PROCEEDINGS VOLUME 4404
MICROELECTRONIC AND MEMS TECHNOLOGIES | 30 MAY - 1 JUNE 2001
Lithography for Semiconductor Manufacturing II
MICROELECTRONIC AND MEMS TECHNOLOGIES
30 May - 1 June 2001
Edinburgh, United Kingdom
Lithography Manufacturing Technologies
Proc. SPIE 4404, Lithography aspects of dual-damascene interconnect technology, 0000 (26 April 2001); doi: 10.1117/12.425203
Proc. SPIE 4404, Exposure tool chuck flatness study and effects on lithography, 0000 (26 April 2001); doi: 10.1117/12.425211
Proc. SPIE 4404, Polygate within wafer CD uniformity improvement by the minimization of lens heating effect, 0000 (26 April 2001); doi: 10.1117/12.425219
Proc. SPIE 4404, Analysis of full-wafer/full-batch CD uniformity using electrical linewidth measurements, 0000 (26 April 2001); doi: 10.1117/12.425226
Proc. SPIE 4404, Overlay improvement on 0.15-um production with ASML IOSc (improved overlay scanner) package, 0000 (26 April 2001); doi: 10.1117/12.425234
Proc. SPIE 4404, Front-end-of-line process development using 193-nm lithography, 0000 (26 April 2001); doi: 10.1117/12.425235
Lithography Simulation
Proc. SPIE 4404, Simulation-enabled decision making in advanced lithographic manufacturing, 0000 (26 April 2001); doi: 10.1117/12.425236
Proc. SPIE 4404, Simple method for characterizing photoresist dissolution properties, 0000 (26 April 2001); doi: 10.1117/12.425194
Proc. SPIE 4404, STIL II: photoresist silylation simulation using 2D finite element analysis and boundary movement algorithms, 0000 (26 April 2001); doi: 10.1117/12.425195
Proc. SPIE 4404, Comparison of simulation approaches for chemically amplified resists, 0000 (26 April 2001); doi: 10.1117/12.425196
Proc. SPIE 4404, Toward a universal resist dissolution model for lithography simulation, 0000 (26 April 2001); doi: 10.1117/12.425197
Proc. SPIE 4404, Continuum model of shot noise and line edge roughness, 0000 (26 April 2001); doi: 10.1117/12.425198
Proc. SPIE 4404, New instrument to characterize materials and optics for 157-nm lithography, 0000 (26 April 2001); doi: 10.1117/12.425199
Photomask Technology and Use
Proc. SPIE 4404, Measurement and analysis of reticle and wafer-level contributions to total CD variation, 0000 (26 April 2001); doi: 10.1117/12.425200
Proc. SPIE 4404, Novel analysis technique for examining the effect of exposure conditions on the mask error enhancement factor, 0000 (26 April 2001); doi: 10.1117/12.425201
Proc. SPIE 4404, ArF lithography: challenges, resolution capability, and the mask error enhancement function (MEEF), 0000 (26 April 2001); doi: 10.1117/12.425202
Proc. SPIE 4404, Manufacturing considerations for MEEF minimization and process window optimization for 180-nm contact holes, 0000 (26 April 2001); doi: 10.1117/12.425204
Proc. SPIE 4404, MEEF management and the effect of assist feature optical proximity corrections, 0000 (26 April 2001); doi: 10.1117/12.425205
Proc. SPIE 4404, Critical procedure for OPC software benchmarking with maskshop consideration, 0000 (26 April 2001); doi: 10.1117/12.425206
Lithography for Non-IC Applications
Proc. SPIE 4404, Tools and processes for MEMS and nanotechnology, 0000 (26 April 2001); doi: 10.1117/12.425207
Proc. SPIE 4404, Enhancing the development rate model in optical lithography simulation of ultrathick resist films for applications such as MEMS and LIGA, 0000 (26 April 2001); doi: 10.1117/12.425208
Proc. SPIE 4404, High-resolution proximity printing by wave-optically designed complex transmission masks, 0000 (26 April 2001); doi: 10.1117/12.425209
Proc. SPIE 4404, Fabrication of fluidic manifold systems using single-exposure grayscale masks, 0000 (26 April 2001); doi: 10.1117/12.425210
Proc. SPIE 4404, Combined optical and electron beam lithography for integrated circuit fabrication, 0000 (26 April 2001); doi: 10.1117/12.425212
Photomask Technology and Use
Proc. SPIE 4404, Photolithography on micromachined 3D surfaces using spray coating technology of photoresist, 0000 (26 April 2001); doi: 10.1117/12.425213
Advanced Imaging Technologies
Proc. SPIE 4404, Optical proximity strategies for desensitizing lens aberrations, 0000 (26 April 2001); doi: 10.1117/12.425214
Proc. SPIE 4404, 0.11-um imaging in KrF lithography using dipole illumination, 0000 (26 April 2001); doi: 10.1117/12.425215
Proc. SPIE 4404, Aberration control for 70-nm optical lithography, 0000 (26 April 2001); doi: 10.1117/12.425216
Proc. SPIE 4404, Some lithographic limits of back end lithography, 0000 (26 April 2001); doi: 10.1117/12.425217
Proc. SPIE 4404, Development and investigation of high-quality CaF2 used for 157-nm microlithography, 0000 (26 April 2001); doi: 10.1117/12.425218
Poster Session
Proc. SPIE 4404, Progress of light source technologies from KrF laser to F2 laser, 0000 (26 April 2001); doi: 10.1117/12.425220
Proc. SPIE 4404, Automatic resist parameter calibration procedure for lithography simulation, 0000 (26 April 2001); doi: 10.1117/12.425221
Proc. SPIE 4404, Electron projection lithography: progress on the electron column modules for SCALPEL high-throughput/alpha exposure tools, 0000 (26 April 2001); doi: 10.1117/12.425222
Proc. SPIE 4404, Final inspection of photomask blanks, 0000 (26 April 2001); doi: 10.1117/12.425223
Proc. SPIE 4404, Microstructuring irradiated by 197- and 308-nm excimer laser, 0000 (26 April 2001); doi: 10.1117/12.425224
Proc. SPIE 4404, Investigation of OPC mask distortion effect, 0000 (26 April 2001); doi: 10.1117/12.425225
Proc. SPIE 4404, Sub-0.35-um i-line lithography with new advanced bottom antireflective coatings optimized for high-topography and dual-damascene applications, 0000 (26 April 2001); doi: 10.1117/12.425227
Proc. SPIE 4404, Dose metrology for DUV lithographic tools, 0000 (26 April 2001); doi: 10.1117/12.425228
Proc. SPIE 4404, Modifying the surface inhibition layer of thick resists for improved process control, 0000 (26 April 2001); doi: 10.1117/12.425229
Proc. SPIE 4404, Automatic calibration of lithography simulation parameters, 0000 (26 April 2001); doi: 10.1117/12.425230
Proc. SPIE 4404, Low-temperature 193-nm resist reflow process for 100-nm generation contact patterning, 0000 (26 April 2001); doi: 10.1117/12.425231
Proc. SPIE 4404, Periodic nanostructure fabrication on the semiconductor monocrystalline surface, 0000 (26 April 2001); doi: 10.1117/12.425232
Proc. SPIE 4404, Spatial filtering effects of the attenuated PSM and assist bar OPC, 0000 (26 April 2001); doi: 10.1117/12.425233
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