PROCEEDINGS VOLUME 4355
FIFTH INTERNATIONAL CONFERENCE ON MATERIAL SCIENCE AND MATERIAL PROPERTIES FOR INFRARED OPTOELECTRONICS | 22-24 MAY 2000
Fifth International Conference on Material Science and Material Properties for Infrared Optoelectronics
IN THIS VOLUME

0 Sessions, 46 Papers, 0 Presentations
FIFTH INTERNATIONAL CONFERENCE ON MATERIAL SCIENCE AND MATERIAL PROPERTIES FOR INFRARED OPTOELECTRONICS
22-24 May 2000
Kiev, Ukraine
Device Application
Proc. SPIE 4355, Heterostructure HgCdTe photovoltaic detectors, 0000 (22 February 2001); doi: 10.1117/12.417762
Proc. SPIE 4355, IR photodetector arrays based on HgCdTe films and GaAs/AlGaAs multiquantum wells, 0000 (22 February 2001); doi: 10.1117/12.417773
Proc. SPIE 4355, Hybrid and monolithic infrared detector arrays, 0000 (22 February 2001); doi: 10.1117/12.417784
Proc. SPIE 4355, Photoelectric characteristics of inhomogeneous MIS structures based in Si, HgCdTe, 0000 (22 February 2001); doi: 10.1117/12.417795
Proc. SPIE 4355, High infrared sensitivity of n-PbTe(Ga) thin films, 0000 (22 February 2001); doi: 10.1117/12.417803
Proc. SPIE 4355, Positive persistent photoconductivity in p-type Al0,5Ga0,5As/GaAs/Al0,5Ga0,5As, 0000 (22 February 2001); doi: 10.1117/12.417804
Proc. SPIE 4355, 2X64 linear LWIR arrays based in HgCdTe MBE-grown layers and CCD silicon readouts, 0000 (22 February 2001); doi: 10.1117/12.417805
Proc. SPIE 4355, Barrier height and current passage mechanisms in Schottky diodes based in MnxHg1-xTe, 0000 (22 February 2001); doi: 10.1117/12.417806
Proc. SPIE 4355, Bandgap of (CdTe)m/(Cd1-xMnxTe)n superlattices, 0000 (22 February 2001); doi: 10.1117/12.417807
Proc. SPIE 4355, Photosensitivity of porous-silicon-based heterostructures, 0000 (22 February 2001); doi: 10.1117/12.417763
Proc. SPIE 4355, Negative differential photoconductivity of thin graded-bandgap layers in conditions of carrier extraction effect, 0000 (22 February 2001); doi: 10.1117/12.417764
Proc. SPIE 4355, Mechanical strain and degradation of laser heterostructures, 0000 (22 February 2001); doi: 10.1117/12.417765
Proc. SPIE 4355, Dynamic properties of inhomogeneous heating-induced polar states in noncentrosymmetric crystals, 0000 (22 February 2001); doi: 10.1117/12.417766
Proc. SPIE 4355, Composite SiO<Cu>-based metal-dielectric films for sensitive elements of pyroelectric detectors of radiation, 0000 (22 February 2001); doi: 10.1117/12.417767
Proc. SPIE 4355, Spectral responsivity of HgMnTe photodiodes, 0000 (22 February 2001); doi: 10.1117/12.417768
Proc. SPIE 4355, Photoelectrical properties of Hg1-xCdxTe epitaxial films and photodiodes with composition grading, 0000 (22 February 2001); doi: 10.1117/12.417769
Proc. SPIE 4355, Dark current and noise in In/Zn/p-InAs and In/n-InAs, 0000 (22 February 2001); doi: 10.1117/12.417770
Characterization and Properties
Proc. SPIE 4355, Ferromagnetic and ferroelectric phase transitions in IV-VI semiconductors, 0000 (22 February 2001); doi: 10.1117/12.417771
Proc. SPIE 4355, Polarization properties of the luminescence from silicon nanocrystals, 0000 (22 February 2001); doi: 10.1117/12.417772
Proc. SPIE 4355, Influence of light hole band nonparabolicity on CdHgTe transport properties, 0000 (22 February 2001); doi: 10.1117/12.417774
Proc. SPIE 4355, Photoluminescence in complex microporous-macroporous silicon structures, 0000 (22 February 2001); doi: 10.1117/12.417775
Proc. SPIE 4355, Enhancement of quantum efficiency of narrow-gap semiconductors infrared emission, 0000 (22 February 2001); doi: 10.1117/12.417776
Proc. SPIE 4355, 4-um negative luminescence from p-InAsSbP/n-InAs diodes in the temperature range of 20 to 180 degrees C, 0000 (22 February 2001); doi: 10.1117/12.417777
Proc. SPIE 4355, Surface and oxide narrow-gap semiconductor interface Rutherford backscattering method, 0000 (22 February 2001); doi: 10.1117/12.417778
Proc. SPIE 4355, Electron-positron annihilation in the narrow-gap semiconductor Hg1-xCdxTe, 0000 (22 February 2001); doi: 10.1117/12.417779
Proc. SPIE 4355, Magnetic properties of Pb1-xGexTe alloys doped with ytterbium, 0000 (22 February 2001); doi: 10.1117/12.417780
Proc. SPIE 4355, Temperature dependencies of electrical resistivity and thermoelectric power of SnTe thin films, 0000 (22 February 2001); doi: 10.1117/12.417781
Proc. SPIE 4355, Isotherms of charge carrier mobility in Pb1-xMnxTe alloys, 0000 (22 February 2001); doi: 10.1117/12.417782
Proc. SPIE 4355, Gap deep defect states in narrow-gap semiconductors, 0000 (22 February 2001); doi: 10.1117/12.417783
Proc. SPIE 4355, Controling the properties of bulk Hg1-xCdxTe by laser-induced shock waves, 0000 (22 February 2001); doi: 10.1117/12.417785
Proc. SPIE 4355, Ferromagnetism of structure-disordered surface layers of molybdenum and zinc single crystals, 0000 (22 February 2001); doi: 10.1117/12.417786
Proc. SPIE 4355, Influence of local distortions of crystal lattice on magnetic susceptibility of (InSb)1-x(CdTe)x solid solutions, 0000 (22 February 2001); doi: 10.1117/12.417787
Proc. SPIE 4355, Two series of characteristics of the dislocation photoemission in CdSe and CdTe crystals, 0000 (22 February 2001); doi: 10.1117/12.417788
Proc. SPIE 4355, Dynamic halo scattering in photorefractive crystals, 0000 (22 February 2001); doi: 10.1117/12.417789
Semiconductor Growth Techniques for IR Optoelectronic Devices
Proc. SPIE 4355, MCT heterostructure design and growth by MBE for IR devices, 0000 (22 February 2001); doi: 10.1117/12.417790
Proc. SPIE 4355, Compensation in semi-intrinsic CdTe-based materials, 0000 (22 February 2001); doi: 10.1117/12.417791
Proc. SPIE 4355, Chemical dissolution of III-V and II-VI semiconductor compounds in solutions of HNO3-HCl-lactic acid system, 0000 (22 February 2001); doi: 10.1117/12.417792
Proc. SPIE 4355, CdTe substrate purification from impurities by gettering, 0000 (22 February 2001); doi: 10.1117/12.417793
Proc. SPIE 4355, Use of anisotropic optical thermoelement of inner optical reflection for radiant flow registration in the visible and IR regions of the spectrum, 0000 (22 February 2001); doi: 10.1117/12.417794
Proc. SPIE 4355, Multilayer coatings as the base for cryogenic infrared filters: technology, peculiarities, and possibilities of application, 0000 (22 February 2001); doi: 10.1117/12.417796
Proc. SPIE 4355, Growth and some properties of tellurium compound whiskers, 0000 (22 February 2001); doi: 10.1117/12.417797
Proc. SPIE 4355, MnHgTe epitaxial layers grown by rf sputtering in mercury glow discharge, 0000 (22 February 2001); doi: 10.1117/12.417798
Proc. SPIE 4355, Laser-assisted evaporation and deposition of MnxHg1-xTe epitaxial layers, 0000 (22 February 2001); doi: 10.1117/12.417799
Proc. SPIE 4355, In-situ kinetics study of gas phase formation in the system Ga/In-AsCl3-HCl-H2 by UV spectroscopy, 0000 (22 February 2001); doi: 10.1117/12.417800
Proc. SPIE 4355, Polishing of InSb in K2Cr2O7-HBr-HCl (oxalic acid) solutions, 0000 (22 February 2001); doi: 10.1117/12.417801
Proc. SPIE 4355, Chemical cutting process in narrow-gap semiconductors, 0000 (22 February 2001); doi: 10.1117/12.417802
Back to Top