PROCEEDINGS VOLUME 4413
INTERNATIONAL CONFERENCE ON SOLID STATE CRYSTALS 2000 | 9-13 OCTOBER 2000
International Conference on Solid State Crystals 2000: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology
INTERNATIONAL CONFERENCE ON SOLID STATE CRYSTALS 2000
9-13 October 2000
Zakopane, Poland
Thin Layers and Epitaxial Growth
Proc. SPIE 4413, Miniaturization: enabling technology for the new millennium, 0000 (17 April 2001); doi: 10.1117/12.425401
Proc. SPIE 4413, Epitaxy on GaN bulk crystals, 0000 (17 April 2001); doi: 10.1117/12.425412
Proc. SPIE 4413, Excitons at the p-type modulation doped Al0.5Ga0.5As/GaAs interface, 0000 (17 April 2001); doi: 10.1117/12.425423
Proc. SPIE 4413, Pseudobinary Cd1-xPbxSe thin films, 0000 (17 April 2001); doi: 10.1117/12.425434
Proc. SPIE 4413, Lattice stress gradients in zinc oxide thin films and their influence on the preferentially oriented growth of the films, 0000 (17 April 2001); doi: 10.1117/12.425445
Proc. SPIE 4413, Enhancement of the electrophotographic sensitivity of amorphous selenium films using a PVK polymer barrier layer, 0000 (17 April 2001); doi: 10.1117/12.425456
Proc. SPIE 4413, Optical properties of GaN layers grown by MOCVD, 0000 (17 April 2001); doi: 10.1117/12.425467
Proc. SPIE 4413, Influence of plasma spraying process parameters on properties of the deposited Ni-Al coatings, 0000 (17 April 2001); doi: 10.1117/12.425469
Proc. SPIE 4413, Multilayers structure of HgCdTe solid solution after laser annealing without melting, 0000 (17 April 2001); doi: 10.1117/12.425470
Proc. SPIE 4413, Growth, structure, and spectroscopic characterization of the Mn-doped GaN thin films, 0000 (17 April 2001); doi: 10.1117/12.425402
Proc. SPIE 4413, Growth of PLD Hg1-xCdxTe films on Si-patterned substrates, 0000 (17 April 2001); doi: 10.1117/12.425403
Proc. SPIE 4413, Application of GaN laterally overgrown on sapphire, 0000 (17 April 2001); doi: 10.1117/12.425404
Proc. SPIE 4413, Domain structures in the perovskite-type heteroepitaxial ferroelectric thin films, 0000 (17 April 2001); doi: 10.1117/12.425405
Proc. SPIE 4413, Laser epitaxy of HgCdTe ternary alloy, 0000 (17 April 2001); doi: 10.1117/12.425406
Proc. SPIE 4413, Technology and properties of GaAlAsSb layers grown on GaSb substrates, 0000 (17 April 2001); doi: 10.1117/12.425407
Proc. SPIE 4413, Chemical processing of GaSb related to surface preparation and patterning, 0000 (17 April 2001); doi: 10.1117/12.425408
Proc. SPIE 4413, Growth and photoelectric properties of polycrystal Pb1-x-yGexSnyTe:In thin films, 0000 (17 April 2001); doi: 10.1117/12.425409
Proc. SPIE 4413, LPE growth of Hg1-xCdxTe heterostructures from Te-rich solutions, 0000 (17 April 2001); doi: 10.1117/12.425410
Crystalline Nanostructures and Films and their Formation and Properties
Proc. SPIE 4413, Wigner crystal and other insulating phases of two-dimensional electrons in high magnetic fields, 0000 (17 April 2001); doi: 10.1117/12.425411
Proc. SPIE 4413, Strain in epitaxial laterally overgrown (ELO) structures, 0000 (17 April 2001); doi: 10.1117/12.425413
Proc. SPIE 4413, Properties of fullerenes and carbon nanotubes, 0000 (17 April 2001); doi: 10.1117/12.425414
Proc. SPIE 4413, Induced-charge distribution in vertical quantum dots, 0000 (17 April 2001); doi: 10.1117/12.425415
Proc. SPIE 4413, Spin coherence and conductance modulation in mesoscopic structures, 0000 (17 April 2001); doi: 10.1117/12.425416
Proc. SPIE 4413, Coupled In0.6Ga0.4As/GaAs quantum dots: a photoreflectance study, 0000 (17 April 2001); doi: 10.1117/12.425417
Proc. SPIE 4413, Investigation of free and strained germanium whiskers at cryogenic temperatures, 0000 (17 April 2001); doi: 10.1117/12.425418
Proc. SPIE 4413, Effect of the alpha-particle irradiation on the photoluminescence and Raman spectroscopy from GaAs/Al0.3Ga0.7As quantum wells and coupling coefficients for the light and heavy holes, 0000 (17 April 2001); doi: 10.1117/12.425419
Proc. SPIE 4413, Current instabilities in GaAs/InAs quantum dot structures, 0000 (17 April 2001); doi: 10.1117/12.425420
Proc. SPIE 4413, Photoluminescence of porous silicon under pulsed excitation, 0000 (17 April 2001); doi: 10.1117/12.425421
Proc. SPIE 4413, Structure and physical properties of nanostructured Pb(Zr0.5Ti0.5)O3 piezoceramics, 0000 (17 April 2001); doi: 10.1117/12.425422
Proc. SPIE 4413, Q-dots and Q-wires in the microporous and mesoporous zeolite as matrix host-guest and guest-guest interaction, 0000 (17 April 2001); doi: 10.1117/12.425424
Proc. SPIE 4413, Investigation of nanostructured Lu2O3:Tb, 0000 (17 April 2001); doi: 10.1117/12.425425
Structural, Optical, and Electrical Properties of Thin Layers
Proc. SPIE 4413, Scanning probe microscopy/spectroscopy and its applications for nanotechnology, 0000 (17 April 2001); doi: 10.1117/12.425426
Proc. SPIE 4413, Alpha-particle irradiation and annealing effect on the vibrational modes in the GaAs-nipi doping superlattices, 0000 (17 April 2001); doi: 10.1117/12.425427
Proc. SPIE 4413, Photoluminescence Fourier-IR-transmission deep-level transient spectroscopy studies of diamond layers grown by hot-filament CVD, 0000 (17 April 2001); doi: 10.1117/12.425428
Proc. SPIE 4413, X-ray characterization of PbSe/Si layers grown by pulsed laser ablation method, 0000 (17 April 2001); doi: 10.1117/12.425429
Proc. SPIE 4413, Deep-level defects in semi-insulating LT MBE GaAs, 0000 (17 April 2001); doi: 10.1117/12.425430
Proc. SPIE 4413, Analysis of two-dimensional PITS spectra for characterization of defect centers in high-resistivity materials, 0000 (17 April 2001); doi: 10.1117/12.425431
Proc. SPIE 4413, Investigation of defect levels in semi-insulating materials by modulated photocurrent (MPC), 0000 (17 April 2001); doi: 10.1117/12.425432
Proc. SPIE 4413, Technique of low-frequency noise versus temperature for identification of deep-level defects in semiconductor materials, 0000 (17 April 2001); doi: 10.1117/12.425433
Proc. SPIE 4413, Electrical conductivity of the ZnS:Mn,Cu thin films, 0000 (17 April 2001); doi: 10.1117/12.425435
Proc. SPIE 4413, Electrical and optical properties of m-terphenyl thin films, 0000 (17 April 2001); doi: 10.1117/12.425436
Proc. SPIE 4413, In-situ STM study of copper deposition on Cu(111) single-crystal electrode in sulfuric acid solution, 0000 (17 April 2001); doi: 10.1117/12.425437
Proc. SPIE 4413, Visible photoluminescence from Ge+-ion-implanted SiOxNy annealed under hydrostatic pressure, 0000 (17 April 2001); doi: 10.1117/12.425438
Proc. SPIE 4413, Optical measurements of strain and stress in thin films, 0000 (17 April 2001); doi: 10.1117/12.425439
Proc. SPIE 4413, Investigation of the strain layers in multiple quantum wells by magnetophonon resonance, 0000 (17 April 2001); doi: 10.1117/12.425440
Proc. SPIE 4413, Photoreflectance investigation of delta-doped MOVPE-grown AlxGa1-xAs layers, 0000 (17 April 2001); doi: 10.1117/12.425441
Proc. SPIE 4413, Electrical and photoelectrical behavior of Au/n-CdTe junctions, 0000 (17 April 2001); doi: 10.1117/12.425442
Proc. SPIE 4413, Stress-induced effects in semiconducting epitaxial layers, 0000 (17 April 2001); doi: 10.1117/12.425443
Proc. SPIE 4413, Effect of substrate temperature on the optical properties of chromium films, 0000 (17 April 2001); doi: 10.1117/12.425444
Proc. SPIE 4413, Influence of electric field on spectral and kinetic behavior of thin film cells based on ZnS:Mn, 0000 (17 April 2001); doi: 10.1117/12.425446
Proc. SPIE 4413, Glass-ITO system as electron emitter, 0000 (17 April 2001); doi: 10.1117/12.425447
Optoelectronic Devices
Proc. SPIE 4413, Wide-bandgap III-nitride semiconductors: opportunities for future optoelectronics, 0000 (17 April 2001); doi: 10.1117/12.425448
Proc. SPIE 4413, GaAs/AlGaAs p-type multiple quantum wells for infrared detection at normal incidence: model and experiment, 0000 (17 April 2001); doi: 10.1117/12.425449
Proc. SPIE 4413, Infrared detectors at the beginning of the next millennium, 0000 (17 April 2001); doi: 10.1117/12.425450
Proc. SPIE 4413, Recent developments and applications of quantum well infrared photodetector focal plane arrays, 0000 (17 April 2001); doi: 10.1117/12.425451
Proc. SPIE 4413, Design and fabrication of GaSb/InGaAsSb/AlGaAsSb mid-IR photodetectors, 0000 (17 April 2001); doi: 10.1117/12.425452
Proc. SPIE 4413, Photovoltaic response of Tolypothrix tenuis cells and their fragments in photoelectrochemical cell, 0000 (17 April 2001); doi: 10.1117/12.425453
Proc. SPIE 4413, Photovoltaic detectors based on porous silicon heterostructures, 0000 (17 April 2001); doi: 10.1117/12.425454