PROCEEDINGS VOLUME 4346
26TH ANNUAL INTERNATIONAL SYMPOSIUM ON MICROLITHOGRAPHY | 25 FEBRUARY - 2 MARCH 2001
Optical Microlithography XIV
Proceedings Volume 4346 is from: Logo
26TH ANNUAL INTERNATIONAL SYMPOSIUM ON MICROLITHOGRAPHY
25 February - 2 March 2001
Santa Clara, CA, United States
Lens Aberrations
Proc. SPIE 4346, Optimal lens assignment through measured aberrations, 0000 (14 September 2001); doi: 10.1117/12.435630
Proc. SPIE 4346, Aberration measurement using in-situ two-beam interferometry, 0000 (14 September 2001); doi: 10.1117/12.435717
Proc. SPIE 4346, New phase-shift gratings for measuring aberrations, 0000 (14 September 2001); doi: 10.1117/12.435738
Proc. SPIE 4346, Ring test aberration determination and device lithography correlation, 0000 (14 September 2001); doi: 10.1117/12.435749
157-nm Lithography
Proc. SPIE 4346, Marathon evaluation of optical materials for 157-nm lithography, 0000 (14 September 2001); doi: 10.1117/12.435759
Proc. SPIE 4346, 157-nm photomask handling and infrastructure: requirements and feasibility, 0000 (14 September 2001); doi: 10.1117/12.435770
Novel RET Approaches and Issues
Proc. SPIE 4346, Exposure latitude requirements for high yield with photon flux-limited laser sources, 0000 (14 September 2001); doi: 10.1117/12.435780
157-nm Lithography
Proc. SPIE 4346, SVG 157-nm lithography technical review, 0000 (14 September 2001); doi: 10.1117/12.435789
Proc. SPIE 4346, Current status of Nikon's F2 exposure tool development, 0000 (14 September 2001); doi: 10.1117/12.435631
Advances in OPC
Proc. SPIE 4346, Correction for etch proximity: new models and applications, 0000 (14 September 2001); doi: 10.1117/12.435649
Proc. SPIE 4346, Process dependencies of optical proximity corrections, 0000 (14 September 2001); doi: 10.1117/12.435660
Proc. SPIE 4346, Model-based OPC for first-generation 193-nm lithography, 0000 (14 September 2001); doi: 10.1117/12.435670
Proc. SPIE 4346, Mask considerations for manufacturing assist features, 0000 (14 September 2001); doi: 10.1117/12.435681
Proc. SPIE 4346, Optimizing style options for subresolution assist features, 0000 (14 September 2001); doi: 10.1117/12.435690
Options for the 100-nm node
Proc. SPIE 4346, Can DUV take us below 100 nm?, 0000 (14 September 2001); doi: 10.1117/12.435706
Proc. SPIE 4346, ArF lithography for printing 100-nm gates on low-volume ASIC devices: CD budget issues related to various binary mask-making processes, 0000 (14 September 2001); doi: 10.1117/12.435715
Proc. SPIE 4346, ArF lithography options for 100-nm technologies, 0000 (14 September 2001); doi: 10.1117/12.435718
Lithography for DRAM
Proc. SPIE 4346, Lithography process design for 4-Gb DRAM of 0.31 K1 with KrF, 0000 (14 September 2001); doi: 10.1117/12.435720
Proc. SPIE 4346, Feasibility study of printing sub-100-nm with ArF lithography, 0000 (14 September 2001); doi: 10.1117/12.435721
Proc. SPIE 4346, DRAM lithographic scaling in the sub-130-nm regime, 0000 (14 September 2001); doi: 10.1117/12.435722
Proc. SPIE 4346, Printing 130-nm DRAM isolation pattern: Zernike correlation and tool improvement, 0000 (14 September 2001); doi: 10.1117/12.435723
Proc. SPIE 4346, Application of full-chip level optical proximity correction to memory device with sub-0.10-um design rule and ArF lithography, 0000 (14 September 2001); doi: 10.1117/12.435724
Process Optimization and Control
Proc. SPIE 4346, The MEEF shall inherit the Earth, 0000 (14 September 2001); doi: 10.1117/12.435725
Poster Session
Proc. SPIE 4346, High-NA swing curve effects, 0000 (14 September 2001); doi: 10.1117/12.435726
Process Optimization and Control
Proc. SPIE 4346, Novel multiple resist patterning stacks for dual-damascene interconnection and resolution-enhanced patterns, 0000 (14 September 2001); doi: 10.1117/12.435727
Proc. SPIE 4346, Trench pattern lithography for 0.13- and 0.10-um logic devices at 248-nm and 193-nm wavelengths, 0000 (14 September 2001); doi: 10.1117/12.435728
Proc. SPIE 4346, CD control of low-k-factor step-and-scan lithography, 0000 (14 September 2001); doi: 10.1117/12.435729
Proc. SPIE 4346, Statistical method for influence of exposure and focus error on CD variation, 0000 (14 September 2001); doi: 10.1117/12.435730
Simulation
Proc. SPIE 4346, ArF imaging modeling by using resist simulation and pattern matching, 0000 (14 September 2001); doi: 10.1117/12.435731
Proc. SPIE 4346, Impact of acid/quencher behavior on lithography performance, 0000 (14 September 2001); doi: 10.1117/12.435732
Proc. SPIE 4346, Simplified models for edge transitions in rigorous mask modeling, 0000 (14 September 2001); doi: 10.1117/12.435733
Proc. SPIE 4346, Topography effects and wave aberrations in advanced PSM technology, 0000 (14 September 2001); doi: 10.1117/12.435734
Proc. SPIE 4346, Application of 3D EMF simulation for development and optimization of alternating phase-shifting masks, 0000 (14 September 2001); doi: 10.1117/12.435735
Proc. SPIE 4346, CD control for two-dimensional features in future technology nodes, 0000 (14 September 2001); doi: 10.1117/12.435736
System Characterization
Proc. SPIE 4346, Measurement of transmittance variation of projection lenses depending on the light paths using a grating-pinhole mask, 0000 (14 September 2001); doi: 10.1117/12.435737
Proc. SPIE 4346, Reduction of dose effects due to the transient absorption in fused silica at 193 nm, 0000 (14 September 2001); doi: 10.1117/12.435739
Lens Aberrations
Proc. SPIE 4346, Behavior of lens aberrations as a function of wavelength on KrF and ArF lithography scanners, 0000 (14 September 2001); doi: 10.1117/12.435740
System Characterization
Proc. SPIE 4346, Method to predict CD variation caused by dynamic scanning focus errors, 0000 (14 September 2001); doi: 10.1117/12.435741
Alternating PSM Implementation
Proc. SPIE 4346, Alternating phase-shifting mask with reduced aberration sensitivity: lithography considerations, 0000 (14 September 2001); doi: 10.1117/12.435742
Proc. SPIE 4346, Evaluation of 3D alternating PSM structures using mask topography simulation, and AIMS at lambda=193nm, 0000 (14 September 2001); doi: 10.1117/12.435743
Proc. SPIE 4346, Patterning 0.1-um device by using hybrid PSM, 0000 (14 September 2001); doi: 10.1117/12.435744
Proc. SPIE 4346, Patterning 80-nm gates using 248-nm lithography: an approach for 0.13-um VLSI manufacturing, 0000 (14 September 2001); doi: 10.1117/12.435745
Proc. SPIE 4346, Effects of complementary phase-shift imaging on gate CD control, 0000 (14 September 2001); doi: 10.1117/12.435746
Novel RET Approaches and Issues
Proc. SPIE 4346, Mutually optimizing resolution enhancement techniques: illumination, APSM, assist feature OPC, and gray bars, 0000 (14 September 2001); doi: 10.1117/12.435747
Proc. SPIE 4346, Optimum mask and source patterns to print a given shape, 0000 (14 September 2001); doi: 10.1117/12.435748
Proc. SPIE 4346, Innovative imaging of ultrafine line without using any strong RET, 0000 (14 September 2001); doi: 10.1117/12.435750
Proc. SPIE 4346, Binary halftone chromeless PSM technology for quarter-lambda optical lithography, 0000 (14 September 2001); doi: 10.1117/12.435751
Exposure Tool Subsystems
Proc. SPIE 4346, Performance results of a new generation of 300-mm lithography systems, 0000 (14 September 2001); doi: 10.1117/12.435752
Proc. SPIE 4346, New projection lens system for KrF exposure scanning tool, 0000 (14 September 2001); doi: 10.1117/12.435753
Proc. SPIE 4346, Optical design forms for DUV and VUV microlithographic processes, 0000 (14 September 2001); doi: 10.1117/12.435754
Proc. SPIE 4346, High-power 193-nm excimer lasers for DUV lithography, 0000 (14 September 2001); doi: 10.1117/12.435755
Proc. SPIE 4346, Aberration control for advanced step-and-scan systems using pupil plane engineering, 0000 (14 September 2001); doi: 10.1117/12.435756
System Characterization
Proc. SPIE 4346, Aerial image measurement methods for fast aberration set-up and illumination pupil verification, 0000 (14 September 2001); doi: 10.1117/12.435757
ArF Production Equipment
Proc. SPIE 4346, High-numerical-aperture 193-nm exposure tool, 0000 (14 September 2001); doi: 10.1117/12.435758
Proc. SPIE 4346, New scanners for the 100-nm era, 0000 (14 September 2001); doi: 10.1117/12.435760