PROCEEDINGS VOLUME 4405
MICROELECTRONIC AND MEMS TECHNOLOGIES | MAY 30 - JUN 1 2001
Process and Equipment Control in Microelectronic Manufacturing II
IN THIS VOLUME

0 Sessions, 20 Papers, 0 Presentations
MICROELECTRONIC AND MEMS TECHNOLOGIES
May 30 - Jun 1 2001
Edinburgh, United Kingdom
SPC, Modeling, and Defectivity
Proc. SPIE 4405, Use of control rules and stability index to maintain an effective SPC system in a high-volume fab, 0000 (20 April 2001); doi: 10.1117/12.425237
Proc. SPIE 4405, Optimization of a high-voltage process using TCAD, 0000 (20 April 2001); doi: 10.1117/12.425251
Proc. SPIE 4405, Low-yield issue in IDDQ failure caused by the scrubber clean at SOG-CUR process stage, 0000 (20 April 2001); doi: 10.1117/12.425252
Proc. SPIE 4405, Modeling a geographically distributed MEMS fabrication network, 0000 (20 April 2001); doi: 10.1117/12.425253
Control of Process Equipment and Materials
Proc. SPIE 4405, Method of controlling wafer surface polarity to reduce spacer particle contamination, 0000 (20 April 2001); doi: 10.1117/12.425254
Proc. SPIE 4405, Use of cooled CCD cameras to control multicharged ion beam processes, 0000 (20 April 2001); doi: 10.1117/12.425255
Proc. SPIE 4405, Characterization of ultrathin gate dielectrics using combined grazing x-ray reflectance and spectroscopic ellipsometry, 0000 (20 April 2001); doi: 10.1117/12.425256
Proc. SPIE 4405, Spatially programmable thermal processing module for 300-mm wafer processing, 0000 (20 April 2001); doi: 10.1117/12.425238
Proc. SPIE 4405, Structural and acoustic characterization of highly oriented piezoelectric AIN films, 0000 (20 April 2001); doi: 10.1117/12.425239
Proc. SPIE 4405, Method of forming tiny silicon nitride spacer for flash EPROM, 0000 (20 April 2001); doi: 10.1117/12.425240
Proc. SPIE 4405, End-point detection during the realization of deep P+ zones by Al thermomigration, 0000 (20 April 2001); doi: 10.1117/12.425241
Proc. SPIE 4405, In-line total overlay measurement to operate tools beyond their capability, 0000 (20 April 2001); doi: 10.1117/12.425242
Photo and Etch Process Control
Proc. SPIE 4405, Final CD control through slope/sidewall angle correlation with stepper defocus and electrical parametric, 0000 (20 April 2001); doi: 10.1117/12.425243
Proc. SPIE 4405, Stepper lens field critical dimension uniformity and optical proximity correction, 0000 (20 April 2001); doi: 10.1117/12.425244
Proc. SPIE 4405, Etch selectivity of a wet chemical formulation for premetal cleaning, 0000 (20 April 2001); doi: 10.1117/12.425245
Proc. SPIE 4405, 20-um deep trench isolation process characterization for linear bipolar ICs, 0000 (20 April 2001); doi: 10.1117/12.425246
Proc. SPIE 4405, Recharacterization of a tungsten etch back process with special emphasis on PFC emission reduction and throughput optimization, 0000 (20 April 2001); doi: 10.1117/12.425247
Proc. SPIE 4405, Volatile defect formation and polysilicon residue elimination, 0000 (20 April 2001); doi: 10.1117/12.425248
Poster Session
Proc. SPIE 4405, Some measurements on the effects of developer depletion, 0000 (20 April 2001); doi: 10.1117/12.425249
Proc. SPIE 4405, High-pressure treatment and analysis of semiconductor-metal heterophase structures, 0000 (20 April 2001); doi: 10.1117/12.425250
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