PROCEEDINGS VOLUME 4278
SYMPOSIUM ON INTEGRATED OPTICS | 20-26 JANUARY 2001
Light-Emitting Diodes: Research, Manufacturing, and Applications V
SYMPOSIUM ON INTEGRATED OPTICS
20-26 January 2001
San Jose, CA, United States
LEDs for Solid State Lighting and High-Brightness Applications
Proc. SPIE 4278, Automotive LED lamp lighted appearance, 0000 (14 May 2001); doi: 10.1117/12.426842
Proc. SPIE 4278, Application of white LED lighting to energy-saving-type street lamps, 0000 (14 May 2001); doi: 10.1117/12.426850
Visible AlInGaP and AlGaAs LEDs
Proc. SPIE 4278, High-brightness AlGaInP light-emitting diodes using surface texturing, 0000 (14 May 2001); doi: 10.1117/12.426852
Proc. SPIE 4278, Optical properties and electronic requirements for low-temperature operation of yellow semiconductor LEDs, 0000 (14 May 2001); doi: 10.1117/12.426853
Proc. SPIE 4278, High-efficiency 650-nm thin film light-emitting diodes, 0000 (14 May 2001); doi: 10.1117/12.426854
Resonant Cavity LEDs
Proc. SPIE 4278, Red and orange resonant-cavity LEDs, 0000 (14 May 2001); doi: 10.1117/12.426855
Proc. SPIE 4278, Visible-light-emitting diodes based on microcavity concepts, 0000 (14 May 2001); doi: 10.1117/12.426832
Proc. SPIE 4278, Internal quantum efficiency of AlGaInP microcavity light-emitting diodes, 0000 (14 May 2001); doi: 10.1117/12.426834
Proc. SPIE 4278, 880-nm surface-emitting microcavity light-emitting diode, 0000 (14 May 2001); doi: 10.1117/12.426835
Proc. SPIE 4278, Angular emission profiles and coherence length measurements of highly efficient,low-voltage resonant-cavity light-emitting diodes operating around 650 nm, 0000 (14 May 2001); doi: 10.1117/12.426836
High Extraction Efficiency Structures
Proc. SPIE 4278, Light extraction mechanisms in surface-textured light-emitting diodes, 0000 (14 May 2001); doi: 10.1117/12.426837
Proc. SPIE 4278, Light-emitting diode lamp design by Monte Carlo photon simulation, 0000 (14 May 2001); doi: 10.1117/12.426838
Proc. SPIE 4278, Efficient light-emitting diodes with radial outcoupling taper at 980- and 630-nm emission wavelength, 0000 (14 May 2001); doi: 10.1117/12.426839
Nitride LEDs I
Proc. SPIE 4278, GaN-based multiple quantum well light-emitting devices, 0000 (14 May 2001); doi: 10.1117/12.426840
Proc. SPIE 4278, Current crowding and optical saturation effects in GaInN/GaN LEDs grown on insulating substrates, 0000 (14 May 2001); doi: 10.1117/12.426843
Nitride LEDs II
Proc. SPIE 4278, Influence of barrier growth temperature on the properties of InGaN/GaN quantum wells, 0000 (14 May 2001); doi: 10.1117/12.426844
Proc. SPIE 4278, Direct observation of the nonradiative recombination processes in InGaN-based LEDs probed by the third-order nonlinear spectroscopy, 0000 (14 May 2001); doi: 10.1117/12.426845
Proc. SPIE 4278, Silicon as a substrate in multiwafer MOVPE GaN technology, 0000 (14 May 2001); doi: 10.1117/12.426846
Proc. SPIE 4278, Medical lighting composed of LED arrays for surgical operation, 0000 (14 May 2001); doi: 10.1117/12.426847
Polymer and Organic LEDs
Proc. SPIE 4278, Temperature dependence of electroluminescence in tris-(8-hydroxy) quinoline aluminum (Alq3) light-emitting diode, 0000 (14 May 2001); doi: 10.1117/12.426848
Proc. SPIE 4278, Luminescence of thin films of conjugated rigid-rod polymer PBT, 0000 (14 May 2001); doi: 10.1117/12.426849
Rare-Earth-Doped LEDs and other LED Structures
Proc. SPIE 4278, III-V optically pumped mid-IR LEDs, 0000 (14 May 2001); doi: 10.1117/12.426851
LEDs for Solid State Lighting and High-Brightness Applications
Proc. SPIE 4278, High-power and single-mode DH InGaAsSb(Gd)/InAsSbP (lambda=3.3 um) diode lasers, 0000 (14 May 2001); doi: 10.1117/12.426833
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