PROCEEDINGS VOLUME 4293
SYMPOSIUM ON INTEGRATED OPTICS | 20-26 JANUARY 2001
Silicon-based and Hybrid Optoelectronics III
SYMPOSIUM ON INTEGRATED OPTICS
20-26 January 2001
San Jose, CA, United States
Planar Waveguide Devices, Modulators, and MOEMS I
Proc. SPIE 4293, AOSC multichannel electronic variable optical attenuator, 0000 (18 May 2001); doi: 10.1117/12.426926
Proc. SPIE 4293, Advances in developing SOI-based optical CDMA chips, 0000 (18 May 2001); doi: 10.1117/12.426938
Proc. SPIE 4293, Polarization compensation in silicon-on-insulator arrayed waveguide grating devices, 0000 (18 May 2001); doi: 10.1117/12.426939
Proc. SPIE 4293, Nanoscale light modulators from silicon-liquid crystal hybrids, 0000 (18 May 2001); doi: 10.1117/12.426940
Planar Waveguide Devices, Modulators, and MOEMS II
Proc. SPIE 4293, Surface-micromachined 2D optical scanners with optically flat single-crystalline silicon micromirrors, 0000 (18 May 2001); doi: 10.1117/12.426942
Poster Session
Proc. SPIE 4293, Temperature optical sensor based on a silicon bimodal Y branch, 0000 (18 May 2001); doi: 10.1117/12.426919
Planar Waveguide Devices, Modulators, and MOEMS II
Proc. SPIE 4293, Waveguides and modulators in 3C-SiC, 0000 (18 May 2001); doi: 10.1117/12.426920
Nanostructure Devices
Proc. SPIE 4293, Enhanced performance of Si opto-devices by SiGe nanostructures, 0000 (18 May 2001); doi: 10.1117/12.426921
Proc. SPIE 4293, Intersubband-electroluminescence from Si/SiGe quantum cascade structures, 0000 (18 May 2001); doi: 10.1117/12.426922
Proc. SPIE 4293, (SiGe/Si)n/Si quantum wells for enhanced spontaneous emission LEDs, 0000 (18 May 2001); doi: 10.1117/12.426923
Proc. SPIE 4293, Waveguiding in planar photonic crystals, 0000 (18 May 2001); doi: 10.1117/12.426924
Proc. SPIE 4293, Si/Si1-xGex/Si low-loss waveguides fabricated using selective epitaxial growth, 0000 (18 May 2001); doi: 10.1117/12.426925
Detectors and Emmitters
Proc. SPIE 4293, Novel waveguide MSM photodetectors on SOI substrates using silicides, 0000 (18 May 2001); doi: 10.1117/12.426927
Proc. SPIE 4293, Highly efficient Ge detector integrated with waveguide based on SOI technology, 0000 (18 May 2001); doi: 10.1117/12.426928
Proc. SPIE 4293, Materials processing technology for the integration of effective Ge p-i-n photodetectors on Si for Si microphotonics, 0000 (18 May 2001); doi: 10.1117/12.426929
Proc. SPIE 4293, p-i-n germanium photodetectors integrated on silicon substrates, 0000 (18 May 2001); doi: 10.1117/12.426930
Proc. SPIE 4293, Polycrystalline Ge detectors integrated on SOI waveguide: device modeling and experimental results, 0000 (18 May 2001); doi: 10.1117/12.426931
Poster Session
Proc. SPIE 4293, Optical gain in silicon nanocrystals, 0000 (18 May 2001); doi: 10.1117/12.426932
Detectors and Emmitters
Proc. SPIE 4293, Increased electroluminescence from a two-junction Si n+pn CMOS structure, 0000 (18 May 2001); doi: 10.1117/12.426933
Proc. SPIE 4293, Electroluminescence at Si bandgap energy from metal-oxide-semiconductor tunneling diodes, 0000 (18 May 2001); doi: 10.1117/12.426934
Poster Session
Proc. SPIE 4293, Strong yellow electroluminescence from manganese-silicon-implanted silicon-dioxide layers, 0000 (18 May 2001); doi: 10.1117/12.426935
Proc. SPIE 4293, Peculiarities of heterostructures made on the base of porous silicon and their physical properties, 0000 (18 May 2001); doi: 10.1117/12.426936
Proc. SPIE 4293, Theoretical and experimental analysis of transmission and enhanced absorption of frequency-selective surfaces in the infrared, 0000 (18 May 2001); doi: 10.1117/12.426937
Back to Top