Ultrafast Phenomena in Semiconductors V
20-26 January 2001
San Jose, CA, United States
Carrier Dynamics in Wide Bandgap Semiconductors I
Proc. SPIE 4280, Femtosecond carrier dynamics in GaN, (23 April 2001);doi: 10.1117/12.424722
Proc. SPIE 4280, Exciton dynamics in homoepitaxial GaN in the picosecond regime, (23 April 2001);doi: 10.1117/12.424730
Proc. SPIE 4280, Indium segregation in InGaN/GaN quantum well structures, (23 April 2001);doi: 10.1117/12.424737
Proc. SPIE 4280, Growth and optoelectronic properties of III-nitride quaternary alloys, (23 April 2001);doi: 10.1117/12.424740
Carrier Dynamics in Wide Bandgap Semiconductors II
Proc. SPIE 4280, Measurement of carrier transport and dynamics in wide bandgap semiconductors using femtosecond pump-probe techniques, (23 April 2001);doi: 10.1117/12.424741
Proc. SPIE 4280, Dynamics of spontaneous and stimulated emissions in GaN-based semiconductors, (23 April 2001);doi: 10.1117/12.424742
Proc. SPIE 4280, Theoretical modeling of femtosecond pump-probe spectroscopy in GaN systems, (23 April 2001);doi: 10.1117/12.424743
Proc. SPIE 4280, Optimizing GaN/AlGaN multiple quantum well structures by time-resolved photoluminescence, (23 April 2001);doi: 10.1117/12.424744
Carrier Dynamics in Wide Bandgap Semiconductors III
Proc. SPIE 4280, Phonon lifetimes and decay channels in single-crystalline bulk AlN, (23 April 2001);doi: 10.1117/12.424745
Proc. SPIE 4280, Femtosecond pump-probe spectroscopy of a highly excited GaN epilayer, (23 April 2001);doi: 10.1117/12.424723
Proc. SPIE 4280, Nonequilibrium electron distributions and energy loss rate in InxGa1-xAs1-yNy studied by picosecond Raman spectroscopy, (23 April 2001);doi: 10.1117/12.424724
Proc. SPIE 4280, Hot phonon effects on the ultrafast relaxation of photoexcited electrons in AlN, (23 April 2001);doi: 10.1117/12.424725
Proc. SPIE 4280, Femtosecond spectroscopy in ZnO with tunable UV pulses, (23 April 2001);doi: 10.1117/12.424726
Nonlinear Dynamics in Semiconductors I
Proc. SPIE 4280, Femtosecond-scale response of semiconductors to laser pulses, (23 April 2001);doi: 10.1117/12.424727
Proc. SPIE 4280, Interaction effects in optically dense materials, (23 April 2001);doi: 10.1117/12.424728
Proc. SPIE 4280, Effect of two-photon absorption on optical parametric oscillation, (23 April 2001);doi: 10.1117/12.424729
Ultrafast Spectroscopy and Instrumentation
Proc. SPIE 4280, Detection of ultrafast phenomena with streak cameras and PMTs, (23 April 2001);doi: 10.1117/12.424731
Proc. SPIE 4280, Time-correlated photon counting instrumentation for time-resolved photoluminescence measurement on semiconductor surfaces, (23 April 2001);doi: 10.1117/12.424732
Proc. SPIE 4280, Spin dynamics in nonlinear optical spectroscopy of Fermi sea systems, (23 April 2001);doi: 10.1117/12.424733
Nonlinear Dynamics in Semiconductors II
Proc. SPIE 4280, Adaptive all-order femtosecond dispersion compensation and pulse combining, (23 April 2001);doi: 10.1117/12.424734
Proc. SPIE 4280, Structure and second-order nonlinear optical properties of CuCl nanocrystal-doped thin films prepared by rf sputtering, (23 April 2001);doi: 10.1117/12.424735
Proc. SPIE 4280, Control of low-temperature-grown GaAs for ultrafast switching applications, (23 April 2001);doi: 10.1117/12.424736
Proc. SPIE 4280, Reflection second-harmonic generation from GaAs/AlAs and GaAs/AlGaAs multilayers, (23 April 2001);doi: 10.1117/12.424738
Proc. SPIE 4280, Electromagnetically induced transparency in a subband quantum well system, (23 April 2001);doi: 10.1117/12.424739
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