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Novel polychromatic measurement technique for determining the dissolution rate of very thin resist films
Optimization of overlay markers to limit the measurement error induced during exposure by lens aberration effects
Comparison of measured optical image profiles of silicon lines with two different theoretical models
Exploring the resolution limits of phase-shift mask lithography with a very high numerical aperture ArF step-and-scan system
Characterizing post-exposure bake processing for transient- and steady-state conditions in the context of critical dimension control
Structural characterizaton of deep-submicron lithographic structures using small-angle neutron scattering