PROCEEDINGS VOLUME 4415
ADVANCED OPTICAL MATERIALS AND DEVICES | 16-19 AUGUST 2000
Optical Organic and Inorganic Materials
ADVANCED OPTICAL MATERIALS AND DEVICES
16-19 August 2000
Vilnius, United States
Holographic Recording and Components
Proc. SPIE 4415, Photoinduced anisotropy and holographic recording in amorphous chalcogenides, 0000 (10 April 2001); doi: 10.1117/12.425471
Proc. SPIE 4415, Information quality of volume holographic memory devices, 0000 (10 April 2001); doi: 10.1117/12.425481
Proc. SPIE 4415, Fast photorefractive response in BSO in the near infrared, 0000 (10 April 2001); doi: 10.1117/12.425492
Proc. SPIE 4415, Photoconductive patterns in semiconductors for electromagnetic field control: a review, 0000 (10 April 2001); doi: 10.1117/12.425503
Proc. SPIE 4415, Influence of thermal processes in holographic media on the characteristics of information recording, storage, and reconstruction, 0000 (10 April 2001); doi: 10.1117/12.425509
Proc. SPIE 4415, Large-format automated pulsed holography camera system, 0000 (10 April 2001); doi: 10.1117/12.425510
Proc. SPIE 4415, Indentation creep and stress relaxation in amorphous As-S-Se and As-S films, 0000 (10 April 2001); doi: 10.1117/12.425511
Proc. SPIE 4415, Influence of phosphorus sublayer on properties of the selenium and tellurium island layers, 0000 (10 April 2001); doi: 10.1117/12.425512
Proc. SPIE 4415, Amorphous chalcogenide semiconductor resists for holography and electron-beam lithography, 0000 (10 April 2001); doi: 10.1117/12.425513
Proc. SPIE 4415, Metal sulfide thin films by chemical spray pyrolysis, 0000 (10 April 2001); doi: 10.1117/12.425472
Semiconductors and Laser Technology
Proc. SPIE 4415, Silicon-based light-emitting materials: implanted SiO2 films and wide-bandgap a-Si:H, 0000 (10 April 2001); doi: 10.1117/12.425473
Proc. SPIE 4415, Effect on conductance of an isomer state in a quantum point contact, 0000 (10 April 2001); doi: 10.1117/12.425474
Proc. SPIE 4415, Effects of localization in CdTe-based quantum well structures, 0000 (10 April 2001); doi: 10.1117/12.425475
Proc. SPIE 4415, Solid state lasers with pulse compression by transient stimulated Brillouin and Raman scattering, 0000 (10 April 2001); doi: 10.1117/12.425476
Proc. SPIE 4415, Structure investigation of luminescent porous GaAs layers, 0000 (10 April 2001); doi: 10.1117/12.425477
Proc. SPIE 4415, Energy distribution function of hot holes in InGaAs/GaAs quantum well heterostructure: determination and analysis, 0000 (10 April 2001); doi: 10.1117/12.425478
Proc. SPIE 4415, Optical and electrical low-frequency noise of ridge waveguide InGaAsP/InP MQW lasers, 0000 (10 April 2001); doi: 10.1117/12.425479
Proc. SPIE 4415, Thin films of EuO-CeO2 semiconductor system, 0000 (10 April 2001); doi: 10.1117/12.425480
Organic Materials
Proc. SPIE 4415, Charge separation in molecular compounds from the charge transfer states, 0000 (10 April 2001); doi: 10.1117/12.425482
Proc. SPIE 4415, Stationary and transient photoconduction in conjugated polymers, 0000 (10 April 2001); doi: 10.1117/12.425483
Proc. SPIE 4415, Transport features of photogenerated and equilibrium charge carriers in thin PPV polymer layers, 0000 (10 April 2001); doi: 10.1117/12.425484
Proc. SPIE 4415, Excited-state dynamics in indandione-1,3 pyridinium betaine compounds, 0000 (10 April 2001); doi: 10.1117/12.425485
Proc. SPIE 4415, Thermoelectric phenomena in the PDLC films, 0000 (10 April 2001); doi: 10.1117/12.425486
Proc. SPIE 4415, Optically induced azo-hydrazone tautomerism of some 2,6-dialkylphenol-based azobenzenes, 0000 (10 April 2001); doi: 10.1117/12.425487
Proc. SPIE 4415, Transport features of electrons in thin film layers of bis[4-(anthraquinone-1-amino)-3-hydroxy-1-thiabutyl]benzene, 0000 (10 April 2001); doi: 10.1117/12.425488
Theory, Models, and Computer Simulation
Proc. SPIE 4415, Features of press-induced birefringence of light for Si and Ge crystals in the absorption frequency region, 0000 (10 April 2001); doi: 10.1117/12.425489
Proc. SPIE 4415, Correlated Coulomb quantum kinetics in optically excited semiconductors, 0000 (10 April 2001); doi: 10.1117/12.425490
Proc. SPIE 4415, Monte Carlo simulation of small- and large-signal response operation of a GaN THz maser, 0000 (10 April 2001); doi: 10.1117/12.425491
Proc. SPIE 4415, Diagnostics of ultrathin dielectric layers by the method of differential reflection of light, 0000 (10 April 2001); doi: 10.1117/12.425493
Proc. SPIE 4415, Zero annihilation mode approach in describing excitons in finite molecular systems, 0000 (10 April 2001); doi: 10.1117/12.425494
Proc. SPIE 4415, Resonant intersubband transitions of holes in uniaxially stressed p-Ge, 0000 (10 April 2001); doi: 10.1117/12.425495
Proc. SPIE 4415, Screened Coulomb potential approach for the study of resonant impurity states in uniaxially deformed p-Ge, 0000 (10 April 2001); doi: 10.1117/12.425496
Proc. SPIE 4415, Influence of dynamic grating on second-harmonic generation at surface, 0000 (10 April 2001); doi: 10.1117/12.425497
Proc. SPIE 4415, Modeling of nonparaxial propagation of parametric spatial solitons, 0000 (10 April 2001); doi: 10.1117/12.425498
Proc. SPIE 4415, Methods of determination of electric parameters of high-resistance layers with defects, 0000 (10 April 2001); doi: 10.1117/12.425499
Proc. SPIE 4415, Determination of the electron momentum distribution in Al2O3 using x-ray noncoherent scattering data, 0000 (10 April 2001); doi: 10.1117/12.425500
Radiation Effects in Optical Crystals and Glasses
Proc. SPIE 4415, Heavy ion-induced damage and modifications of insulating materials, 0000 (10 April 2001); doi: 10.1117/12.425501
Proc. SPIE 4415, Ion and electron trapping: release and relaxation processes in fluoride crystals, 0000 (10 April 2001); doi: 10.1117/12.425502
Proc. SPIE 4415, Optical and electron paramagnetic resonance studies of hydrogenated amorphous carbon (a-C:H) thin films formed by direct ion beam deposition method, 0000 (10 April 2001); doi: 10.1117/12.425504
Proc. SPIE 4415, IR optical properties of Sb2S3-GeS2(Ge2S3) chalcogenide glasses and effect of gamma irradiation, 0000 (10 April 2001); doi: 10.1117/12.425505
Proc. SPIE 4415, Gamma irradiation effect on the optical properties of GexSb40-xS60 chalcogenide glasses, 0000 (10 April 2001); doi: 10.1117/12.425506
Proc. SPIE 4415, Effect of light exposure on dislocation mobility in fullerite C60 crystals, 0000 (10 April 2001); doi: 10.1117/12.425507
Proc. SPIE 4415, Direct modification of optical and luminescent characteristics of PbWO4, 0000 (10 April 2001); doi: 10.1117/12.425508
Back to Top