PROCEEDINGS VOLUME 4343
26TH ANNUAL INTERNATIONAL SYMPOSIUM ON MICROLITHOGRAPHY | FEB 25 - MAR 2 2001
Emerging Lithographic Technologies V
Proceedings Volume 4343 is from: Logo
26TH ANNUAL INTERNATIONAL SYMPOSIUM ON MICROLITHOGRAPHY
Feb 25 - Mar 2 2001
Santa Clara, CA, United States
Next-Generation Lithography and Manufacturing
Proc. SPIE 4343, Insertion of EUVL into high-volume manufacturing, 0000 (20 August 2001); doi: 10.1117/12.436631
EUV Lithography
Proc. SPIE 4343, Progress of the EUVL alpha tool, 0000 (20 August 2001); doi: 10.1117/12.436675
Proc. SPIE 4343, Multilayer optics for an extreme-ultraviolet lithography tool with 70-nm resolution, 0000 (20 August 2001); doi: 10.1117/12.436695
Proc. SPIE 4343, Feasibility study of EUV scanners, 0000 (20 August 2001); doi: 10.1117/12.436704
Projection Electron Lithography
Proc. SPIE 4343, Nikon EB Stepper: the latest development status, 0000 (20 August 2001); doi: 10.1117/12.436632
Proc. SPIE 4343, New data postprocessing for e-beam projection lithography, 0000 (20 August 2001); doi: 10.1117/12.436638
Proc. SPIE 4343, Bremsstrahlung emission and absorption in electron projection lithography, 0000 (20 August 2001); doi: 10.1117/12.436640
Proc. SPIE 4343, Impact of positive ions and effect of lens aberrations in projection electron-beam systems, 0000 (20 August 2001); doi: 10.1117/12.436641
SCALPEL
Proc. SPIE 4343, Progress on the realization of the electron column modules for SCALPEL high-throughput/alpha electron projection lithography tools, 0000 (20 August 2001); doi: 10.1117/12.436642
Proc. SPIE 4343, CD control analysis of the SCALPEL-HT/alpha optics, 0000 (20 August 2001); doi: 10.1117/12.436643
Proc. SPIE 4343, Simulations of a SCALPEL wafer-heating correction using an adaptive Kalman filter, 0000 (20 August 2001); doi: 10.1117/12.436644
X-ray Lithography
Proc. SPIE 4343, Overlay and critical dimension control in 100-nm ULSI processes using TaBN x-ray masks and the XRA x-ray stepper, 0000 (20 August 2001); doi: 10.1117/12.436645
Proc. SPIE 4343, Production x-ray lithography stepper for 100-nm device fabrication, 0000 (20 August 2001); doi: 10.1117/12.436646
Proc. SPIE 4343, Deep x-ray lithography with the SU-8 resist, 0000 (20 August 2001); doi: 10.1117/12.436647
Poster Session
Proc. SPIE 4343, Vacuum spark point source for x-ray/EUV lithography, 0000 (20 August 2001); doi: 10.1117/12.436649
EUV Sources I
Proc. SPIE 4343, Comparison of different source concepts for EUVL, 0000 (20 August 2001); doi: 10.1117/12.436650
Proc. SPIE 4343, Extreme-ultraviolet sources for lithography applications, 0000 (20 August 2001); doi: 10.1117/12.436651
Proc. SPIE 4343, Development of a high-average-power extreme-ultraviolet electric capillary discharge source, 0000 (20 August 2001); doi: 10.1117/12.436652
Proc. SPIE 4343, Progress toward use of a dense plamsa focus as a light source for production EUV lithography, 0000 (20 August 2001); doi: 10.1117/12.436653
Proc. SPIE 4343, Laser-produced plasma (LPP) scale-up and commercialization, 0000 (20 August 2001); doi: 10.1117/12.436654
Next-Generation Resists
Proc. SPIE 4343, Multiple-anion nonvolatile acetal (MANA) resists, 0000 (20 August 2001); doi: 10.1117/12.436655
Proc. SPIE 4343, High-performance e-beam resist coupling excellent dry etch resistance and sub-100-nm resolution for advanced mask and device making, 0000 (20 August 2001); doi: 10.1117/12.436656
Proc. SPIE 4343, Theoretical calculations of photoabsorption of polymers in the EUV (extreme ultraviolet) region, 0000 (20 August 2001); doi: 10.1117/12.436657
Proc. SPIE 4343, Vacuum delay effect of CAR in mask fabrication, 0000 (20 August 2001); doi: 10.1117/12.436658
Proc. SPIE 4343, Fabrication of patterned-surface reactivity templates using physisorption of reactive species in solvent-imprinted nanocavities, 0000 (20 August 2001); doi: 10.1117/12.436659
Nanofabrication
Proc. SPIE 4343, Advances in graft polymerization lithography, 0000 (20 August 2001); doi: 10.1117/12.436660
Proc. SPIE 4343, Nanoimprint lithography with a commercial 4-in. bond system for hot embossing, 0000 (20 August 2001); doi: 10.1117/12.436661
Proc. SPIE 4343, Layer-to-layer alignment for step and flash imprint lithography, 0000 (20 August 2001); doi: 10.1117/12.436662
Proc. SPIE 4343, High-resolution proximity printing by wave-optically designed masks, 0000 (20 August 2001); doi: 10.1117/12.436663
Masks
Proc. SPIE 4343, Evaluation and comparison of the pattern-transfer-induced image placement distortions on e-beam projection lithography masks, 0000 (20 August 2001); doi: 10.1117/12.436664
Proc. SPIE 4343, Impact of the EUV mask phase response on the asymmetry of Bossung curves as predicted by rigorous EUV mask simulations, 0000 (20 August 2001); doi: 10.1117/12.436666
Proc. SPIE 4343, Infinitely selective repair buffer for EUVL reticles, 0000 (20 August 2001); doi: 10.1117/12.436667
Proc. SPIE 4343, TaN EUVL mask fabrication and characterization, 0000 (20 August 2001); doi: 10.1117/12.436668
E-beam Lithography
Proc. SPIE 4343, Essential reduction of stitching errors in electron-beam lithography using a multiple-exposure technique, 0000 (20 August 2001); doi: 10.1117/12.436669
Proc. SPIE 4343, Application of advanced 100-kV EB writer EB-X3 for 100-nm node x-ray mask fabrication, 0000 (20 August 2001); doi: 10.1117/12.436670
Proc. SPIE 4343, New registration technique using voltage-contrast images for low-energy electron-beam lithography, 0000 (20 August 2001); doi: 10.1117/12.436671
Lithography with Ions
Proc. SPIE 4343, Ion projection lithography: advances with integrated tool and resist processes, 0000 (20 August 2001); doi: 10.1117/12.436672
Proc. SPIE 4343, Progress in placement control for ion beam stencil mask technology, 0000 (20 August 2001); doi: 10.1117/12.436673
Proc. SPIE 4343, Micromachining using a focused MeV proton beam for the production of high-precision 3D microstructures with vertical sidewalls of high orthogonality, 0000 (20 August 2001); doi: 10.1117/12.436674
E-beam Lithography
Proc. SPIE 4343, First environmental data from the EUV engineering test stand, 0000 (20 August 2001); doi: 10.1117/12.436676
Proc. SPIE 4343, Use of molecular oxygen to reduce EUV-induced carbon contamination of optics, 0000 (20 August 2001); doi: 10.1117/12.436677
Poster Session
Proc. SPIE 4343, Development of data conversion system for electron-beam projection lithography (EPL) mask, 0000 (20 August 2001); doi: 10.1117/12.436678
Proc. SPIE 4343, High-accuracy aerial image measurement for electron-beam projection lithography, 0000 (20 August 2001); doi: 10.1117/12.436679
X-ray Lithography
Proc. SPIE 4343, Characterization of a laser-produced x-ray source with a double-stream gas puff target for x-ray and EUV lithography, 0000 (20 August 2001); doi: 10.1117/12.436680
Poster Session
Proc. SPIE 4343, Thick silicon membranes as mask blank for SU-8 x-ray deep lithography, 0000 (20 August 2001); doi: 10.1117/12.436681
Proc. SPIE 4343, EUV absorption in a laser-produced plasma source, 0000 (20 August 2001); doi: 10.1117/12.436682
Proc. SPIE 4343, Thermomechanical modeling of the EUV reticle during exposure, 0000 (20 August 2001); doi: 10.1117/12.436683
Proc. SPIE 4343, Quantifying EUV imaging tolerances for the 70-, 50-, 35-nm modes through rigorous aerial image simulations, 0000 (20 August 2001); doi: 10.1117/12.436684
Proc. SPIE 4343, Scaling-up a liquid water jet laser plasma source to high average power for extreme-ultraviolet lithography, 0000 (20 August 2001); doi: 10.1117/12.436685
Proc. SPIE 4343, Advanced point diffraction interferometer for EUV aspherical mirrors, 0000 (20 August 2001); doi: 10.1117/12.436686
Proc. SPIE 4343, Models for characterizing the printability of buried EUV defects, 0000 (20 August 2001); doi: 10.1117/12.436687
Proc. SPIE 4343, Laser-induced EUV source for optics characterization, 0000 (20 August 2001); doi: 10.1117/12.436688
Proc. SPIE 4343, Spectroscopic and energetic investigation of capillary discharges devoted to EUV production for new lithography generation, 0000 (20 August 2001); doi: 10.1117/12.436689
EUV Sources II/EUV Defect Control
Proc. SPIE 4343, Extremely fine-pitch printing with a 10X Schwarzschild optic at extreme-ultraviolet wavelengths, 0000 (20 August 2001); doi: 10.1117/12.436690