PROCEEDINGS VOLUME 4406
MICROELECTRONIC AND MEMS TECHNOLOGIES | MAY 30 - JUN 1 2001
In-Line Characterization, Yield, Reliability, and Failure Analysis in Microelectronic Manufacturing II
MICROELECTRONIC AND MEMS TECHNOLOGIES
May 30 - Jun 1 2001
Edinburgh, United Kingdom
Failure Analysis
Proc. SPIE 4406, Failure analysis concepts for microelectronics technologies and manufacturing of the future, 0000 (23 April 2001); doi: 10.1117/12.425257
Proc. SPIE 4406, Observation of titanium-silicide via backside etching, 0000 (23 April 2001); doi: 10.1117/12.425264
Proc. SPIE 4406, In-line failure analysis on productive wafers with dual-beam SEM/FIB systems, 0000 (23 April 2001); doi: 10.1117/12.425274
Proc. SPIE 4406, Failure analysis of advanced packaging technologies using scanning acoustic microscopy, 0000 (23 April 2001); doi: 10.1117/12.425281
Proc. SPIE 4406, Planarization wrinkle in CIS color filter process, 0000 (23 April 2001); doi: 10.1117/12.425282
In-Line Characterization
Proc. SPIE 4406, In-line and nondestructive analysis of selectively grown epitaxial Si1-xGex and Si/ Si1-xGex layers by spectroscopic ellipsometery and comparison with other established techniques, 0000 (23 April 2001); doi: 10.1117/12.425283
Proc. SPIE 4406, In-line inspection method with AIT-II and ADC, 0000 (23 April 2001); doi: 10.1117/12.425284
Proc. SPIE 4406, In-line monitoring of process-induced damage through chemical contamination in microelectronic manufacturing, 0000 (23 April 2001); doi: 10.1117/12.425285
Failure Analysis in Advanced Packaging
Proc. SPIE 4406, Wire-ball-bonding process evaluatiuon by using focused ion beam bondball characterization, 0000 (23 April 2001); doi: 10.1117/12.425258
Proc. SPIE 4406, Microlaminography for high-resolution BGA and flip-chip inspection, 0000 (23 April 2001); doi: 10.1117/12.425259
Proc. SPIE 4406, Adapted time power profile for laser beam soldering with solder paste, 0000 (23 April 2001); doi: 10.1117/12.425260
Process Control and Optimization
Proc. SPIE 4406, Recent advances in endpoint and in-line monitoring techniques for chemical-mechanical polishing processes, 0000 (23 April 2001); doi: 10.1117/12.425261
Proc. SPIE 4406, Process-induced threshold voltage fluctuations on SOI fully depleted technology, 0000 (23 April 2001); doi: 10.1117/12.425262
Reliability Control and Improvement
Proc. SPIE 4406, Wafer-level stress data successfully used as early burn-in predictor, 0000 (23 April 2001); doi: 10.1117/12.425263
Proc. SPIE 4406, Novel technique for reliability testing of silicon integrated circuits, 0000 (23 April 2001); doi: 10.1117/12.425265
Proc. SPIE 4406, Control and reduction of post-metal etch corrosion effects due to airborne molecular contamination, 0000 (23 April 2001); doi: 10.1117/12.425266
Proc. SPIE 4406, Increasing etch uniformity using in-line endpoint systems on complex spacer technology, 0000 (23 April 2001); doi: 10.1117/12.425267
Poster Session
Proc. SPIE 4406, Methodology of a short-loop yield analysis for defect impact studies, 0000 (23 April 2001); doi: 10.1117/12.425268
Yield Test Structures
Proc. SPIE 4406, Mechanism and annihilation of shallow-trench-isolation-enhanced poly-mask-edge N+/P-well junction leakage, 0000 (23 April 2001); doi: 10.1117/12.425269
Proc. SPIE 4406, Localization of defects using checkerboard test structures, 0000 (23 April 2001); doi: 10.1117/12.425270
Yield Control
Proc. SPIE 4406, In-line reaction based on predictive yield-loss analysis, 0000 (23 April 2001); doi: 10.1117/12.425271
Proc. SPIE 4406, In-line defect to final test bitmap correlations: a Bayesian approach, 0000 (23 April 2001); doi: 10.1117/12.425272
Proc. SPIE 4406, Web-based procedure to speed up reaction to in-line inspection alarms, 0000 (23 April 2001); doi: 10.1117/12.425273
Poster Session
Proc. SPIE 4406, Large polysilicon grain defects in gate deposition due to prior contamination, 0000 (23 April 2001); doi: 10.1117/12.425275
Proc. SPIE 4406, New novel method for solving ASML alignment fail (model error) in color filter process, 0000 (23 April 2001); doi: 10.1117/12.425276
Proc. SPIE 4406, Thermoradiation modification of characteristics of silicon diffusion diodes, 0000 (23 April 2001); doi: 10.1117/12.425277
Proc. SPIE 4406, Photo-induced effects in the glass-ITO system, 0000 (23 April 2001); doi: 10.1117/12.425278
Yield Control
Proc. SPIE 4406, Control of organic contamination in CMOS manufacturing, 0000 (23 April 2001); doi: 10.1117/12.425279
In-Line Characterization
Proc. SPIE 4406, Integrated metrology: an enabler for advanced process control (APC), 0000 (23 April 2001); doi: 10.1117/12.425280
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