PROCEEDINGS VOLUME 4600
INTERNATIONAL SYMPOSIUM ON OPTOELECTONICS AND MICROELECTRONICS | 7-10 NOVEMBER 2001
Advances in Microelectronic Device Technology
INTERNATIONAL SYMPOSIUM ON OPTOELECTONICS AND MICROELECTRONICS
7-10 November 2001
Nanjing, China
Recent Advances in Microelectronic and Optoelectronic Device Technologies
Proc. SPIE 4600, How small can MOSFETs get?, 0000 (15 October 2001); doi: 10.1117/12.444664
Proc. SPIE 4600, InP-based three-dimensional photonic integrated circuits, 0000 (15 October 2001); doi: 10.1117/12.444674
Proc. SPIE 4600, Low-cost silicon receiver OEICs, 0000 (15 October 2001); doi: 10.1117/12.444680
Proc. SPIE 4600, Submicron BCDMOS process with extended LDMOS safe-operating-area by optimizing body current, 0000 (15 October 2001); doi: 10.1117/12.444681
Recent Advances in Integrated Circuit Design Technologies
Proc. SPIE 4600, Terahertz applications of integrated circuits based on intrinsic Josephson junctions in high Tc superconductors, 0000 (15 October 2001); doi: 10.1117/12.444682
Recent Advances in Microelectronic and Optoelectronic Device Technologies
Proc. SPIE 4600, 1/f noise in semiconductor heterostructure laser diodes, 0000 (15 October 2001); doi: 10.1117/12.444683
Proc. SPIE 4600, Optically controlled E-MESFET for VLSI application, 0000 (15 October 2001); doi: 10.1117/12.444654
Proc. SPIE 4600, Sensitivity of the a-C:H gate pH-ISFET, 0000 (15 October 2001); doi: 10.1117/12.444655
Proc. SPIE 4600, Preparation of the SnO2 gate pH-ISFET by sol gel technology, 0000 (15 October 2001); doi: 10.1117/12.444656
Recent Advances in Materials Technologies
Proc. SPIE 4600, Photonic crystal preparation by a wafer bonding approach, 0000 (15 October 2001); doi: 10.1117/12.444657
Proc. SPIE 4600, Ultrathin wafers: processing and defect issues, 0000 (15 October 2001); doi: 10.1117/12.444658
Proc. SPIE 4600, Silicon direct bonding approach to high voltage power device (insulated gate bipolar transistors), 0000 (15 October 2001); doi: 10.1117/12.444659
Proc. SPIE 4600, Measurement of the behaviors of optoelectron in the photosensitive material by the dielectric spectrum technology, 0000 (15 October 2001); doi: 10.1117/12.444660
Proc. SPIE 4600, Numerical and theoretical study of gaseous flows in a microtube, 0000 (15 October 2001); doi: 10.1117/12.444661
Proc. SPIE 4600, Ultrafast emission of nanodiamond powder, 0000 (15 October 2001); doi: 10.1117/12.444662
Recent Advances in Integrated Circuit Design Technologies
Proc. SPIE 4600, Quantum transport model for sub-100 nm CMOS devices, 0000 (15 October 2001); doi: 10.1117/12.444663
Proc. SPIE 4600, ESD protection design for advanced CMOS, 0000 (15 October 2001); doi: 10.1117/12.444665
Proc. SPIE 4600, Layout techniques for VLSI yield enhancement, 0000 (15 October 2001); doi: 10.1117/12.444666
Proc. SPIE 4600, Debug of IC-card chips assisted by FIB and in-situ mechanical microprobing, 0000 (15 October 2001); doi: 10.1117/12.444667
Proc. SPIE 4600, Open loop method for waveform acquisition on electron-beam probe systems, 0000 (15 October 2001); doi: 10.1117/12.444668
Proc. SPIE 4600, Thermal time constants of VLSI circuits, 0000 (15 October 2001); doi: 10.1117/12.444669
Session 4
Proc. SPIE 4600, Tunable F-P optical filter based on microcavity structure, 0000 (15 October 2001); doi: 10.1117/12.444670
Proc. SPIE 4600, Preparations of Zr-rich PZT thin film on YBCO electrode and investigation of ferroelectric properties, 0000 (15 October 2001); doi: 10.1117/12.444671
Proc. SPIE 4600, Photoconductive switch using epitaxial lift-off low-temperature-grown GaAs, 0000 (15 October 2001); doi: 10.1117/12.444672
Proc. SPIE 4600, Design and simulation of a novel piezoresistive accelerometer for high accuracy and overload ability, 0000 (15 October 2001); doi: 10.1117/12.444673
Proc. SPIE 4600, Extraction of tin by way of direct radiation on SnO2 concentrate with high-power laser, 0000 (15 October 2001); doi: 10.1117/12.444675
Posters
Proc. SPIE 4600, Emission performance of carbon nanotubes, 0000 (15 October 2001); doi: 10.1117/12.444676
Proc. SPIE 4600, Readout circuits for two-dimensional microbolometer arrays, 0000 (15 October 2001); doi: 10.1117/12.444677
Proc. SPIE 4600, Lateral bipolar transistor on SOI with dual-sidewalls structure, 0000 (15 October 2001); doi: 10.1117/12.444678
Proc. SPIE 4600, Transmissive properties of Zr02/Si02 photonic band gap materials, 0000 (15 October 2001); doi: 10.1117/12.444679
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