Photomask Patterning
Proc. SPIE 4562, 100-nm OPC mask patterning using raster-scan 50-kV pattern generation technology, 0000 (11 March 2002); doi: 10.1117/12.491928
Proc. SPIE 4562, Extended capability of laser writer for masks beyond 180-nm nodes, 0000 (11 March 2002); doi: 10.1117/12.458290
Proc. SPIE 4562, Implementation and characterization of a DUV raster-scanned mask pattern generation system, 0000 (11 March 2002); doi: 10.1117/12.458301
Proc. SPIE 4562, Pattern generation with SLM imaging, 0000 (11 March 2002); doi: 10.1117/12.458312
Proc. SPIE 4562, Technologies for electron-beam reticle writing systems for 130-nm node and below, 0000 (11 March 2002); doi: 10.1117/12.458323
Materials, Processes, and Process Integration I
Proc. SPIE 4562, Development of refined cleaning technique focusing on ecological viewpoint, 0000 (11 March 2002); doi: 10.1117/12.458332
Materials, Processes, and Process Integration II
Proc. SPIE 4562, Utilization of optical emission endpoint in photomask dry etch processing, 0000 (11 March 2002); doi: 10.1117/12.458343
Proc. SPIE 4562, Loading effect parameters of dry etcher system and their analysis in mask-to-mask loading and within mask loading, 0000 (11 March 2002); doi: 10.1117/12.458353
Proc. SPIE 4562, Tool and process optimization for 100-nm maskmaking using a 50-kV variable shaped e-beam system, 0000 (11 March 2002); doi: 10.1117/12.458252
Proc. SPIE 4562, Evaluation of reticle cleaning performance with different drying methods for high-grade photomasks, 0000 (11 March 2002); doi: 10.1117/12.458260
Defects, Inspection, and Repair I
Proc. SPIE 4562, Multibeam high-resolution die-to-database reticle inspection, 0000 (11 March 2002); doi: 10.1117/12.458271
Proc. SPIE 4562, Dependence of mask-defect printability and printability criteria on lithography process resolution, 0000 (11 March 2002); doi: 10.1117/12.458279
Proc. SPIE 4562, Inspection of production alternating PSM reticles using UV-based 365-nm reticle inspection tool, 0000 (11 March 2002); doi: 10.1117/12.458284
Proc. SPIE 4562, New approaches to alternating phase-shift mask inspection, 0000 (11 March 2002); doi: 10.1117/12.458285
Data Preparation and Design
Proc. SPIE 4562, Challenging giga-feature pattern generation, 0000 (11 March 2002); doi: 10.1117/12.458286
Proc. SPIE 4562, OPC strategies to minimize mask cost and writing time, 0000 (11 March 2002); doi: 10.1117/12.458287
Proc. SPIE 4562, Integrated method of mask data checking and inspection data prep for manufacturable mask inspection: inspection rule violations, 0000 (11 March 2002); doi: 10.1117/12.458288
Proc. SPIE 4562, GDSII considered harmful, 0000 (11 March 2002); doi: 10.1117/12.458289
Proc. SPIE 4562, Slashing turnaround-time by introducing distributed computing, 0000 (11 March 2002); doi: 10.1117/12.458291
Proc. SPIE 4562, Automation techniques for the handling of photomask data, 0000 (11 March 2002); doi: 10.1117/12.458292
Proc. SPIE 4562, Highly versatile tapeout automation system, 0000 (11 March 2002); doi: 10.1117/12.458293
Defects, Inspection, and Repair II
Proc. SPIE 4562, Use of nanomachining as a technique to reduce scrap of high-end photomasks, 0000 (11 March 2002); doi: 10.1117/12.458294
Proc. SPIE 4562, New algorithm for optical photomask CD metrology for the 100-nm node, 0000 (11 March 2002); doi: 10.1117/12.458295
Mask Metrology, Mask Error, and Specifications
Proc. SPIE 4562, First performance data obtained on next-generation mask metrology tool, 0000 (11 March 2002); doi: 10.1117/12.458296
Proc. SPIE 4562, Tip shape effects in scanning probe metrology, 0000 (11 March 2002); doi: 10.1117/12.458297
Proc. SPIE 4562, CD metrology on OPC features using light optical and electron optical tools, 0000 (11 March 2002); doi: 10.1117/12.458298
Proc. SPIE 4562, 2001 update on the SEMI Standards Mask Qualification Terminology Task Force, 0000 (11 March 2002); doi: 10.1117/12.458299
Proc. SPIE 4562, Improved method for measuring and assessing reticle pinhole defects, 0000 (11 March 2002); doi: 10.1117/12.458300
Advanced Mask Technology I (NGL and 157 nm)
Proc. SPIE 4562, Understanding Bossung curve asymmetry and focus shift effect in EUV lithography, 0000 (11 March 2002); doi: 10.1117/12.458302
Advanced Mask Technology II (NGL and 157 nm)
Proc. SPIE 4562, Enhanced optical inspectability of patterned EUVL mask, 0000 (11 March 2002); doi: 10.1117/12.458303
Proc. SPIE 4562, Influence of e-beam-induced contamination on the printability of resist structures at 157-nm exposure, 0000 (11 March 2002); doi: 10.1117/12.458304
Proc. SPIE 4562, Measurement of the magnitude of triboelectrification in the environment of the 157-nm stepper, 0000 (11 March 2002); doi: 10.1117/12.458305
Wafer, PSM, and Mask Process Integration
Proc. SPIE 4562, PMJ01 panel discussion review: issues on mask technology for 100-nm lithography, 0000 (11 March 2002); doi: 10.1117/12.458306
Proc. SPIE 4562, Financial impact of technology acceleration on semiconductor masks, 0000 (11 March 2002); doi: 10.1117/12.458307
Proc. SPIE 4562, Using high-resolution (0.13 um) UV-based reticle inspection for CD uniformity in incoming quality control, 0000 (11 March 2002); doi: 10.1117/12.458308
Proc. SPIE 4562, Characterization of an integrated multibeam laser mask-pattern generation and dry etch processing total solution, 0000 (11 March 2002); doi: 10.1117/12.458309
Proc. SPIE 4562, Wafer FAB experience of implementing 50-kV vector e-beam mask writer and dry etch process for 130-nm technology node generation, 0000 (11 March 2002); doi: 10.1117/12.458310
Resolution Enhancement Techniques
Proc. SPIE 4562, New method for reducing across chip poly-CD variation with statistical OPC/gauge capability analysis, 0000 (11 March 2002); doi: 10.1117/12.458311
Proc. SPIE 4562, Alternating phase shifting mask implementation to 0.1-um logic gates, 0000 (11 March 2002); doi: 10.1117/12.458313
Proc. SPIE 4562, Performance data of a new 248-nm CD metrology tool proved on COG reticles and PSMs, 0000 (11 March 2002); doi: 10.1117/12.458314
Proc. SPIE 4562, New generation photomasks: 193-nm defect printability study, 0000 (11 March 2002); doi: 10.1117/12.458315
Proc. SPIE 4562, Performance optimization of the double-exposure alternating PSM for (sub-)100-nm ICs, 0000 (11 March 2002); doi: 10.1117/12.458316
Proc. SPIE 4562, Polarized phase shift mask: concept, design, and potential advantages to photolithography process and physical design, 0000 (11 March 2002); doi: 10.1117/12.458317
Friday Special Session: "Reticle Defects: Will They Break Moore's Law?" I
Proc. SPIE 4562, Partitioning of photomask processes for defects, 0000 (11 March 2002); doi: 10.1117/12.458318
Proc. SPIE 4562, Optimization of ArF alternating phase-shifting mask structure for 100-nm node and inspection of phase defects, 0000 (11 March 2002); doi: 10.1117/12.458319
Proc. SPIE 4562, Improved yield with SMIF implementation on ALTA systems, 0000 (11 March 2002); doi: 10.1117/12.458320
Friday Special Session: "Reticle Defects: Will They Break Moore's Law?" II
Proc. SPIE 4562, Defect dispositioning in a reticle qualification process, 0000 (11 March 2002); doi: 10.1117/12.458321
Proc. SPIE 4562, Defect printability analysis of attenuated PSM using PASStm, 0000 (11 March 2002); doi: 10.1117/12.458322
Proc. SPIE 4562, Inspection and repair of EUV, 0000 (11 March 2002); doi: 10.1117/12.458324
Proc. SPIE 4562, Characterization of quartz-etched PSM masks for KrF lithography at the 100-nm node, 0000 (11 March 2002); doi: 10.1117/12.458325
Proc. SPIE 4562, Wavelength-dependent mask defect inspection and printing, 0000 (11 March 2002); doi: 10.1117/12.458326
Poster Session
Proc. SPIE 4562, Adjustment of optical proximity correction (OPC) software for mask process correction (MPC). Module 1: Optical mask writing tool simulation, 0000 (11 March 2002); doi: 10.1117/12.458328
Proc. SPIE 4562, New photomask patterning method based on KrF stepper, 0000 (11 March 2002); doi: 10.1117/12.458329
Proc. SPIE 4562, Comparison of contact hole definition using laser and shaped e-beam mask writers and its influence on wafer level pattern fidelity, 0000 (11 March 2002); doi: 10.1117/12.458330
Proc. SPIE 4562, Impact of graybeam method of virtual address reduction on image quality, 0000 (11 March 2002); doi: 10.1117/12.458331
Proc. SPIE 4562, Throughput optimization of electron-beam lithography in photomask fabrication regarding acceptable accuracy of critical dimensions, 0000 (11 March 2002); doi: 10.1117/12.458333