PROCEEDINGS VOLUME 4344
26TH ANNUAL INTERNATIONAL SYMPOSIUM ON MICROLITHOGRAPHY | 25 FEBRUARY - 2 MARCH 2001
Metrology, Inspection, and Process Control for Microlithography XV
IN THIS VOLUME

0 Sessions, 90 Papers, 0 Presentations
Defects I  (2)
Defects II  (2)
Overlay I  (6)
Standards  (3)
Overlay II  (4)
Modeling  (1)
CD Control I  (7)
Proceedings Volume 4344 is from: Logo
26TH ANNUAL INTERNATIONAL SYMPOSIUM ON MICROLITHOGRAPHY
25 February - 2 March 2001
Santa Clara, CA, United States
Invited Session
Proc. SPIE 4344, From compliance to control: off-roadmap metrology for low-k1 lithography, 0000 (22 August 2001); doi: 10.1117/12.436719
Defects I
Proc. SPIE 4344, Open-contact failure detection of via holes by using voltage contrast, 0000 (22 August 2001); doi: 10.1117/12.436736
Proc. SPIE 4344, Method for prevention of unopened contact hole in dual-damascene process, 0000 (22 August 2001); doi: 10.1117/12.436747
Defects II
Proc. SPIE 4344, Inspectability study of advanced photomasks with OPC structures, 0000 (22 August 2001); doi: 10.1117/12.436799
AFM Metrology
Proc. SPIE 4344, High-precision metrology by means of a novel stereo imaging technique based on atomic force microscopy, 0000 (22 August 2001); doi: 10.1117/12.436720
Proc. SPIE 4344, Electric force microscopy with a single carbon nanotube tip, 0000 (22 August 2001); doi: 10.1117/12.436728
Proc. SPIE 4344, Automated search method for AFM and profilers, 0000 (22 August 2001); doi: 10.1117/12.436729
Overlay I
Proc. SPIE 4344, W-CMP alignment using ASML's ATHENA system on an I-line stepper, 0000 (22 August 2001); doi: 10.1117/12.436730
Proc. SPIE 4344, Chemical mechanical planarization process induced within lot overlay variation in 0.20-um DRAM: solution and simulation model, 0000 (22 August 2001); doi: 10.1117/12.436731
Proc. SPIE 4344, Evaluation of overlay measurement target designs for Cu dual-damascene process, 0000 (22 August 2001); doi: 10.1117/12.436732
Proc. SPIE 4344, Evaluation of overlay performance by using air shower at the prealignment, 0000 (22 August 2001); doi: 10.1117/12.436733
Proc. SPIE 4344, Advances in process overlay, 0000 (22 August 2001); doi: 10.1117/12.436734
Proc. SPIE 4344, Comprehensive analysis of statistical and model-based overlay lot disposition methods, 0000 (22 August 2001); doi: 10.1117/12.436735
Standards
Proc. SPIE 4344, Problem with submicrometer-linewidth standards and a proposed solution, 0000 (22 August 2001); doi: 10.1117/12.436737
Proc. SPIE 4344, Edge determination for polycrystalline silicon lines on gate oxide, 0000 (22 August 2001); doi: 10.1117/12.436738
Proc. SPIE 4344, Silicon single atom steps as AFM height standards, 0000 (22 August 2001); doi: 10.1117/12.436739
CD Control: Mask
Proc. SPIE 4344, Application of critical shape analyses to two-dimensional patterns, 0000 (22 August 2001); doi: 10.1117/12.436740
Proc. SPIE 4344, Impact and characterization of mask repair on wafer CD uniformity, 0000 (22 August 2001); doi: 10.1117/12.436741
Proc. SPIE 4344, SPM characterizaton of anomalies in phase-shift mask and their effect on wafer features, 0000 (22 August 2001); doi: 10.1117/12.436742
Proc. SPIE 4344, Characterization of optical proximity correction features, 0000 (22 August 2001); doi: 10.1117/12.436743
Proc. SPIE 4344, Atomic force metrology and 3D modeling of microtrenching in etched photomask features, 0000 (22 August 2001); doi: 10.1117/12.436744
Overlay II
Proc. SPIE 4344, Light-diffraction-based overlay measurement, 0000 (22 August 2001); doi: 10.1117/12.436745
Proc. SPIE 4344, Optimization of segmented alignment marks for advanced semidonductor fabrication processes, 0000 (22 August 2001); doi: 10.1117/12.436746
Proc. SPIE 4344, Sampling strategy and model to measure and compensate overlay errors, 0000 (22 August 2001); doi: 10.1117/12.436748
Proc. SPIE 4344, Automated method for overlay sample plan optimization based on spatial variation modeling, 0000 (22 August 2001); doi: 10.1117/12.436749
Modeling
Proc. SPIE 4344, Three-dimensional simulation of SEM imaging and charging, 0000 (22 August 2001); doi: 10.1117/12.436750
Poster Session
Proc. SPIE 4344, Monte Carlo model of charging in resists in e-beam lithography, 0000 (22 August 2001); doi: 10.1117/12.436751
CD Control I
Proc. SPIE 4344, Wafer edge dies yield improvements, 0000 (22 August 2001); doi: 10.1117/12.436752
Proc. SPIE 4344, Improvement in E2 nozzle performance: no imprint and less contamination, 0000 (22 August 2001); doi: 10.1117/12.436753
Scatterometry
Proc. SPIE 4344, Gauge control for sub-170-nm DRAM product features, 0000 (22 August 2001); doi: 10.1117/12.436754
CD Control I
Proc. SPIE 4344, Control of resist flow process for sub-0.15-um small contact hole by latent image, 0000 (22 August 2001); doi: 10.1117/12.436755
Proc. SPIE 4344, Mechanism of deep-UV photoresist tail on inorganic antireflective layer film, 0000 (22 August 2001); doi: 10.1117/12.436756
Proc. SPIE 4344, Advanced statistical process control: controlling sub-0.18um lithography and other processes, 0000 (22 August 2001); doi: 10.1117/12.436757
Proc. SPIE 4344, Evaluation of the dual-exposure technique, 0000 (22 August 2001); doi: 10.1117/12.436758
CD Control II
Proc. SPIE 4344, Investigation of full-field CD control of sub-100-nm gate features by phase-shift 248-nm lithography, 0000 (22 August 2001); doi: 10.1117/12.436759
Proc. SPIE 4344, Practical monitor and control of SEM astigmatism in manufacturing, 0000 (22 August 2001); doi: 10.1117/12.436760
Beyond CD: Feature Shape and Metrology for Process Control
Proc. SPIE 4344, Determination of best focus and exposure dose using CD-SEM sidewall imaging, 0000 (22 August 2001); doi: 10.1117/12.436761
Proc. SPIE 4344, Three-dimensional top-down metrology: a viable alternative to AFM or cross-section?, 0000 (22 August 2001); doi: 10.1117/12.436762
Proc. SPIE 4344, Metrology and analysis of two-dimensional SEM patterns, 0000 (22 August 2001); doi: 10.1117/12.436763
Proc. SPIE 4344, Monitoring printing fidelity with image correlation measurements on the CD SEM, 0000 (22 August 2001); doi: 10.1117/12.436764
New Technologies
Proc. SPIE 4344, Initial results with a point projection microscope, 0000 (22 August 2001); doi: 10.1117/12.436765
Proc. SPIE 4344, High-accuracy EUV metrology of PTB using synchrotron radiation, 0000 (22 August 2001); doi: 10.1117/12.436766
Proc. SPIE 4344, Feature-shape and line-edge roughness measurement of deep submicron lithographic structures using small-angle neutron scattering, 0000 (22 August 2001); doi: 10.1117/12.436767
Proc. SPIE 4344, DualBeam metrology: a new technique for optimizing 0.13-um photo processes, 0000 (22 August 2001); doi: 10.1117/12.436768
Scatterometry
Proc. SPIE 4344, Asymmetric line profile measurement using angular scatterometry, 0000 (22 August 2001); doi: 10.1117/12.436769
Proc. SPIE 4344, Measurement precision of optical scatterometry, 0000 (22 August 2001); doi: 10.1117/12.436770
Proc. SPIE 4344, Implementation of spectroscopic critical dimension (SCD) (TM) for gate CD control and stepper characterization, 0000 (22 August 2001); doi: 10.1117/12.436771
Proc. SPIE 4344, Scatterometry: a metrology for subwavelength surface-relief gratings, 0000 (22 August 2001); doi: 10.1117/12.436772
Proc. SPIE 4344, Electromagnetic scatterometry applied to in-situ metrology, 0000 (22 August 2001); doi: 10.1117/12.436773
300-mm production
Proc. SPIE 4344, Microeconomics of 300-mm process module control, 0000 (22 August 2001); doi: 10.1117/12.436774
Late Breaking News
Proc. SPIE 4344, Haidinger interferometer for silicon wafer TTV measurement, 0000 (22 August 2001); doi: 10.1117/12.436775
Proc. SPIE 4344, High-speed mapping of intertransistor overlay variations using active electrical metrology, 0000 (22 August 2001); doi: 10.1117/12.436776
Proc. SPIE 4344, Comparison of edge detection methods using a prototype overlay calibration artifact, 0000 (22 August 2001); doi: 10.1117/12.436777
Poster Session
Proc. SPIE 4344, Scanning probe position encoder (SPPE): a new approach for high-precision and high-speed position measurement system, 0000 (22 August 2001); doi: 10.1117/12.436778
Proc. SPIE 4344, Process development and impurities analysis for the bottom antireflective coating material, 0000 (22 August 2001); doi: 10.1117/12.436779
Proc. SPIE 4344, Improving the measurement algorithm for alignment, 0000 (22 August 2001); doi: 10.1117/12.436780