DFB/DBR Lasers
Proc. SPIE 4646, Dynamics and performance of hybrid distributed Bragg reflector lasers including a chirped fiber grating, 0000 (12 June 2002); doi: 10.1117/12.470502
Proc. SPIE 4646, Uncooled high-speed DFB lasers for gigabit ethernet applications, 0000 (12 June 2002); doi: 10.1117/12.470510
Proc. SPIE 4646, Hole-burning effects in conventional and modified distributed feedback laser structures, 0000 (12 June 2002); doi: 10.1117/12.470521
Proc. SPIE 4646, Dynamics of multisection DFB semiconductor laser: traveling wave and mode approximation models, 0000 (12 June 2002); doi: 10.1117/12.470531
Quantum Dot and Mid-Infrared Lasers and LEDs
Proc. SPIE 4646, 1.3-um edge- and surface-emitting quantum dot lasers grown on GaAs substrates, 0000 (12 June 2002); doi: 10.1117/12.470541
Proc. SPIE 4646, Phonon-assisted carrier transport in type-II interband quantum cascade lasers, 0000 (12 June 2002); doi: 10.1117/12.470560
Proc. SPIE 4646, Self-consistent model of type-II quantum cascade lasers, 0000 (12 June 2002); doi: 10.1117/12.470570
Proc. SPIE 4646, Electroluminescence from InAsSb quantum dot light-emitting diodes grown by liquid phase epitaxy, 0000 (12 June 2002); doi: 10.1117/12.470576
Quantum Well and Quantum Dot Infrared Photodetectors
Proc. SPIE 4646, QWIP technology: advances and prospects, 0000 (12 June 2002); doi: 10.1117/12.470503
Proc. SPIE 4646, Quantum dot infrared photodetector, 0000 (12 June 2002); doi: 10.1117/12.470504
Proc. SPIE 4646, Quantum dot infrared photodetectors, 0000 (12 June 2002); doi: 10.1117/12.470505
Photodetectors
Proc. SPIE 4646, High-speed and high-efficiency AlInAs/GaInAs waveguide photodetectors for use in 40-Gbps applications, 0000 (12 June 2002); doi: 10.1117/12.470506
Proc. SPIE 4646, Use of photodetectors for the measurement of carrier velocities in wide-bandgap semiconductors, 0000 (12 June 2002); doi: 10.1117/12.470507
Proc. SPIE 4646, Modeling the optoelectronic mixing effect in metal-semiconductor-metal detectors, 0000 (12 June 2002); doi: 10.1117/12.470508
Novel VCSELs
Proc. SPIE 4646, Advances in 1300-nm InGaAsN quantum well VCSELs, 0000 (12 June 2002); doi: 10.1117/12.470509
Proc. SPIE 4646, Ultrawide continuously tunable 1.55-um vertical-air-cavity filters and VCSELs based on micromachined electrostatic actuation, 0000 (12 June 2002); doi: 10.1117/12.470511
VCSEL and Microcavity Physics
Proc. SPIE 4646, Temperature dependence of the spontaneous emission factor in microcavities, 0000 (12 June 2002); doi: 10.1117/12.470512
Proc. SPIE 4646, Improved effective index method for oxide-confined VCSEL mode analysis, 0000 (12 June 2002); doi: 10.1117/12.470513
Proc. SPIE 4646, Spatially resolved polarization and temperature dynamics in quantum-well vertical-cavity surface emitters: a mesoscopic approach, 0000 (12 June 2002); doi: 10.1117/12.470514
Proc. SPIE 4646, Simulating the effect of spatial hole burning on the modulation responses of VCSELs, 0000 (12 June 2002); doi: 10.1117/12.470515
Proc. SPIE 4646, Transmission measurement of quality factor in two-dimensional photonic-crystal microcavity, 0000 (12 June 2002); doi: 10.1117/12.470516
Nonlinear Dynamics in VCSELs
Proc. SPIE 4646, Intensity and polarization self-pulsations in VCSELs, 0000 (12 June 2002); doi: 10.1117/12.470517
Proc. SPIE 4646, Nonlinear dynamics of current-modulated multitransverse-mode vertical-cavity surface-emitting lasers, 0000 (12 June 2002); doi: 10.1117/12.470518
Proc. SPIE 4646, Vectorial chaos synchronization and polarization encoding in self-pulsating VCSELs, 0000 (12 June 2002); doi: 10.1117/12.470519
Proc. SPIE 4646, Transverse-mode dynamics of vertical-cavity surface-emitting lasers subject to polarized optical injection, 0000 (12 June 2002); doi: 10.1117/12.470520
Proc. SPIE 4646, New photon density rate equation for Fabry-Perot semiconductor optical amplifiers (FP SOAs), 0000 (12 June 2002); doi: 10.1117/12.470522
Quantum Well Physics
Proc. SPIE 4646, Gain and photoluminescence in semiconductor lasers, 0000 (12 June 2002); doi: 10.1117/12.470523
Proc. SPIE 4646, Operator ordering of a position-dependent effective-mass Hamiltonian in lattice-matched semiconductor superlattices and quantum wells, 0000 (12 June 2002); doi: 10.1117/12.470524
Proc. SPIE 4646, Superlattice physics of digitally grown epitaxial InAlGaAs layers, 0000 (12 June 2002); doi: 10.1117/12.470525
Proc. SPIE 4646, Determination of subband energy levels from self-excited Raman scattering in compressively strained InGaAs/GaAs quantum well lasers, 0000 (12 June 2002); doi: 10.1117/12.470526
Physics and Simulation of Quantum Well Lasers
Proc. SPIE 4646, Carrier capture times in 1.3-micron materials: GaInNAs, InGaAsP, and InGaAlAs semiconductor quantum well lasers, 0000 (12 June 2002); doi: 10.1117/12.470527
Proc. SPIE 4646, Static and dynamic effects of lateral carrier diffusion in semiconductor lasers, 0000 (12 June 2002); doi: 10.1117/12.470528
Proc. SPIE 4646, Analysis temperature characteristics of highly strained InGaAs-GaAsP-GaAs (I>1.17 mm) quantum well lasers, 0000 (12 June 2002); doi: 10.1117/12.470529
Proc. SPIE 4646, Simulation of temperature-dependent modulation response in multi-quantum-well lasers, 0000 (12 June 2002); doi: 10.1117/12.470530
Proc. SPIE 4646, Theory of enhanced laser linewidth in semiconductor lasers with a phase-sensitive treatment of the Fabry-Perot, 0000 (12 June 2002); doi: 10.1117/12.470532
High-Power Diode Lasers
Proc. SPIE 4646, Current profiling in broad-area semiconductor lasers, 0000 (12 June 2002); doi: 10.1117/12.470533
Proc. SPIE 4646, Measurement of gain spectra, refractive index shift, and linewidth enhancement factor in Al-free 980-nm lasers with broadened waveguide, 0000 (12 June 2002); doi: 10.1117/12.470534
Proc. SPIE 4646, Self-consistent electrical, thermal, and optical model of high-brightness tapered lasers, 0000 (12 June 2002); doi: 10.1117/12.470535
Laterally Coupled Twin Stripe Diode Lasers
Proc. SPIE 4646, Fabrication and characterization of laterally coupled lasers, 0000 (12 June 2002); doi: 10.1117/12.470536
Proc. SPIE 4646, Modal properties of twin ridge laser diodes, 0000 (12 June 2002); doi: 10.1117/12.470537
Proc. SPIE 4646, Considerations on the rate equation description of a twin stripe laser array, 0000 (12 June 2002); doi: 10.1117/12.470538
Proc. SPIE 4646, Role of longitudinal mode dynamics in laterally coupled lasers, 0000 (12 June 2002); doi: 10.1117/12.470539
Proc. SPIE 4646, Spatio-temporal study of controlled high-speed modulation in two laterally coupled lasers (TLCL), 0000 (12 June 2002); doi: 10.1117/12.470540
Proc. SPIE 4646, Experimental and theoretical study of the frequency response of laterally coupled diode lasers, 0000 (12 June 2002); doi: 10.1117/12.470542
Nonlinear Dynamics in Diode Lasers with Optical Feedback
Proc. SPIE 4646, Dynamics of power distribution in multimode semiconductor lasers with optical feedback, 0000 (12 June 2002); doi: 10.1117/12.470543
Proc. SPIE 4646, Excitability of a DFB laser with short external cavity, 0000 (12 June 2002); doi: 10.1117/12.470544
Proc. SPIE 4646, Mixed-mode dynamics in a semiconductor laser with two optical feedbacks, 0000 (12 June 2002); doi: 10.1117/12.470545
Proc. SPIE 4646, Semiconductor laser with simultaneous tunable dual-wavelength emission, 0000 (12 June 2002); doi: 10.1117/12.470546
Proc. SPIE 4646, Simulations of a semiconductor laser with filtered optical feedback: deterministic dynamics and transitions to chaos, 0000 (12 June 2002); doi: 10.1117/12.470547
Proc. SPIE 4646, Routes to chaos in a semiconductor laser subject to phase-conjugate optical feedback, 0000 (12 June 2002); doi: 10.1117/12.470548
Nonlinear Dynamics and Chaos in Optically Injected Diode Lasers
Proc. SPIE 4646, Chirp reduction and bandwidth enhancement for direct current modulation in an optically injected semiconductor laser, 0000 (12 June 2002); doi: 10.1117/12.470549
Proc. SPIE 4646, Complex dynamics of an optically injected semiconductor laser: bifurcation theory and experiment, 0000 (12 June 2002); doi: 10.1117/12.470550
Proc. SPIE 4646, Dynamical entrainment of unidirectionally coupled single-mode diode lasers, 0000 (12 June 2002); doi: 10.1117/12.470551
Chaotic Synchronization
Proc. SPIE 4646, Influence of laser coupling configuration on chaotic synchronization, 0000 (12 June 2002); doi: 10.1117/12.470552
Proc. SPIE 4646, Comparison of two types of synchronization of unidirectionally coupled external-cavity semiconductor lasers, 0000 (12 June 2002); doi: 10.1117/12.470553
Proc. SPIE 4646, Theoretical analysis of synchronization of chaotic self-pulsating semiconductor lasers, 0000 (12 June 2002); doi: 10.1117/12.470554
Proc. SPIE 4646, Chaotic synchronization of injection-locked semiconductor lasers with bandwidth broadening, 0000 (12 June 2002); doi: 10.1117/12.470555
Chaotic Communication