PROCEEDINGS VOLUME 4688
SPIE'S 27TH ANNUAL INTERNATIONAL SYMPOSIUM ON MICROLITHOGRAPHY | 3-8 MARCH 2002
Emerging Lithographic Technologies VI
SPIE'S 27TH ANNUAL INTERNATIONAL SYMPOSIUM ON MICROLITHOGRAPHY
3-8 March 2002
Santa Clara, California, United States
Plenary Session
Proc. SPIE 4688, Worldwide technologies and the ITRS in the current economic climate, 0000 (1 July 2002); doi: 10.1117/12.472265
Proc. SPIE 4688, NGL process and the role of International SEMATECH, 0000 (1 July 2002); doi: 10.1117/12.472289
Proc. SPIE 4688, Fabrication challenges for next-generation devices: MEMS for rf wireless communications, 0000 (1 July 2002); doi: 10.1117/12.472298
EUV Overview
Proc. SPIE 4688, EXTATIC: ASML's alpha-tool development for EUVL, 0000 (1 July 2002); doi: 10.1117/12.472308
EUV Sources
Proc. SPIE 4688, Xenon target performance characteristics for laser-produced plasma EUV sources, 0000 (1 July 2002); doi: 10.1117/12.472266
Proc. SPIE 4688, Status of the liquid-xenon-jet laser-plasma source for EUV lithography, 0000 (1 July 2002); doi: 10.1117/12.472274
Proc. SPIE 4688, Power scale-up of the extreme-ultraviolet electric capillary discharge source, 0000 (1 July 2002); doi: 10.1117/12.472282
Proc. SPIE 4688, High-power EUV sources for lithography: a comparison of laser-produced plasma and gas-discharge-produced plasma, 0000 (1 July 2002); doi: 10.1117/12.472283
EUV Masks I
Proc. SPIE 4688, EUVL masks: requirements and potential solutions, 0000 (1 July 2002); doi: 10.1117/12.472284
Proc. SPIE 4688, Impact of EUVL mask buffer and absorber material properties on mask quality and performance, 0000 (1 July 2002); doi: 10.1117/12.472285
Proc. SPIE 4688, Status of fabrication of square-format masks for extreme-ultraviolet lithography (EUVL) at the MCoC, 0000 (1 July 2002); doi: 10.1117/12.472286
Proc. SPIE 4688, Advances in low-defect multilayers for EUVL mask blanks, 0000 (1 July 2002); doi: 10.1117/12.472287
Proc. SPIE 4688, Verification studies of thermophoretic protection for EUV masks, 0000 (1 July 2002); doi: 10.1117/12.472288
Proc. SPIE 4688, Mechanical modeling of the reticle and chuck for EUV lithography, 0000 (1 July 2002); doi: 10.1117/12.472290
Nanoimprint Lithography
Proc. SPIE 4688, High-resolution templates for step and flash imprint lithography, 0000 (1 July 2002); doi: 10.1117/12.472293
Proc. SPIE 4688, Complete system of nanoimprint lithography for IC production, 0000 (1 July 2002); doi: 10.1117/12.472294
Proc. SPIE 4688, Low-temperature wafer-scale warm embossing for mix and match with UV lithography, 0000 (1 July 2002); doi: 10.1117/12.472295
Proc. SPIE 4688, Performance of 4-in. wafer-scale thermoset working stamps in hot embossing lithography, 0000 (1 July 2002); doi: 10.1117/12.472296
Micro- and Nanodevice Technologies
Proc. SPIE 4688, Roll-to-roll manufacturing of thin film electronics, 0000 (1 July 2002); doi: 10.1117/12.472297
Proc. SPIE 4688, Three-dimensional metrology in MEMS applications, 0000 (1 July 2002); doi: 10.1117/12.472299
EUV Systems Development
Proc. SPIE 4688, Pattern printability for off-axis incident light in EUV lithography, 0000 (1 July 2002); doi: 10.1117/12.472301
Proc. SPIE 4688, Impact of EUV light scatter on CD control as a result of mask density changes, 0000 (1 July 2002); doi: 10.1117/12.472302
Proc. SPIE 4688, High-power laser-produced-plasma EUV source, 0000 (1 July 2002); doi: 10.1117/12.472303
Proc. SPIE 4688, Environmental data from the engineering test stand, 0000 (1 July 2002); doi: 10.1117/12.472304
EUV Optics Metrololgy
Proc. SPIE 4688, 100-picometer interferometry for EUVL, 0000 (1 July 2002); doi: 10.1117/12.472305
Proc. SPIE 4688, Honing the accuracy of extreme-ultraviolet optical system testing: at-wavelength and visible-light measurements of the ETS Set-2 projection optic, 0000 (1 July 2002); doi: 10.1117/12.472306
Proc. SPIE 4688, New PTB reflectometer for the characterization of large optics for the extreme ultraviolet spectral region, 0000 (1 July 2002); doi: 10.1117/12.472307
Proc. SPIE 4688, First results from the updated NIST/DARPA EUV reflectometry facility, 0000 (1 July 2002); doi: 10.1117/12.472309
Proc. SPIE 4688, Development of diagnostic tools for the EUV spectral range, 0000 (1 July 2002); doi: 10.1117/12.472310
EUV Mask Inspection and Repair
Proc. SPIE 4688, Inspection of EUV reticles, 0000 (1 July 2002); doi: 10.1117/12.472311
Proc. SPIE 4688, Damage-free mask repair using electron-beam-induced chemical reactions, 0000 (1 July 2002); doi: 10.1117/12.472312
Proc. SPIE 4688, EUVL mask blank repair, 0000 (1 July 2002); doi: 10.1117/12.472313
Proc. SPIE 4688, At-wavelength inspection of defect smoothing in EUVL masks, 0000 (1 July 2002); doi: 10.1117/12.472314
Emerging Resist Technologies
Proc. SPIE 4688, REAP (raster e-beam advanced process) using 50-kV raster e-beam system for sub-100-nm node mask technology, 0000 (1 July 2002); doi: 10.1117/12.472315
Proc. SPIE 4688, EUV photoresist performance results from the VNL and the EUV LLC, 0000 (1 July 2002); doi: 10.1117/12.472316
Proc. SPIE 4688, Direct photopatterning of metal oxide materials using photosensitive organometallic precursor films, 0000 (1 July 2002); doi: 10.1117/12.472317
Contamination Issues in Lithography
Proc. SPIE 4688, Studies of EUV contamination mitigation, 0000 (1 July 2002); doi: 10.1117/12.472319
Proc. SPIE 4688, Controlling contamination in Mo/Si multilayer mirrors by Si surface capping modifications, 0000 (1 July 2002); doi: 10.1117/12.472320
EUV Mask Materials and Structures
Proc. SPIE 4688, Characterization and characteristics of a ULE glass tailored for EUVL needs, 0000 (1 July 2002); doi: 10.1117/12.472321
Proc. SPIE 4688, Thermal expansion behavior of proposed EUVL substrate materials, 0000 (1 July 2002); doi: 10.1117/12.472322
Proc. SPIE 4688, Ultrahigh-accuracy measurement of the coefficient of thermal expansion for ultralow expansion materials, 0000 (1 July 2002); doi: 10.1117/12.472323
Proc. SPIE 4688, Novel design of att-PSM structure for extreme-ultraviolet lithography and enhancement of image contrast during inspection, 0000 (1 July 2002); doi: 10.1117/12.472324
Proc. SPIE 4688, EUV phase-shifting masks and aberration monitors, 0000 (1 July 2002); doi: 10.1117/12.472325
EUV Multilayer Coatings
Proc. SPIE 4688, Ion beam sputter deposition of low-defect EUV mask blanks on 6-in. LTEM substrates in a real production environment, 0000 (1 July 2002); doi: 10.1117/12.472326
Proc. SPIE 4688, Design and fabrication of broadband EUV multilayer mirrors, 0000 (1 July 2002); doi: 10.1117/12.472327
Proc. SPIE 4688, Effect of argon and non-argon ion impingement on the stress reduction of multilayers for extreme-ultraviolet lithography, 0000 (1 July 2002); doi: 10.1117/12.472329
Electron Projection Lithography
Proc. SPIE 4688, Nikon EPL tool development summary, 0000 (1 July 2002); doi: 10.1117/12.472330
Poster Session
Proc. SPIE 4688, Advanced deflector elements for high-throughput electron optical systems, 0000 (1 July 2002); doi: 10.1117/12.472332
Electron Projection Lithography
Proc. SPIE 4688, Analysis of critical parameters for EPL mask fabrication, 0000 (1 July 2002); doi: 10.1117/12.472333
Direct Write Lithographies
Proc. SPIE 4688, Lossless compression techniques for maskless lithography data, 0000 (1 July 2002); doi: 10.1117/12.472334
Proc. SPIE 4688, Shaped e-beam lithography integration work for advanced ASIC manufacturing: progress report, 0000 (1 July 2002); doi: 10.1117/12.472335