PROCEEDINGS VOLUME 4651
SYMPOSIUM ON INTEGRATED OPTOELECTRONIC DEVICES | 19-25 JANUARY 2002
Novel In-Plane Semiconductor Lasers
SYMPOSIUM ON INTEGRATED OPTOELECTRONIC DEVICES
19-25 January 2002
San Jose, California, United States
Visible and Nitride Lasers
Proc. SPIE 4651, Gain characteristics of GaInP quantum well laser structures, 0000 (22 May 2002); doi: 10.1117/12.467933
Proc. SPIE 4651, Gain and carrier-induced refractive index change in group-III nitride quantum wells, 0000 (22 May 2002); doi: 10.1117/12.467943
Proc. SPIE 4651, High-power 400-nm AlGaInN/650-nm AlGaInP semiconductor lasers, 0000 (22 May 2002); doi: 10.1117/12.467960
Arsenide/Nitrides for Telecom
Proc. SPIE 4651, Low-threshold GaInNAsSb quantum well lasers, 0000 (22 May 2002); doi: 10.1117/12.467962
Proc. SPIE 4651, Group III-arsenide-nitride quantum well structures on GaAs for laser diodes emitting at 1.3 um, 0000 (22 May 2002); doi: 10.1117/12.467963
Proc. SPIE 4651, High-efficiency multiple-quantum-well GaInNAs/GaNAs ridge-waveguide diode lasers, 0000 (22 May 2002); doi: 10.1117/12.467964
Near-IR Diode Lasers
Proc. SPIE 4651, 100-mW high-power three-section tunable distributed Bragg reflector laser diodes with a real refractive-index-guided self-aligned structure, 0000 (22 May 2002); doi: 10.1117/12.467965
Proc. SPIE 4651, Tunable picosecond pulses from gain-switched grating-coupled surface-emitting laser, 0000 (22 May 2002); doi: 10.1117/12.467966
Proc. SPIE 4651, Generation of high-power pulses in the GHz range with three-section DBR lasers, 0000 (22 May 2002); doi: 10.1117/12.467934
Proc. SPIE 4651, High-brightness diode lasers with high d/gamma ratio obtained in asymmetric epitaxial strutures, 0000 (22 May 2002); doi: 10.1117/12.467935
Proc. SPIE 4651, High-power and high-brightness laser diode structures at 980 nm using Al-free materials, 0000 (22 May 2002); doi: 10.1117/12.467936
Telecom Lasers and SOAs
Proc. SPIE 4651, High-power 1300-nm Fabry-Perot and DFB ridge-waveguide lasers, 0000 (22 May 2002); doi: 10.1117/12.467937
Proc. SPIE 4651, Frequency-stable semiconductor laser for DWDM, 0000 (22 May 2002); doi: 10.1117/12.467938
Proc. SPIE 4651, Wide-wavelength control by selective MOVPE and its applications to DFB-LD array for CWDM, 0000 (22 May 2002); doi: 10.1117/12.467939
Proc. SPIE 4651, High-output-power polarization-insensitive SOA, 0000 (22 May 2002); doi: 10.1117/12.467940
Proc. SPIE 4651, Reducing temperature dependence of semiconductor lasers using nonidentical multiple quantum wells, 0000 (22 May 2002); doi: 10.1117/12.467941
Mid-IR I
Proc. SPIE 4651, Quantum cascade lasers and metal waveguides at lambda > 20 m, 0000 (22 May 2002); doi: 10.1117/12.467942
Proc. SPIE 4651, Recent developments in the applications of mid-infrared lasers, LEDs, and other solid state sources to gas detection, 0000 (22 May 2002); doi: 10.1117/12.467944
Proc. SPIE 4651, Physics and applications of III-Sb-based type-I QW diode lasers, 0000 (22 May 2002); doi: 10.1117/12.467945
Mid-IR II
Proc. SPIE 4651, Optical gain and loss in 3-um diode W lasers, 0000 (22 May 2002); doi: 10.1117/12.467946
Proc. SPIE 4651, Type-II diode lasers based on interface recombination at 3.3um, 0000 (22 May 2002); doi: 10.1117/12.467947
Proc. SPIE 4651, Novel hybrid III-V/II-VI mid-infrared laser structures with high asymmetric band offset confinements, 0000 (22 May 2002); doi: 10.1117/12.467948
Photonic Crystal Lasers
Proc. SPIE 4651, Photonic crystal defect lasers, 0000 (22 May 2002); doi: 10.1117/12.467949
Proc. SPIE 4651, Two-dimensional photonic crystal lasers, 0000 (22 May 2002); doi: 10.1117/12.467950
Proc. SPIE 4651, Active photonic lattices for high-coherent-power generation, 0000 (22 May 2002); doi: 10.1117/12.467951
Proc. SPIE 4651, Mid-infrared photonic-crystal distributed-feedback lasers with improved spectral and far-field characteristics, 0000 (22 May 2002); doi: 10.1117/12.467952
Theory and Novel Devices
Proc. SPIE 4651, Achieving spatial coherence in broad-area lasers using transverse-gain tailoring techniques, 0000 (22 May 2002); doi: 10.1117/12.467953
Proc. SPIE 4651, Diode laser modules of highest brilliance for materials processing, 0000 (22 May 2002); doi: 10.1117/12.467954
Proc. SPIE 4651, Influence of intraband relaxation processes on threshold and power-current characteristics of semiconductor lasers, 0000 (22 May 2002); doi: 10.1117/12.467955
Proc. SPIE 4651, Current-induced cooling of quantum systems, 0000 (22 May 2002); doi: 10.1117/12.467956
Mid-IR Quantum Cascade
Proc. SPIE 4651, High-performance quantum cascade lasers: physics and applications, 0000 (22 May 2002); doi: 10.1117/12.467957
Proc. SPIE 4651, Quantum cascade lasers with a heterogeneous cascade: two- and multiple-wavelength operation, 0000 (22 May 2002); doi: 10.1117/12.467958
Quantum Dot Lasers
Proc. SPIE 4651, 980-nm quantum dot lasers for high-power applications, 0000 (22 May 2002); doi: 10.1117/12.467959
Telecom Lasers and SOAs
Proc. SPIE 4651, High-performance 1.32-um GaInNAs/GaAs single-quantum-well lasers grown by molecular beam epitaxy, 0000 (22 May 2002); doi: 10.1117/12.467961
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