PROCEEDINGS VOLUME 4409
PHOTOMASK AND NEXT GENERATION LITHOGRAPHY MASK TECHNOLOGY VIII | 25-27 APRIL 2001
Photomask and Next-Generation Lithography Mask Technology VIII
PHOTOMASK AND NEXT GENERATION LITHOGRAPHY MASK TECHNOLOGY VIII
25-27 April 2001
Kanagawa, Japan
Mask Technology and Semiconductor Devices
Proc. SPIE 4409, Impact of embedded DRAM logic devices on semiconductor manufacturing, 0000 (5 September 2001); doi: 10.1117/12.438339
Photomask Processes and Materials
Proc. SPIE 4409, High-performance e-beam resist coupling excellent dry etch resistance and sub-100-nm resolution for advanced mask making, 0000 (5 September 2001); doi: 10.1117/12.438350
Proc. SPIE 4409, Resolution improvement of chemical-amplification resist using process-induced effect correction, 0000 (5 September 2001); doi: 10.1117/12.438359
Proc. SPIE 4409, Photoresist processing for high-resolution DUV lithography at 257 nm, 0000 (5 September 2001); doi: 10.1117/12.438370
Proc. SPIE 4409, CARs blanks feasibility study results for advanced EB reticle fabrication: III, 0000 (5 September 2001); doi: 10.1117/12.438379
Defect Printability and Dispositioning
Proc. SPIE 4409, Enhanced dispositioning of reticle defects using the Virtual Stepper with automated defect severity scoring, 0000 (5 September 2001); doi: 10.1117/12.438388
Proc. SPIE 4409, Defect printability study with programmed defects on halftone reticles, 0000 (5 September 2001); doi: 10.1117/12.438398
Proc. SPIE 4409, Defect dispositioning using mask printability on attenuated phase-shift production photomasks, 0000 (5 September 2001); doi: 10.1117/12.438407
Proc. SPIE 4409, Mask defect disposition: flux-area measurement of edge, contact, and OPC defects correlates to wafer and enables effective decisions, 0000 (5 September 2001); doi: 10.1117/12.438329
Metrology
Proc. SPIE 4409, Contact holes: optical area measurement predicts printability and is highly repeatable, 0000 (5 September 2001); doi: 10.1117/12.438330
Proc. SPIE 4409, First performance data obtained on next-generation optical mask metrology tools, 0000 (5 September 2001); doi: 10.1117/12.438331
Resolution Enhancement Technology in Optical Lithography
Proc. SPIE 4409, Resolution enhancement techniques in optical lithography: It's not just a mask problem, 0000 (5 September 2001); doi: 10.1117/12.438332
Proc. SPIE 4409, Fabricating 100-nm line patterns with high-transmittance ArF attenuated phase-shift masks, 0000 (5 September 2001); doi: 10.1117/12.438333
PSM Fabrication Processes and Materials
Proc. SPIE 4409, Application of multistep quartz etching method to strong PSMs, 0000 (5 September 2001); doi: 10.1117/12.438334
Resolution Enhancement Technology in Optical Lithography
Proc. SPIE 4409, Optimization of alternating phase-shift mask structure for ArF laser lithography, 0000 (5 September 2001); doi: 10.1117/12.438335
PSM Fabrication Processes and Materials
Proc. SPIE 4409, ZrSiON as a material for high-transmittance attenuated PSM, 0000 (5 September 2001); doi: 10.1117/12.438336
Proc. SPIE 4409, Development of bilayered TaSiOx-HTPSM: I, 0000 (5 September 2001); doi: 10.1117/12.438337
Proc. SPIE 4409, Development of bilayered TaSiOx-HTPSM: II, 0000 (5 September 2001); doi: 10.1117/12.438338
Mask Design Automation and T-CAD
Proc. SPIE 4409, New mask data verification method after optical proximity effect correction, 0000 (5 September 2001); doi: 10.1117/12.438340
PSM Fabrication Processes and Materials
Proc. SPIE 4409, Optimization of fabrication process for dual-trench-type alternating PSM, 0000 (5 September 2001); doi: 10.1117/12.438341
Proc. SPIE 4409, 100-nm alternating PSM structure discussion for ArF lithography, 0000 (5 September 2001); doi: 10.1117/12.438342
Resolution Enhancement Technology in Optical Lithography
Proc. SPIE 4409, Prediction of MEEF using a simple model and MEEF enhancement parameters, 0000 (5 September 2001); doi: 10.1117/12.438343
Proc. SPIE 4409, Quantitative analysis of mask error effect on wafer CD variation in ArF lithography, 0000 (5 September 2001); doi: 10.1117/12.438344
Proc. SPIE 4409, Reticle quality needs for advanced 193-nm lithography, 0000 (5 September 2001); doi: 10.1117/12.438345
Mask Design Automation and T-CAD
Proc. SPIE 4409, Enhanced capability improvement using OPC pattern generation at laser lithography, 0000 (5 September 2001); doi: 10.1117/12.438346
Photomask Processes and Materials
Proc. SPIE 4409, Fabry-Perot-type antireflective coating for deep-ultraviolet binary photomask application, 0000 (5 September 2001); doi: 10.1117/12.438347
Proc. SPIE 4409, Application of chemically amplified resist to 10-keV e-beam system, 0000 (5 September 2001); doi: 10.1117/12.438348
Proc. SPIE 4409, Advantages of using the CAR for photomask manufacturing, 0000 (5 September 2001); doi: 10.1117/12.438349
Proc. SPIE 4409, Acid-breakable-resin-based chemical amplification positive resist for 0.1-um-rule reticle fabrication: design and lithographic performance, 0000 (5 September 2001); doi: 10.1117/12.438351
Proc. SPIE 4409, Elongation effect of a protecting layer for film life of chemically amplified-type e-beam resist, 0000 (5 September 2001); doi: 10.1117/12.438352
Proc. SPIE 4409, Improved baking of photomasks by a dynamically zone-controlled process approach, 0000 (5 September 2001); doi: 10.1117/12.438353
Mask Design Automation and T-CAD
Proc. SPIE 4409, Electron-beam lithography simulation for mask making: VI. Comparison of 10- and 50-kV GHOST proximity effect correction, 0000 (5 September 2001); doi: 10.1117/12.438354
Dry Etching Techniques for Mask Materials
Proc. SPIE 4409, Dry etching of Cr layer and its loading effect, 0000 (5 September 2001); doi: 10.1117/12.438355
Proc. SPIE 4409, Improvement of NLD mask dry etching system, 0000 (5 September 2001); doi: 10.1117/12.438356
Proc. SPIE 4409, Effect of clear field ratio on critical dimension in the dry etching process, 0000 (5 September 2001); doi: 10.1117/12.438357
Proc. SPIE 4409, Development and characterization of a new plasma etching process for mask manufacturing, 0000 (5 September 2001); doi: 10.1117/12.438358
Mask Design Automation and T-CAD
Proc. SPIE 4409, Pattern shape analysis tool for quantitative estimate of photomask and process, 0000 (5 September 2001); doi: 10.1117/12.438360
Defect Printability and Dispositioning
Proc. SPIE 4409, Accuracy of transmittance measurement of inspection machine for semitransparent defect and its detectability, 0000 (5 September 2001); doi: 10.1117/12.438361
Proc. SPIE 4409, Photomask quality control by Virtual Stepper system for subwavelength photomasks, 0000 (5 September 2001); doi: 10.1117/12.438362
Proc. SPIE 4409, Simulation-based defect printability analysis for 0.13-um technology, 0000 (5 September 2001); doi: 10.1117/12.438363
VUV and NGL Masks
Proc. SPIE 4409, Precise x-ray mask writing technology using advanced 100-kV EB writer EB-X3, 0000 (5 September 2001); doi: 10.1117/12.438364
Proc. SPIE 4409, Fabrication of NIST-format x-ray masks with 4-Gb DRAM patterns, 0000 (5 September 2001); doi: 10.1117/12.438365
Proc. SPIE 4409, Evaluation of aperture mask degradation in electron-beam lithography using line edge roughness of resist patterns, 0000 (5 September 2001); doi: 10.1117/12.438366
Proc. SPIE 4409, Performance of Cr mask for extreme-ultraviolet lithography, 0000 (5 September 2001); doi: 10.1117/12.438367
Proc. SPIE 4409, EUV mask cleaning by dry and wet processes, 0000 (5 September 2001); doi: 10.1117/12.438368
Proc. SPIE 4409, Thermal response of EUVL mask substrate during dry etching process, 0000 (5 September 2001); doi: 10.1117/12.438369
Proc. SPIE 4409, Simulation of EUVL mask defect printability, 0000 (5 September 2001); doi: 10.1117/12.438371
Defect Inspection and Repair Systems
Proc. SPIE 4409, LM5000 as a strong mask analyzing tool, 0000 (5 September 2001); doi: 10.1117/12.438372
Proc. SPIE 4409, Advanced FIB mask repair technology for ArF lithography: III, 0000 (5 September 2001); doi: 10.1117/12.438373
Advanced Mask Cleaning, Pellicle, and Process Technology
Proc. SPIE 4409, Mask process design optimization based on quality mapping using standard mask inspection equipment, 0000 (5 September 2001); doi: 10.1117/12.438374
Proc. SPIE 4409, Development of refined cleaning technique focusing on an ecological viewpoint, 0000 (5 September 2001); doi: 10.1117/12.438375
Photmask Patterning
Proc. SPIE 4409, Improvement of photomask repeater for 130-nm lithography, 0000 (5 September 2001); doi: 10.1117/12.438376
Mask Design Automation and T-CAD
Proc. SPIE 4409, Laser proximity correction for advanced mask manufacturing, 0000 (5 September 2001); doi: 10.1117/12.438377
Metrology
Proc. SPIE 4409, CD measurement for next-generation mask, 0000 (5 September 2001); doi: 10.1117/12.438378
Proc. SPIE 4409, New optical metrology for masks: range and accuracy rivals SEM, 0000 (5 September 2001); doi: 10.1117/12.438380
VUV and NGL Masks
Proc. SPIE 4409, Up-to-date activities of PXL (proximity x-ray lithography), 0000 (5 September 2001); doi: 10.1117/12.438381