PROCEEDINGS VOLUME 4412
INTERNATIONAL CONFERENCE ON SOLID STATE CRYSTALS 2000 | 9-13 OCTOBER 2000
International Conference on Solid State Crystals 2000: Growth, Characterization, and Applications of Single Crystals
INTERNATIONAL CONFERENCE ON SOLID STATE CRYSTALS 2000
9-13 October 2000
Zakopane, Poland
Bulk Crystal Growth
Proc. SPIE 4412, Scope of ZnO growth, 0000 (10 August 2001); doi: 10.1117/12.435799
Proc. SPIE 4412, Influence of mechanical stress on the growth of crystals, 0000 (10 August 2001); doi: 10.1117/12.435810
Proc. SPIE 4412, Crystal growth of new functional materials for electro-optical applications, 0000 (10 August 2001); doi: 10.1117/12.435821
Proc. SPIE 4412, Possibilities and limitations of multioxide crystals growth, 0000 (10 August 2001); doi: 10.1117/12.435832
Proc. SPIE 4412, Single-domain HTC superconducting materials synthesis: BaZrO3 substrates as a tool for optimized systems, 0000 (10 August 2001); doi: 10.1117/12.435843
Proc. SPIE 4412, Very high quality crystals of wide-gap II-VI semiconductors: What for?, 0000 (10 August 2001); doi: 10.1117/12.435854
Proc. SPIE 4412, Annealing of GaSb single crystals in ionized hydrogen atmosphere, 0000 (10 August 2001); doi: 10.1117/12.435865
Proc. SPIE 4412, Growth and structure of strontium-doped LaGaO3, 0000 (10 August 2001); doi: 10.1117/12.435870
Proc. SPIE 4412, Al-Cu-Co single quasi-crystals obtained by the method of inclined front crystallization, 0000 (10 August 2001); doi: 10.1117/12.435871
Proc. SPIE 4412, Correlation of Cu and VZn concentration within the diffusion region of ZnSe monocrystals, 0000 (10 August 2001); doi: 10.1117/12.435800
Proc. SPIE 4412, Chromium recharging processes in the Y3Al5O12:Mg,Cr single crystal under the reducing and oxidizing annealing influence, 0000 (10 August 2001); doi: 10.1117/12.435801
Proc. SPIE 4412, Optical properties of doped potassium gadolinium tungstate single crystals, 0000 (10 August 2001); doi: 10.1117/12.435802
Proc. SPIE 4412, Optical properties of some borate single crystals, 0000 (10 August 2001); doi: 10.1117/12.435803
Silicon: Technology and Characterization
Proc. SPIE 4412, Peculiarities of the thermal donor formation in Czochralski-grown silicon under high hydrostatic pressure, 0000 (10 August 2001); doi: 10.1117/12.435804
Proc. SPIE 4412, Effect of silicon microstructure on stress-stimulated creation of thermal donors, 0000 (10 August 2001); doi: 10.1117/12.435805
Proc. SPIE 4412, Effect of high-pressure high-temperature treatment on neutron-irradiation-induced defects in Czochralski silicon, 0000 (10 August 2001); doi: 10.1117/12.435806
Proc. SPIE 4412, Two-dimensional model of the intrinsic point defects behavior during Cz silicon crystal growth, 0000 (10 August 2001); doi: 10.1117/12.435807
Proc. SPIE 4412, Study of material behavior in DAC: system Si-O (SiOx) and compound Fe78Mn20Si2, 0000 (10 August 2001); doi: 10.1117/12.435808
Proc. SPIE 4412, Investigation of system Si-O (SiOx) behavior in DAC at submegabar pressure, 0000 (10 August 2001); doi: 10.1117/12.435809
Proc. SPIE 4412, Investigation of as-grown nitrogen-doped Czochralski silicon, 0000 (10 August 2001); doi: 10.1117/12.435811
Proc. SPIE 4412, Effect of stress on defect transformation in hydrogen-implanted silicon and SOI structures, 0000 (10 August 2001); doi: 10.1117/12.435812
Crystal Physics, Ordering Processes
Proc. SPIE 4412, Molecular simulations of concentrated aqueous solutions: ionic equilibrium structures in solutions, 0000 (10 August 2001); doi: 10.1117/12.435813
Proc. SPIE 4412, Dynamics of diffusion-controlled recombination of ions in ionic solutions: limits of validity of the Debye-Smoluchowski equation, 0000 (10 August 2001); doi: 10.1117/12.435814
Proc. SPIE 4412, Simple models for crystallization processes, 0000 (10 August 2001); doi: 10.1117/12.435815
Proc. SPIE 4412, Transient surface supersaturation after crystal submersion: II, 0000 (10 August 2001); doi: 10.1117/12.435816
Proc. SPIE 4412, Theory of behavior of ionized hydrogen in GaSb crystal structure, 0000 (10 August 2001); doi: 10.1117/12.435817
Proc. SPIE 4412, Dynamics and thermodynamics of quantum crystals near the instability point in the self-consistent phonon theory, 0000 (10 August 2001); doi: 10.1117/12.435818
Proc. SPIE 4412, Calculations of third-order electronic susceptibility of alkali halides, 0000 (10 August 2001); doi: 10.1117/12.435819
Proc. SPIE 4412, Gd3+-Yb3+ exchange interactions in LiYbxY1-xF4 single crystals, 0000 (10 August 2001); doi: 10.1117/12.435820
Proc. SPIE 4412, Crystal lattice dynamics of various silicon-carbide polytypes, 0000 (10 August 2001); doi: 10.1117/12.435822
Proc. SPIE 4412, Theoretical model of carrier flow process on boundary of electrode-dye layer, 0000 (10 August 2001); doi: 10.1117/12.435823
Structural, Optical, and Electrical Characterization of Crystalline Materials
Proc. SPIE 4412, Semiconductor surface characterization by scanning probe microscopies, 0000 (10 August 2001); doi: 10.1117/12.435824
Proc. SPIE 4412, Phase transitions in double tungstate in extremely low-dimensional and low-symmetry compounds with cooperative Jahn-Teller effect, 0000 (10 August 2001); doi: 10.1117/12.435825
Proc. SPIE 4412, Investigation of thermal annealing by gamma irradiation at room temperature in LiNbO3 crystals, 0000 (10 August 2001); doi: 10.1117/12.435826
Proc. SPIE 4412, Monocrystals Ag3SbS3: investigation of electrical characteristics, 0000 (10 August 2001); doi: 10.1117/12.435827
Proc. SPIE 4412, Charge traps and emission kinetics in LuAP:Ce, 0000 (10 August 2001); doi: 10.1117/12.435828
Proc. SPIE 4412, Energy transfer processes in (Lu,Gd)AlO3:Ce, 0000 (10 August 2001); doi: 10.1117/12.435829
Proc. SPIE 4412, Thermal fixing of holographic gratings in nearly stoichiometric LiNbO3 crystals, 0000 (10 August 2001); doi: 10.1117/12.435830
Proc. SPIE 4412, High-temperature properties of the fcc metallic crystals in anharmonic approximation, 0000 (10 August 2001); doi: 10.1117/12.435831
Proc. SPIE 4412, Investigation of highly energetic transitions in some Pr3+-doped fluoride and oxide crystals, 0000 (10 August 2001); doi: 10.1117/12.435833
Proc. SPIE 4412, Crystal field study of Gd3+-doped LaxRE1-xF3 (RE = Ce,Pr,Nd) single crystals, 0000 (10 August 2001); doi: 10.1117/12.435834
Proc. SPIE 4412, PIXE and magnetic investigations of LaxRE1-xF3 (RE = Ce,Nd) single crystals, 0000 (10 August 2001); doi: 10.1117/12.435835
Proc. SPIE 4412, Nonlinear I-V characteristics and threshold switching in As-Te-In glasses, 0000 (10 August 2001); doi: 10.1117/12.435836
Proc. SPIE 4412, Irradiation effect on the pinning potential of YBCO single crystal, 0000 (10 August 2001); doi: 10.1117/12.435837
Proc. SPIE 4412, Lower critical fields in BKBO single crystals, 0000 (10 August 2001); doi: 10.1117/12.435838
Proc. SPIE 4412, Determining of the material parameters of ZnxCdyHg1-x-yTe by magnetophonon spectroscopy, 0000 (10 August 2001); doi: 10.1117/12.435839
Proc. SPIE 4412, Magnetic ordering of Dy3+ ion in low-dimensional CsDy(WO4)2 double tungstate, 0000 (10 August 2001); doi: 10.1117/12.435840
Proc. SPIE 4412, Studies of manganites by magnetic resonance spectroscopy methods, 0000 (10 August 2001); doi: 10.1117/12.435841
Proc. SPIE 4412, Effect of pressure and magnetic field on the phase transitions in lanthanum-deficient manganites, 0000 (10 August 2001); doi: 10.1117/12.435842
Proc. SPIE 4412, Optical properties of potassium erbium double-tungstate KEr(WO4)2, 0000 (10 August 2001); doi: 10.1117/12.435844
Proc. SPIE 4412, Photoinduced optical effects in BiB3O6 glass, 0000 (10 August 2001); doi: 10.1117/12.435845
Proc. SPIE 4412, Influence of the growth conditions on the elastic properties of SrLaAlO4 and SrLaGaO4 crystals studied by Brillouin light scattering, 0000 (10 August 2001); doi: 10.1117/12.435846
Proc. SPIE 4412, Temperature, absorption, and excitation study of the A1-xBxC crystals by Raman scattering method, 0000 (10 August 2001); doi: 10.1117/12.435847
Proc. SPIE 4412, Thermal ionization energy of Mg acceptors in GaN: effects of doping level and compensation, 0000 (10 August 2001); doi: 10.1117/12.435848
Proc. SPIE 4412, Elastic and elasto-optic properties of Zn1-xBexSe mixed crystals by Brillouin scattering method, 0000 (10 August 2001); doi: 10.1117/12.435849
Proc. SPIE 4412, Correlation of domain structure of TGS single crystals doped with serine and its dielectric properties: new constructed computer measuring system for quantity analysis of domain images, 0000 (10 August 2001); doi: 10.1117/12.435850
Proc. SPIE 4412, Excited-state absorption in the Cr6+O2- center in Li2B4O7 glass, 0000 (10 August 2001); doi: 10.1117/12.435851
Proc. SPIE 4412, Modeling of the carrier mobility at the silicon oxynitride-silicon interface, 0000 (10 August 2001); doi: 10.1117/12.435852