PROCEEDINGS VOLUME 4227
INTERNATIONAL SYMPOSIUM ON MICROELECTRONICS AND ASSEMBLY | 27 NOVEMBER - 2 DECEMBER 2000
Advanced Microelectronic Processing Techniques
IN THIS VOLUME

0 Sessions, 31 Papers, 0 Presentations
Epitaxy  (5)
INTERNATIONAL SYMPOSIUM ON MICROELECTRONICS AND ASSEMBLY
27 November - 2 December 2000
Singapore, Singapore
Epitaxy
Proc. SPIE 4227, Thin film epitaxy on Si for microelectronics, 0000 (24 October 2000); doi: 10.1117/12.405367
Proc. SPIE 4227, Epitaxial CoSi2 on Si(100) by oxide-mediated epitaxy, 0000 (24 October 2000); doi: 10.1117/12.405377
Proc. SPIE 4227, Characterization of Si-doped GaInAsP/GaAs grown by solid source molecular beam epitaxy, 0000 (24 October 2000); doi: 10.1117/12.405385
Proc. SPIE 4227, Self-organized growth of InP on GaAs substrate by MOCVD, 0000 (24 October 2000); doi: 10.1117/12.405393
Proc. SPIE 4227, Pseudomorphic InxGa1-xAs/InyAl1-yAs high-electron mobility transistor structures grown by solid source molecular beam epitaxy, 0000 (24 October 2000); doi: 10.1117/12.405394
Compound Semiconductors and Photonic Materials
Proc. SPIE 4227, Transmission line measurement of gold contact on the arsenic-ion-implanted GaAs after rapid thermal annealing, 0000 (24 October 2000); doi: 10.1117/12.405395
Proc. SPIE 4227, High microwave performance of InGaP/GaAs HBT with beryllium-doped base grown by solid source MBE, 0000 (24 October 2000); doi: 10.1117/12.405396
Proc. SPIE 4227, InP/InGaAs/InP double heterojunction bipolar transistors with improved dc and microwave performance grown by solid source molecular beam-epitaxy, 0000 (24 October 2000); doi: 10.1117/12.405397
Proc. SPIE 4227, 1.54-um erbium luminescence in silicon-germanium, 0000 (24 October 2000); doi: 10.1117/12.405368
Proc. SPIE 4227, Luminescence properties of Nd3+-doped LiNbO3 and LiTaO3 sol-gel powders, 0000 (24 October 2000); doi: 10.1117/12.405369
Device Characterization
Proc. SPIE 4227, Advanced integrated process and ESD protection structure to optimize the GOI, HCE, and ESD performance for subquarter micron technology, 0000 (24 October 2000); doi: 10.1117/12.405370
Proc. SPIE 4227, Effect of surface conditions on the measurement of minority carrier diffusion lengths using the surface photovoltage technique, 0000 (24 October 2000); doi: 10.1117/12.405371
Proc. SPIE 4227, Analysis of N-channel transistor punch-through related to STI process, 0000 (24 October 2000); doi: 10.1117/12.405372
Proc. SPIE 4227, Spreading resistance profiling of ultrashallow junction NPN BJT with carrier redistribution effect, 0000 (24 October 2000); doi: 10.1117/12.405373
Physical Analysis
Proc. SPIE 4227, Ultrashallow depth profiling of B deltas in Si using a CAMECA IMS 6f, 0000 (24 October 2000); doi: 10.1117/12.405374
Proc. SPIE 4227, Use of sample rotation in SIMS profiling of Ta barrier layers to Cu diffusion, 0000 (24 October 2000); doi: 10.1117/12.405375
Dielectrics/Oxides
Proc. SPIE 4227, Effect of deposition conditions on the properties of HDP-CVD-fluorinated silicon oxide (SiOF), 0000 (24 October 2000); doi: 10.1117/12.405376
Proc. SPIE 4227, Impact of boron penetration on gate oxide reliability and device performance in a dual-gate oxide process, 0000 (24 October 2000); doi: 10.1117/12.405378
Proc. SPIE 4227, Importance of oxide capping on the suppression of dopant outdiffusion for salicide block process, 0000 (24 October 2000); doi: 10.1117/12.405379
Advanced Processing
Proc. SPIE 4227, Application of excimer laser annealing in the formation of ultrashallow p+/n junctions, 0000 (24 October 2000); doi: 10.1117/12.405380
Proc. SPIE 4227, Behavior of Ta thin film as a diffusion barrier in the Cu/barrier/SiO2 system, 0000 (24 October 2000); doi: 10.1117/12.405381
Proc. SPIE 4227, Investigation of near-room-temperature self-annealing of electrochemical-deposited (ECD) blanket copper films, 0000 (24 October 2000); doi: 10.1117/12.405382
Proc. SPIE 4227, Characterization of Ge nanocrystals in co-sputtered Ge+SiO2 system using Raman and TEM techniques, 0000 (24 October 2000); doi: 10.1117/12.405383
Proc. SPIE 4227, Influence of high-substrate-bias voltage on the characteristics of DLC coatings, 0000 (24 October 2000); doi: 10.1117/12.405384
Poster Session
Proc. SPIE 4227, Low threshold current density and high-quantum-efficiency 980-nm cw QW laser, 0000 (24 October 2000); doi: 10.1117/12.405386
Proc. SPIE 4227, Effects of Zn doping in the substrate on the quantum well intermixing in GaAs/Al0.24Ga0.76As single quantum well structures, 0000 (24 October 2000); doi: 10.1117/12.405387
Proc. SPIE 4227, Implanted boron distribution in p+n structures using scanning capacitance microscopy, 0000 (24 October 2000); doi: 10.1117/12.405388
Proc. SPIE 4227, Mechanism of instability on device's characteristics due to intermetal dielectrics with low-k material and the modified process, 0000 (24 October 2000); doi: 10.1117/12.405389
Proc. SPIE 4227, Effect of flash copper on Cu diffusion, 0000 (24 October 2000); doi: 10.1117/12.405390
Proc. SPIE 4227, Plasma removal of post-RIE residues for dual-damascence processing, 0000 (24 October 2000); doi: 10.1117/12.405391
Proc. SPIE 4227, Improvement of green emission from Tb3+:GdOBr phosphors by Ce3+ codoping, 0000 (24 October 2000); doi: 10.1117/12.405392
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