000 (22 January 2001); doi: 10.1117/12.410713
Proc. SPIE 4186, Improved throughput in 0.6-NA laser reticle writers, 0000 (22 January 2001); doi: 10.1117/12.410724
Materials, Processes, and Process Integration
Proc. SPIE 4186, Process development for 257-nm photomask fabrication using environmentally stable chemically amplified photoresists, 0000 (22 January 2001); doi: 10.1117/12.410734
Proc. SPIE 4186, Plasma etch of binary Cr masks: CD uniformity study of photomasks utilizing varying Cr loads: III, 0000 (22 January 2001); doi: 10.1117/12.410745
Proc. SPIE 4186, Chrome dry etch process characterization using surface nanoprofiling, 0000 (22 January 2001); doi: 10.1117/12.410753
Proc. SPIE 4186, Experimental study on the possibility of chemically amplified resists for mask production for device generations < 180 nm, 0000 (22 January 2001); doi: 10.1117/12.410764
Data Preparation and Design
Proc. SPIE 4186, Mask manufacturing rule check: how to save money in your mask shop, 0000 (22 January 2001); doi: 10.1117/12.410681
Proc. SPIE 4186, Using manufacturing rule check to prescreen reticle inspection databases, 0000 (22 January 2001); doi: 10.1117/12.410684
Proc. SPIE 4186, Methods used to streamline data preparation for memory products, 0000 (22 January 2001); doi: 10.1117/12.410685
Proc. SPIE 4186, ASIC data preparation management for OPC, 0000 (22 January 2001); doi: 10.1117/12.410686
Proc. SPIE 4186, Efficient automated tapeout system, 0000 (22 January 2001); doi: 10.1117/12.410687
Defects, Inspection, and Repair
Proc. SPIE 4186, FIB-based local deposition of dielectrics for phase-shift mask modification, 0000 (22 January 2001); doi: 10.1117/12.410688
Proc. SPIE 4186, Advanced FIB mask repair technology for ArF lithography: II, 0000 (22 January 2001); doi: 10.1117/12.410689
Proc. SPIE 4186, Multibeam high-resolution UV wavelength reticle inspection, 0000 (22 January 2001); doi: 10.1117/12.410690
Proc. SPIE 4186, In-process defect inspection and characterization study for dry etching chrome-on-quartz binary masks, 0000 (22 January 2001); doi: 10.1117/12.410692
Proc. SPIE 4186, Correlation of reticle defects detectability and repairs to ArF wafer printability for 0.13-um design rule with binary OPC/SB mask, 0000 (22 January 2001); doi: 10.1117/12.410693
Mask Metrology, Mask Error, and Specifications
Proc. SPIE 4186, Practical defect-sizing issues for UV inspection of 248-nm embedded attenuated PSM contact layer, 0000 (22 January 2001); doi: 10.1117/12.410694
Proc. SPIE 4186, Pellicle-induced distortions in advanced optical reticles, 0000 (22 January 2001); doi: 10.1117/12.410695
Proc. SPIE 4186, Reticle error correction for lithography tool qualification benefits and limitations, 0000 (22 January 2001); doi: 10.1117/12.410696
Proc. SPIE 4186, Analysis of photomask distortion caused by blank materials and open ratios, 0000 (22 January 2001); doi: 10.1117/12.410697
Proc. SPIE 4186, Innovations in lithography metrology for characterization of phase-shift mask materials, 0000 (22 January 2001); doi: 10.1117/12.410698
Advanced Mask Technology
Proc. SPIE 4186, UV inspection of EUV and SCALPEL reticles, 0000 (22 January 2001); doi: 10.1117/12.410699
Proc. SPIE 4186, Ion projection lithography: new insights and results of this NGL technology, 0000 (22 January 2001); doi: 10.1117/12.410700
Proc. SPIE 4186, 157-nm lithography for 100-nm generation and beyond: progress and status, 0000 (22 January 2001); doi: 10.1117/12.410701
Wafer, PSM, and Mask Process Integration
Proc. SPIE 4186, Materials for an attenuated phase-shifting mask in 157-nm lithography, 0000 (22 January 2001); doi: 10.1117/12.410703
Proc. SPIE 4186, Printing 0.13-um contact holes using 193-nm attenuated phase-shifting masks, 0000 (22 January 2001); doi: 10.1117/12.410704
Proc. SPIE 4186, KrF attenuated PSM defect printability and detectability for 120-nm actual DRAM patterning process, 0000 (22 January 2001); doi: 10.1117/12.410705
Proc. SPIE 4186, Realization of mass production for 130-nm node and future applicatiton for high transmission using ZrSi-based attenuated phase-shift mask in ArF lithography, 0000 (22 January 2001); doi: 10.1117/12.410706
Proc. SPIE 4186, Effect of mask reduction ratio in alternating phase-shift masks, 0000 (22 January 2001); doi: 10.1117/12.410707
Resolution Enhancement Techniques
Proc. SPIE 4186, Plasma etching of quartz for the fabrication of alternating aperture phase-shift photomasks: etch rate uniformity study utilizing a next-generation ICP source, 0000 (22 January 2001); doi: 10.1117/12.410708
Proc. SPIE 4186, Proximity effects in alternating aperture phase-shifting masks, 0000 (22 January 2001); doi: 10.1117/12.410709
Proc. SPIE 4186, Fabricating 0.10-um line patterns using attenuated phase-shift masks, 0000 (22 January 2001); doi: 10.1117/12.410710
Proc. SPIE 4186, Potentialities of sub-100-nm optical lithography of alternating and phase-edge phase-shift mask for ArF lithography, 0000 (22 January 2001); doi: 10.1117/12.410711
Proc. SPIE 4186, Sub-120-nm technology compatibility of attenuated phase-shift mask in KrF and ArF lithography, 0000 (22 January 2001); doi: 10.1117/12.410712
Proc. SPIE 4186, Balancing of alternating phase-shifting masks for practical application: modeling and experimental verification, 0000 (22 January 2001); doi: 10.1117/12.410714
Friday Special Session: "Low k1 Limbo, How low can we go?"
Proc. SPIE 4186, High-performance devices in the new century: optical lithography and mask strategy for 0.13-um SoC (Photomask Japan 2000 panel discussion review), 0000 (22 January 2001); doi: 10.1117/12.410715
Proc. SPIE 4186, Phase phirst! An improved strong-PSM paradigm, 0000 (22 January 2001); doi: 10.1117/12.410716
Proc. SPIE 4186, Modeling defect-feature interactions in the presence of aberrations, 0000 (22 January 2001); doi: 10.1117/12.410717
Proc. SPIE 4186, Requirements for reticle and reticle material for 157-nm lithography: requirements for hard pellicle, 0000 (22 January 2001); doi: 10.1117/12.410718
Proc. SPIE 4186, Impact of alternating phase-shift mask quality on 100-nm gate lithography, 0000 (22 January 2001); doi: 10.1117/12.410719
Proc. SPIE 4186, Technological challenges in implementation of alternating phase-shift mask, 0000 (22 January 2001); doi: 10.1117/12.410720
Proc. SPIE 4186, Evaluation of molybdenum silicide for use as a 193-nm phase-shifting absorber in photomask manufacturing, 0000 (22 January 2001); doi: 10.1117/12.410721
Proc. SPIE 4186, Emergence of assist feature OPC era in sub-130-nm DRAM devices, 0000 (22 January 2001); doi: 10.1117/12.410722
Poster Session
Proc. SPIE 4186, Eddy current evaluation for a high-resolution EB system, 0000 (22 January 2001); doi: 10.1117/12.410723
Proc. SPIE 4186, Effect of beam blur in mask fabrication, 0000 (22 January 2001); doi: 10.1117/12.410725
Proc. SPIE 4186, Integration of the Micronic Omega6500 into the mask manufacturing environment, 0000 (22 January 2001); doi: 10.1117/12.410726
Proc. SPIE 4186, Localized resist heating due to electron-beam patterning during photomask fabrication, 0000 (22 January 2001); doi: 10.1117/12.410727
Proc. SPIE 4186, Management of pattern generation system based on i-line stepper, 0000 (22 January 2001); doi: 10.1117/12.410728
Proc. SPIE 4186, Comprehensive simulation of e-beam lithography processes using PROLITH/3D and TEMPTATION software tools, 0000 (22 January 2001); doi: 10.1117/12.410729
Proc. SPIE 4186, Improved process control of photomask fabrication in e-beam lithography, 0000 (22 January 2001); doi: 10.1117/12.410730
Proc. SPIE 4186, Investigations of CD variation in Cr dry etching process, 0000 (22 January 2001); doi: 10.1117/12.410731
Proc. SPIE 4186, Evaluation of photomask blank layer parameters with an x-ray reflection method and photomask property distribution, 0000 (22 January 2001); doi: 10.1117/12.410732
Proc. SPIE 4186, Dry etching technology of Cr and MoSi layers using high-density plasma source, 0000 (22 January 2001); doi: 10.1117/12.410733