GaInNAs Lasers
Proc. SPIE 4283, Semiconductor laser in the 21st century, 0000 (9 July 2001); doi: 10.1117/12.432553
Proc. SPIE 4283, Faster-than-light effects and negative group delays in optics and electronics, and their applications, 0000 (9 July 2001); doi: 10.1117/12.432562
Proc. SPIE 4283, CBE growth of GaInNAs quantum wells and dots for long-wavelength lasers, 0000 (9 July 2001); doi: 10.1117/12.432570
Proc. SPIE 4283, Microscopic modeling of GalnNAs semiconductor lasers, 0000 (9 July 2001); doi: 10.1117/12.432581
Proc. SPIE 4283, Optical properties of GaInNAs/GaAs laser structures, 0000 (9 July 2001); doi: 10.1117/12.432590
Group-III Nitride Lasers and LEDs
Proc. SPIE 4283, Novel RiS-type InGaN MQW laser diodes on FIELO GaN substrates, 0000 (9 July 2001); doi: 10.1117/12.432599
Proc. SPIE 4283, Transverse-mode control in GaN-based laser diodes, 0000 (9 July 2001); doi: 10.1117/12.432610
Proc. SPIE 4283, Nonradiative recombination and efficiency of InGaN quantum well light-emitting diodes, 0000 (9 July 2001); doi: 10.1117/12.432626
Polarization Effects in Group-III Nitrides
Proc. SPIE 4283, AlGaN/GaN MBE heterostructures: polarization effects and their implication on electronic properties, 0000 (9 July 2001); doi: 10.1117/12.432554
Proc. SPIE 4283, Comparative study of the spontaneous and stimulated emission of M- and C-plane GaN/(Al,Ga)N quantum wells, 0000 (9 July 2001); doi: 10.1117/12.432555
VCSELs and Microcavity Physics
Proc. SPIE 4283, Time-domain Green's functions of realistic VCSEL cavities, 0000 (9 July 2001); doi: 10.1117/12.432556
Proc. SPIE 4283, Analysis of vector LP modes in VCSELs using the effective frequency method, 0000 (9 July 2001); doi: 10.1117/12.432557
Proc. SPIE 4283, Modeling and optimization of vertical-cavity semiconductor laser amplifiers, 0000 (9 July 2001); doi: 10.1117/12.432558
Proc. SPIE 4283, Transverse and polarization mode selection in VCSELs, 0000 (9 July 2001); doi: 10.1117/12.432559
Proc. SPIE 4283, Theoretical study of the polarization dependence of third-order optical nonlinearities in semiconductor microcavities, 0000 (9 July 2001); doi: 10.1117/12.432560
Quantum Cascade and Type-II Lasers
Proc. SPIE 4283, Modeling GaInAs/GaAsSb type-II superlattices grown on InP for optoelectronic applications, 0000 (9 July 2001); doi: 10.1117/12.432561
Proc. SPIE 4283, Modeling of optically pumped type-II lasers, 0000 (9 July 2001); doi: 10.1117/12.432563
Quantum Dots
Proc. SPIE 4283, Boundary element modeling of quantum structures, 0000 (9 July 2001); doi: 10.1117/12.432564
Proc. SPIE 4283, Long-wavelength In(Ga)As/GaAs quantum dot electroluminescent devices, 0000 (9 July 2001); doi: 10.1117/12.432565
Proc. SPIE 4283, Unipolar absorption of quantum dot: theoretical estimation of the cross-section, 0000 (9 July 2001); doi: 10.1117/12.432566
Physics of Quantum Well Lasers
Proc. SPIE 4283, Comparison of experimental and theoretical optical properties of GaInP lasers, 0000 (9 July 2001); doi: 10.1117/12.432567
Proc. SPIE 4283, Piezoelectric effects in InGaAs quantum well lasers grown on (111)B GaAs substrates, 0000 (9 July 2001); doi: 10.1117/12.432568
Proc. SPIE 4283, Optimization of the barrier height in 1.3-um InGaAsP multiple-quantum-well active regions for high-temperature operation, 0000 (9 July 2001); doi: 10.1117/12.432569
Proc. SPIE 4283, Temperature dependence of threshold current: a better criterion than T0?, 0000 (9 July 2001); doi: 10.1117/12.432571
Proc. SPIE 4283, Improved high-temperature operation of InGaAs/AlGaAs LOC SQW diode lasers by incorporation of short-period superlattice quantum-well barriers, 0000 (9 July 2001); doi: 10.1117/12.432572
Semiconductor Laser Dynamics
Proc. SPIE 4283, Emission dynamics of (GaIn)(NAs)/GaAs lasers emitting at 1.3 um, 0000 (9 July 2001); doi: 10.1117/12.432573
Proc. SPIE 4283, Theory and simulation of self- and mutual-diffusion of carrier density and temperature in semiconductor lasers, 0000 (9 July 2001); doi: 10.1117/12.432574
Proc. SPIE 4283, Stochastic polarization dynamics in vertical-cavity surface-emitting lasers described by simple rate equations, 0000 (9 July 2001); doi: 10.1117/12.432575
Proc. SPIE 4283, Spatial dynamics of VCSEL arrays, 0000 (9 July 2001); doi: 10.1117/12.432576
Dynamics of Coupled Semiconductor Lasers
Proc. SPIE 4283, Dynamical behavior of two distant mutually coupled semiconductor lasers, 0000 (9 July 2001); doi: 10.1117/12.432577
Proc. SPIE 4283, Regimes of nonlinear behavior in a laterally coupled laser diode, 0000 (9 July 2001); doi: 10.1117/12.432578
Proc. SPIE 4283, Experimental characterization and analysis of the static behavior of twin-ridge AlGaInAs laterally coupled lasers (LCDL), 0000 (9 July 2001); doi: 10.1117/12.432579
Proc. SPIE 4283, Spectral behaviors of semiconductor lasers locked to external light injected from a current-modulated laser, 0000 (9 July 2001); doi: 10.1117/12.432580
Dynamics of Semiconductor Lasers with External Feedback
Proc. SPIE 4283, Unidirectional synchronization of single-mode semiconductor lasers, 0000 (9 July 2001); doi: 10.1117/12.432582
Proc. SPIE 4283, Semiconductor lasers stabilized to spectral holes in rare-earth crystals, 0000 (9 July 2001); doi: 10.1117/12.432583
Proc. SPIE 4283, Excitability of lasers with integrated dispersive reflector, 0000 (9 July 2001); doi: 10.1117/12.432584
Devices for Optical Communication
Proc. SPIE 4283, HDBR (hybrid distributed Bragg reflector) for WDM and OTDM applications, 0000 (9 July 2001); doi: 10.1117/12.432585
Proc. SPIE 4283, Communicating with chaos, 0000 (9 July 2001); doi: 10.1117/12.432586
Proc. SPIE 4283, Cryptographic scheme using chaotic laser diodes subject to incoherent optical feedback, 0000 (9 July 2001); doi: 10.1117/12.432587
Proc. SPIE 4283, Control of period doubling in modulated semiconductor lasers and its application to all-optical clock division, 0000 (9 July 2001); doi: 10.1117/12.432588
Proc. SPIE 4283, Theoretical analysis of polarization sensitivity of strained bulk SOAs, 0000 (9 July 2001); doi: 10.1117/12.432589
Photonic Crystals I
Proc. SPIE 4283, Photonic crystals for optoelectronic devices, 0000 (9 July 2001); doi: 10.1117/12.432591
Proc. SPIE 4283, Design of photonic crystal optical microcavities, 0000 (9 July 2001); doi: 10.1117/12.432592
Proc. SPIE 4283, Growth area control of InAs quantum dots for photonic-crystal-based optical devices by selective MOCVD, 0000 (9 July 2001); doi: 10.1117/12.432593
Photonic Crystals II
Proc. SPIE 4283, Waveguide-based two-dimensional photonic crystals, 0000 (9 July 2001); doi: 10.1117/12.432594
Proc. SPIE 4283, Demonstration of high waveguide bending efficiency (>90%) in a photonic-crystal slab at 1.5-um wavelengths, 0000 (9 July 2001); doi: 10.1117/12.432595
Proc. SPIE 4283, Far-field pattern and mode structure of photonic-crystal-based planar distributed-feedback laser structures, 0000 (9 July 2001); doi: 10.1117/12.432596
Physics of Photodetectors
Proc. SPIE 4283, Photoresponse characteristics of uni-traveling-carrier photodiodes, 0000 (9 July 2001); doi: 10.1117/12.432597
Proc. SPIE 4283, Ultralow-noise avalanche photodiodes, 0000 (9 July 2001); doi: 10.1117/12.432598
Proc. SPIE 4283, Characteristics of dark current and photocurrent in superlattice infrared photodetectors, 0000 (9 July 2001); doi: 10.1117/12.432600
Photodetector Modeling
Proc. SPIE 4283, Physical modeling of high-speed PIN photodetectors, 0000 (9 July 2001); doi: 10.1117/12.432601
Proc. SPIE 4283, How avalanche pulses evolve in space and time, 0000 (9 July 2001); doi: 10.1117/12.432602
Proc. SPIE 4283, Dead-space theory predictions of excess-noise factor, breakdown voltage, and frequency response for thin avalanche photodiodes, 0000 (9 July 2001); doi: 10.1117/12.432603
Proc. SPIE 4283, Modeling of traveling-wave amplification photodetectors (TAP detectors), 0000 (9 July 2001); doi: 10.1117/12.432604
Proc. SPIE 4283, Nonwhite photodetection noise at the ouput of an optical amplifier: theory and experiment, 0000 (9 July 2001); doi: 10.1117/12.432605
Cavity Solitons
Proc. SPIE 4283, Controlling cavity solitons in semiconductor microcavities for optical information treatment, 0000 (9 July 2001); doi: 10.1117/12.432606
Proc. SPIE 4283, Self-organized optical structures in semiconductor microresonators: toward the observation of cavity solitons, 0000 (9 July 2001); doi: 10.1117/12.432607