PROCEEDINGS VOLUME 4580
ASIA-PACIFIC OPTICAL AND WIRELESS COMMUNICATIONS CONFERENCE AND EXHIBIT | 11-15 NOVEMBER 2001
Optoelectronics, Materials, and Devices for Communications
ASIA-PACIFIC OPTICAL AND WIRELESS COMMUNICATIONS CONFERENCE AND EXHIBIT
11-15 November 2001
Beijing, China
High-Power Pump Lasers
Proc. SPIE 4580, Determining kinks for 980-nm lasers using time-resolved far-field scan, 0000 (19 October 2001); doi: 10.1117/12.444920
Proc. SPIE 4580, Analysis of optical gain of GaInNAs/GaAs compressive strained quantum well lasers, 0000 (19 October 2001); doi: 10.1117/12.444946
Proc. SPIE 4580, High-power 980-nm semiconductor lasers by MBE, 0000 (19 October 2001); doi: 10.1117/12.444955
Proc. SPIE 4580, High-power coupled large-cavity lasers and multiactive light-emitting diodes, 0000 (19 October 2001); doi: 10.1117/12.444963
Semiconductor Lasers and Modulators I
Proc. SPIE 4580, High-speed DFB laser and EMLs, 0000 (19 October 2001); doi: 10.1117/12.444991
Proc. SPIE 4580, Band lineup calculations for strained InGaAs(P)/InP quantum well structures, 0000 (19 October 2001); doi: 10.1117/12.445001
Vertical Cavity Surface-Emitting Lasers
Proc. SPIE 4580, 1.55-um tunable VCSEL for metro-WDM applications, 0000 (19 October 2001); doi: 10.1117/12.445010
Proc. SPIE 4580, 850-nm implanted and oxide VCSELs in multigigabit data communication application, 0000 (19 October 2001); doi: 10.1117/12.444921
Proc. SPIE 4580, Nonlinearity effects of lateral density diffusion coefficient on gain-guided VCSEL performance, 0000 (19 October 2001); doi: 10.1117/12.444931
Proc. SPIE 4580, 16-channel 0.35-um CMOS/VCSEL optoelectronic devices, 0000 (19 October 2001); doi: 10.1117/12.444940
Semiconductor Lasers and Modulators II
Proc. SPIE 4580, Recent progress of 10Gb/s laser diodes for metropolitan area networks, 0000 (19 October 2001); doi: 10.1117/12.444942
Proc. SPIE 4580, 1.3 um GaInNAs/GaAs quantum well lasers and photodetectors, 0000 (19 October 2001); doi: 10.1117/12.444943
Proc. SPIE 4580, Optimization of wavelength detuning of high-speed electro-absorption modulators for better transmission capability, 0000 (19 October 2001); doi: 10.1117/12.444944
Passive Components and Packing
Proc. SPIE 4580, Low-loss polymeric materials for passive waveguide components in fiber optical telecommunication, 0000 (19 October 2001); doi: 10.1117/12.444945
Proc. SPIE 4580, Rectangle variable optical filter using dynamic grating in erbium-doped fiber controlled by synthesis of optical coherence function: proposal and simulation, 0000 (19 October 2001); doi: 10.1117/12.444947
Proc. SPIE 4580, Synthesis of nanoscale optical materials using nanoparticle manufacturing (NPM) technology, 0000 (19 October 2001); doi: 10.1117/12.444948
Proc. SPIE 4580, Influence of annealing on optical properties of ZnO film, 0000 (19 October 2001); doi: 10.1117/12.444949
Semiconductor Optical Amplifiers
Proc. SPIE 4580, Novel polarization-insensitive semiconductor optical amplifier structure with large 3dB bandwidth, 0000 (19 October 2001); doi: 10.1117/12.444950
Proc. SPIE 4580, Nonlinear optical effects in semiconductor optical amplifiers and their applications to all-optical switching, 0000 (19 October 2001); doi: 10.1117/12.444951
Proc. SPIE 4580, OPFET-LAOS: a new optoelectronic integrated device for light amplifying optical switch, 0000 (19 October 2001); doi: 10.1117/12.444952
Proc. SPIE 4580, Experimental demonstration of all-optical AND and NAND gates using cross-polarization modulation in a semiconductor optical amplifier, 0000 (19 October 2001); doi: 10.1117/12.444953
Proc. SPIE 4580, Tree wave model of distributed temperature and strain optical fiber sensors, 0000 (19 October 2001); doi: 10.1117/12.444954
Waveguide Devices and Integrated Optics
Proc. SPIE 4580, Selective intermixing of Ga(In)NAs/GaAs quantum well structures using SiO2 encapsulation and rapid thermal annealing, 0000 (19 October 2001); doi: 10.1117/12.444956
Proc. SPIE 4580, Modified TMM for waveguides with conducting interfaces, 0000 (19 October 2001); doi: 10.1117/12.444957
Proc. SPIE 4580, Envelope ADI-FDTD method with PML boundary condition for photonic simulations, 0000 (19 October 2001); doi: 10.1117/12.444958
Microcavity and Quantum Dot Devices
Proc. SPIE 4580, Progress and prospect of quantum dot lasers, 0000 (19 October 2001); doi: 10.1117/12.444959
Proc. SPIE 4580, Potential light source for photonic integrated circuits based on the equilateral triangle resonator, 0000 (19 October 2001); doi: 10.1117/12.444960
Proc. SPIE 4580, Normal-incidence near-1.55-um Ge quantum dot photodetectors on Si substrate, 0000 (19 October 2001); doi: 10.1117/12.444961
Proc. SPIE 4580, Optical characterization of the Ge/Si (001) islands in multilayer structure, 0000 (19 October 2001); doi: 10.1117/12.444962
Novel Materials and Devices I
Proc. SPIE 4580, Photonic forbidden band in volume holograms, 0000 (19 October 2001); doi: 10.1117/12.444964
Proc. SPIE 4580, Epitaxial lateral overgrowth of GaN by HVPE and MOVPE, 0000 (19 October 2001); doi: 10.1117/12.444965
Proc. SPIE 4580, Novel high-sensitivity CE-PTHPT for optical fiber communication, 0000 (19 October 2001); doi: 10.1117/12.444966
Photodetectors and Si-based Optoelectronics
Proc. SPIE 4580, 1.3 um GaInNAs/GaAs multiple quantum wells resonant-cavity-enhanced photodetectors, 0000 (19 October 2001); doi: 10.1117/12.444967
Proc. SPIE 4580, Investigation on two-color detection using asymmetric InGaAs/GaAs/AlGaAs multiquantum wells with superlattice barriers, 0000 (19 October 2001); doi: 10.1117/12.444968
Proc. SPIE 4580, Long-wavelength Si-based MQW photodetectors for application in optical fiber communication, 0000 (19 October 2001); doi: 10.1117/12.444969
Additional Paper
Proc. SPIE 4580, Room-temperature luminescence at 1.54 um and other wavelengths from Er-doped Si-rich Si oxide, 0000 (19 October 2001); doi: 10.1117/12.444970
Photodetectors and Si-based Optoelectronics
Proc. SPIE 4580, Fabrication of planar optical waveguide material on silicon by flame hydrolysis deposition, 0000 (19 October 2001); doi: 10.1117/12.444971
Novel Materials and Devices II
Proc. SPIE 4580, III-V-semiconductor-based surface-micromachined catilevers for micro-opto-electro-mechanical systems, 0000 (19 October 2001); doi: 10.1117/12.444972
Proc. SPIE 4580, Microphotonics: physics, technology, and an outlook toward the 21st Century, 0000 (19 October 2001); doi: 10.1117/12.444973
Proc. SPIE 4580, Novel 10-GHz-order electro-optic frequency shifter using slant-stripe-typed periodic domain inversion, 0000 (19 October 2001); doi: 10.1117/12.444974
Proc. SPIE 4580, All fiber acousto-optic coupling ring resonator, 0000 (19 October 2001); doi: 10.1117/12.444975
Proc. SPIE 4580, Important aspects of volume NLO crystal growth for optoelectronic devices, 0000 (19 October 2001); doi: 10.1117/12.444976
Organic OE Materials and Devices
Proc. SPIE 4580, Recent development of crosslinked NLO polymers for large bandwidth electro-optical modulations, 0000 (19 October 2001); doi: 10.1117/12.444977
Proc. SPIE 4580, Organic quantum well EL device with a novel characteristic, 0000 (19 October 2001); doi: 10.1117/12.444978
Proc. SPIE 4580, Multidimensional charge-transfer chromophore: a novel strategy to achieving a highly efficient and stable second-order nonlinear optical polyimide, 0000 (19 October 2001); doi: 10.1117/12.444979
Proc. SPIE 4580, Optical properties of 3,4,9,10-perylenetetracarboxylic dianhidride (PTCDA), 0000 (19 October 2001); doi: 10.1117/12.444980
Proc. SPIE 4580, Optical nonlinearities of (TBA)2Ni(dmit)2: saturable-absorption and negative third-order nonlinear refraction due to charge-transfer transition, 0000 (19 October 2001); doi: 10.1117/12.444981
Proc. SPIE 4580, Optical and optoelectronic materials derived from biopolymer deoxyribonucleic acid (DNA), 0000 (19 October 2001); doi: 10.1117/12.444982
Proc. SPIE 4580, Third-order optical nonlinearities of poly(arylamino-phenylenevinylene) studied with femtosecond pulses, 0000 (19 October 2001); doi: 10.1117/12.444983
Poster Session
Proc. SPIE 4580, Volume holographic optical storage nanotechnology, 0000 (19 October 2001); doi: 10.1117/12.444984
Passive Components and Packing
Proc. SPIE 4580, Multifunctional diffractive optics element for high-energy laser system, 0000 (19 October 2001); doi: 10.1117/12.444985
Poster Session
Proc. SPIE 4580, Nonlinear optical properties and morphologies of vanadyl-phthalocyanine crystal prepared on KCl substrate, 0000 (19 October 2001); doi: 10.1117/12.444986
Proc. SPIE 4580, Dynamics of interface traps in bonded silicon wafers, 0000 (19 October 2001); doi: 10.1117/12.444987
Proc. SPIE 4580, Pseudo-isotropic materials as reflectionless media, 0000 (19 October 2001); doi: 10.1117/12.444988
Passive Components and Packing
Proc. SPIE 4580, Upconversion mechanism numerical analysis about Er3+-doped pentaphosphate crystals, 0000 (19 October 2001); doi: 10.1117/12.444989
Poster Session
Proc. SPIE 4580, Strength numerical calculation of the upconversion luminescence in Er3+-doped pentaphosphate crystals, 0000 (19 October 2001); doi: 10.1117/12.444990
Proc. SPIE 4580, The dynamic processes of the Er3+ ion's populations of ErP5O14 crystal excited by 650nm laser, 0000 (19 October 2001); doi: 10.1117/12.444992