PROCEEDINGS VOLUME 4287
SYMPOSIUM ON INTEGRATED OPTICS | 20-26 JANUARY 2001
In-Plane Semiconductor Lasers V
IN THIS VOLUME

0 Sessions, 23 Papers, 0 Presentations
Mid-IR I  (3)
Mid-IR II  (1)
High-Power I  (3)
SYMPOSIUM ON INTEGRATED OPTICS
20-26 January 2001
San Jose, CA, United States
Mid-IR I
Proc. SPIE 4287, Mid-IR interband cascade lasers: progress toward high performance, 0000 (6 June 2001); doi: 10.1117/12.429783
Proc. SPIE 4287, High-performance quantum cascade lasers grown by gas-source molecular beam epitaxy, 0000 (6 June 2001); doi: 10.1117/12.429791
Proc. SPIE 4287, Improved InAs/AlSb/GaSb heterostructures for quantum cascade laser application, 0000 (6 June 2001); doi: 10.1117/12.429802
Mid-IR II
Proc. SPIE 4287, Beam quality of mid-infrared angled-grating distributed-feedback lasers, 0000 (6 June 2001); doi: 10.1117/12.429803
Visible Lasers
Proc. SPIE 4287, High-efficiency and high-power laser diodes for CD-R/RW and DVD-RAM/RW, 0000 (6 June 2001); doi: 10.1117/12.429805
Proc. SPIE 4287, Enhanced-performance operation of InGaN MQW lasers with air/nitride-distributed Bragg reflector defined by focused ion beam etching, 0000 (6 June 2001); doi: 10.1117/12.429784
High-Power I
Proc. SPIE 4287, High-power coherent GaAs-based monolithic diode lasers, 0000 (6 June 2001); doi: 10.1117/12.429785
Proc. SPIE 4287, High-power long-wavelength lasers using GaAs-based quantum dots, 0000 (6 June 2001); doi: 10.1117/12.429786
Proc. SPIE 4287, High-power laser bars for 70-W cw (808 nm): a comparison between SQW and DQW, 0000 (6 June 2001); doi: 10.1117/12.429787
High-Power II
Proc. SPIE 4287, Performance of 3-W/100-um stripe diode laser at 950 and 810 nm, 0000 (6 June 2001); doi: 10.1117/12.429788
Proc. SPIE 4287, High reliability and facet temperature reduction in high-power 0.8-um Al-free active-region diode lasers, 0000 (6 June 2001); doi: 10.1117/12.429789
Proc. SPIE 4287, Large optical cavity waveguides for high-power diode laser applications, 0000 (6 June 2001); doi: 10.1117/12.429790
Novel Devices
Proc. SPIE 4287, Requirements for uncooled direct laser modulation at 10 Gb/s, 0000 (6 June 2001); doi: 10.1117/12.429792
Proc. SPIE 4287, External cavity multiline semiconductor laser for WDM applications, 0000 (6 June 2001); doi: 10.1117/12.429793
Proc. SPIE 4287, Bandwidth narrowing of a diode laser array by beam injection using photorefractive double phase conjugation, 0000 (6 June 2001); doi: 10.1117/12.429794
Proc. SPIE 4287, Tunable multisection Fabry-Perot laser, 0000 (6 June 2001); doi: 10.1117/12.429795
Long Wavelength Lasers on GaAs
Proc. SPIE 4287, High-quality GaInNAs active layers for 1.3-um lasers, 0000 (6 June 2001); doi: 10.1117/12.429796
Proc. SPIE 4287, GaInNAs-based long-wavelength lasers grown by MOCVD, 0000 (6 June 2001); doi: 10.1117/12.429797
Proc. SPIE 4287, MOCVD-grown 1.3-um InGaAsN multiple quantum well lasers incorporating GaAsP strain-compensation layers, 0000 (6 June 2001); doi: 10.1117/12.429798
Proc. SPIE 4287, Carrier confinement in strain-compensated InGaAs/GaAsP quantum well laser with temperature-insensitive threshold, 0000 (6 June 2001); doi: 10.1117/12.429799
Proc. SPIE 4287, InGaAs/GaAsP/InGaP strain-compensated quantum well (lambda=1.17 um) diode lasers on GaAs, 0000 (6 June 2001); doi: 10.1117/12.429800
Post-Deadline Session
Proc. SPIE 4287, High-brightness laser diodes using angular filtering by total reflection, 0000 (6 June 2001); doi: 10.1117/12.429801
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