PROCEEDINGS VOLUME 4340
XVI INTERNATIONAL CONFERENCE ON PHOTOELECTRONICS AND NIGHT VISION DEVICES | 25-27 MAY 2000
16th International Conference on Photoelectronics and Night Vision Devices
XVI INTERNATIONAL CONFERENCE ON PHOTOELECTRONICS AND NIGHT VISION DEVICES
25-27 May 2000
Moscow, Russian Federation
Focal Plane Arrays
Proc. SPIE 4340, Dual-band infrared focal plane arrays, 0000 (28 November 2000); doi: 10.1117/12.407710
Proc. SPIE 4340, IR photodetector arrays based on HgCdTe films and GaAs/AlGaAs multiquantum wells, 0000 (28 November 2000); doi: 10.1117/12.407721
Proc. SPIE 4340, 384 X 288 HgCdTe staring focal plane array, 0000 (28 November 2000); doi: 10.1117/12.407732
Proc. SPIE 4340, 128 X 128 IR FPA based on GaAs/AlGaAs MQW, 0000 (28 November 2000); doi: 10.1117/12.407743
Proc. SPIE 4340, IR detector performance in an area array, 0000 (28 November 2000); doi: 10.1117/12.407754
Proc. SPIE 4340, 128 X 128 FPAs on MBE-grown CdHgTe layers for medium- and far-IR range, 0000 (28 November 2000); doi: 10.1117/12.407757
Proc. SPIE 4340, Design and operation features of high-sensitivity Schottky-barrier CCD arrays in IR cameras, 0000 (28 November 2000); doi: 10.1117/12.407758
Proc. SPIE 4340, Development of 65 X 1 uncooled membrane-type microbolometer array, 0000 (28 November 2000); doi: 10.1117/12.407759
Proc. SPIE 4340, Software for simulation of image conversion in IR TDI systems and optimizing TDI focal plane arrays, 0000 (28 November 2000); doi: 10.1117/12.407760
Photodetectors
Proc. SPIE 4340, LWIR heterodyne HgCdTe detectors, 0000 (28 November 2000); doi: 10.1117/12.407711
Proc. SPIE 4340, Long-wavelength photodiodes for fiber data link, remote control, and instrumentation applications, 0000 (28 November 2000); doi: 10.1117/12.407712
Proc. SPIE 4340, Ultraviolet photodetectors based on GaN and AlxGa1-xN epitaxial layers, 0000 (28 November 2000); doi: 10.1117/12.407713
Proc. SPIE 4340, Analytical calculation of dark voltage-current characteristics of double-layer heterojunction photodiode, 0000 (28 November 2000); doi: 10.1117/12.407714
Proc. SPIE 4340, Metastable behavior of current-voltage characteristics in Hg1-xCdxTe p-n junctions, 0000 (28 November 2000); doi: 10.1117/12.407715
Proc. SPIE 4340, Photodetectors of IR radiation on the basis of CdS1-xSex films deposited from solution, 0000 (28 November 2000); doi: 10.1117/12.407716
Proc. SPIE 4340, Photoconductivity of Cd1-xZnxSe films in IR region deposited from solution, 0000 (28 November 2000); doi: 10.1117/12.407717
Proc. SPIE 4340, Perspective photoreceivers for visible and near-infrared region of spectrum, 0000 (28 November 2000); doi: 10.1117/12.407718
Proc. SPIE 4340, Photoreceivers of IR radiation on the basis of CdSe:Cu films deposited from solutions, 0000 (28 November 2000); doi: 10.1117/12.407719
Night Vision Systems
Proc. SPIE 4340, Rising perspectives of the threshold characteristics of night vision devices, 0000 (28 November 2000); doi: 10.1117/12.407720
Proc. SPIE 4340, Multichannel infrared imager, 0000 (28 November 2000); doi: 10.1117/12.407722
Proc. SPIE 4340, Analytical research of the process radiation flux registration in the MCP-image intensifier tube, 0000 (28 November 2000); doi: 10.1117/12.407723
Proc. SPIE 4340, Adequacy of modeling the environment in the interest of developing night vision devices, 0000 (28 November 2000); doi: 10.1117/12.407724
Proc. SPIE 4340, Instruments of night vision sensitive to a scatter of points of observed objects in the depth of the mapped scene, 0000 (28 November 2000); doi: 10.1117/12.407725
Proc. SPIE 4340, Infrared dual-magnification telescope using diffraction optics, 0000 (28 November 2000); doi: 10.1117/12.407726
Photoelectric Phenomena in Photodetectors
Proc. SPIE 4340, Femtosecond photoelectronics, 0000 (28 November 2000); doi: 10.1117/12.407727
Proc. SPIE 4340, Suppression of the impact ionization by secondary carriers in avalanche photosensitive MIS-like structures, 0000 (28 November 2000); doi: 10.1117/12.407728
Proc. SPIE 4340, Dark current blocking in semiconductors with one type conduction, 0000 (28 November 2000); doi: 10.1117/12.407729
Proc. SPIE 4340, Photoelectric properties of polycrystal Pb1-x-yGexSnyTe:In thin films grown with modified hot wall method, 0000 (28 November 2000); doi: 10.1117/12.407730
Proc. SPIE 4340, Impact of the photoinduced space charge upon semiconductor photoresponse dependence on the concentration of recombination centers under weak optical radiation, 0000 (28 November 2000); doi: 10.1117/12.407731
Proc. SPIE 4340, Optical properties of Pb1-xSnxSe<In> epitaxial films, 0000 (28 November 2000); doi: 10.1117/12.407733
Proc. SPIE 4340, Methods of determining the deep defect concentration, 0000 (28 November 2000); doi: 10.1117/12.407734
Problems in the Technology of Photoelectronic Materials and Structures
Proc. SPIE 4340, Conditions of liquid phase epitaxy of CdxHg1-xTe solid solutions for focal plane IR arrays, 0000 (28 November 2000); doi: 10.1117/12.407735
Proc. SPIE 4340, MCT heterostructure design and growth by MBE for IR devices, 0000 (28 November 2000); doi: 10.1117/12.407736
Proc. SPIE 4340, Mercury cadmium telluride: main semiconductor material of modern IR photoelectronics, 0000 (28 November 2000); doi: 10.1117/12.407737
Proc. SPIE 4340, Fabrication details of GaInAsSb-based photodiode heterostructures, 0000 (28 November 2000); doi: 10.1117/12.407738
Proc. SPIE 4340, Material aspects of OEIC development based on A2B6 compounds on silicone and sapphire, 0000 (28 November 2000); doi: 10.1117/12.407739
Proc. SPIE 4340, Structural perfection diagnostics of narrow-gap photosensitive semiconductor junctions by electron diffraction, 0000 (28 November 2000); doi: 10.1117/12.407740
Proc. SPIE 4340, Particulars of the growth of epitaxial films of PbSe1-xTex, 0000 (28 November 2000); doi: 10.1117/12.407741
Proc. SPIE 4340, Comparative analysis of alternative technological approaches to visible-blind semiconductor photodetectors fabrication, 0000 (28 November 2000); doi: 10.1117/12.407742
Requirements for Photodetectors and Their Measurement Characteristics
Proc. SPIE 4340, Requirements of perspective photodetectors for on-board optical-electronic complexes of Earth, atmosphere, and space sounding, 0000 (28 November 2000); doi: 10.1117/12.407744
Proc. SPIE 4340, Analysis of ultimate abilities of ideal thermal imagers at observation of point emitters, 0000 (28 November 2000); doi: 10.1117/12.407745
Proc. SPIE 4340, Influence of spectral characteristics of IR (8-12 mkm) photodetectors on thermovision system parameters, 0000 (28 November 2000); doi: 10.1117/12.407746
Proc. SPIE 4340, Laser-spectroscopic distance meter on the basis of a tunable injection laser and germanium photodiode (lambda=764 nm), 0000 (28 November 2000); doi: 10.1117/12.407747
Proc. SPIE 4340, Geometrical calibration television measuring systems with solid state photodetectors, 0000 (28 November 2000); doi: 10.1117/12.407748
Proc. SPIE 4340, Spatial-light modulators on the base of metal dielectric semiconductor liquid crystal structures, 0000 (28 November 2000); doi: 10.1117/12.407749
Proc. SPIE 4340, Optical features of metallized polyimide films in the IR range, 0000 (28 November 2000); doi: 10.1117/12.407750
Proc. SPIE 4340, Mathematical modeling of thermal modes of multilayer photodetector structures, 0000 (28 November 2000); doi: 10.1117/12.407751
Proc. SPIE 4340, Source of intense beam of ions with low energy, 0000 (28 November 2000); doi: 10.1117/12.407752
Physical Properties of Materials for Thermoelectric Coolers
Proc. SPIE 4340, Surface conductivity and bulk thermoelectric properties of thermoelements on the basis of extruded samples of Bi0.5Sb1.5Te3 and Bi2Te2.7Se0.3 solid solutions, 0000 (28 November 2000); doi: 10.1117/12.407753
Proc. SPIE 4340, Thermoelectric efficiency of the extruded samples of Bi0.5Sb1.5Te3 and Bi2Te2.7Se0.3 solid solutions with different grain size, 0000 (28 November 2000); doi: 10.1117/12.407755
Proc. SPIE 4340, High-temperature magnetothermoelectrical extruded material on the basis of Bi85Sb15 solid solution, 0000 (28 November 2000); doi: 10.1117/12.407756
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