PROCEEDINGS VOLUME 4689
SPIE'S 27TH ANNUAL INTERNATIONAL SYMPOSIUM ON MICROLITHOGRAPHY | 3-8 MARCH 2002
Metrology, Inspection, and Process Control for Microlithography XVI
SPIE'S 27TH ANNUAL INTERNATIONAL SYMPOSIUM ON MICROLITHOGRAPHY
3-8 March 2002
Santa Clara, California, United States
Defect Analysis I
Proc. SPIE 4689, Future of e-beam metrology: obstacles and opportunities, 0000 (16 July 2002); doi: 10.1117/12.473408
Proc. SPIE 4689, Three-dimensional modeling of wafer inspection schemes for sub-70-nm lithography, 0000 (16 July 2002); doi: 10.1117/12.473455
Proc. SPIE 4689, Defect printability analysis study using virtual stepper system in a production environment, 0000 (16 July 2002); doi: 10.1117/12.473465
Proc. SPIE 4689, DUV optical metrology for the 90-nm node, CD linearity, contacts, and corner rounding, 0000 (16 July 2002); doi: 10.1117/12.473474
Proc. SPIE 4689, Contamination inspection of embedded phase-shift masks, 0000 (16 July 2002); doi: 10.1117/12.473485
New Tools and AFM-Related Metrology
Critical Dimension Metrology I
Proc. SPIE 4689, 193-nm CD shrinkage under SEM: modeling the mechanism, 0000 (16 July 2002); doi: 10.1117/12.473436
Proc. SPIE 4689, Benchmarking of advanced CD-SEMs at the 130-nm CMOS technology node, 0000 (16 July 2002); doi: 10.1117/12.473444
Proc. SPIE 4689, CD reference materials for sub-10th um applications, 0000 (16 July 2002); doi: 10.1117/12.473450
Poster Session
Proc. SPIE 4689, Determination of DICD best focus by top-down CD-SEM, 0000 (16 July 2002); doi: 10.1117/12.473451
Critical Dimension Metrology I
Proc. SPIE 4689, Quantitative profile-shape measurement study on a CD-SEM with application to etch-bias control, 0000 (16 July 2002); doi: 10.1117/12.473452
Scatterometry
Proc. SPIE 4689, Mathematical analyses of inverse scatterometry, 0000 (16 July 2002); doi: 10.1117/12.473453
Poster Session
Proc. SPIE 4689, Feature shape variation using scatterometry, 0000 (16 July 2002); doi: 10.1117/12.473454
Scatterometry
Proc. SPIE 4689, Scatterometry: interpretation by different methods of electromagnetic simulation, 0000 (16 July 2002); doi: 10.1117/12.473456
Proc. SPIE 4689, Spectral scatterometry for 2D trench metrology of low-K dual-damascene interconnect, 0000 (16 July 2002); doi: 10.1117/12.473457
Proc. SPIE 4689, Complementary use of scatterometry and SEM for photoresist profile and CD determination, 0000 (16 July 2002); doi: 10.1117/12.473458
Materials-Related Metrology
Overlay and Registrating Metrology I
Proc. SPIE 4689, Combined level-to-level and within-level overlay control, 0000 (16 July 2002); doi: 10.1117/12.473463
Proc. SPIE 4689, Overlay tool comparison for sub-130-nm technologies, 0000 (16 July 2002); doi: 10.1117/12.473464
Proc. SPIE 4689, Overlay accuracy: a metal layer study, 0000 (16 July 2002); doi: 10.1117/12.473466
Proc. SPIE 4689, Influence of coma effect on scanner overlay, 0000 (16 July 2002); doi: 10.1117/12.473467
Proc. SPIE 4689, Evaluation of ASML ATHENA alignment system on Intel front-end processes, 0000 (16 July 2002); doi: 10.1117/12.473468
Proc. SPIE 4689, Overlay metrology simulations, 0000 (16 July 2002); doi: 10.1117/12.473469
Critical Dimension Metrology II
Proc. SPIE 4689, Scanning electron microscope analog of scatterometry, 0000 (16 July 2002); doi: 10.1117/12.473470
Proc. SPIE 4689, Toward traceability for at-line AFM dimensional metrology, 0000 (16 July 2002); doi: 10.1117/12.473471
Proc. SPIE 4689, Evaluating the resolution of a CD-SEM, 0000 (16 July 2002); doi: 10.1117/12.473472
Proc. SPIE 4689, Amplitude and spatial frequency characterization of line-edge roughness using CD-SEM, 0000 (16 July 2002); doi: 10.1117/12.473473
Overlay and Registrating Metrology II
Proc. SPIE 4689, Ultrafast wafer alignment simulation based on thin film theory, 0000 (16 July 2002); doi: 10.1117/12.473475
Proc. SPIE 4689, Optimization of overlay markers to limit the measurement error induced during exposure by lens aberration effects, 0000 (16 July 2002); doi: 10.1117/12.473476
Proc. SPIE 4689, Overlay accuracy in 0.18-micron copper dual-damascene process, 0000 (16 July 2002); doi: 10.1117/12.473477
Proc. SPIE 4689, Advances in process overlay: ATHENA alignment system performance on critical process layers, 0000 (16 July 2002); doi: 10.1117/12.473478
Proc. SPIE 4689, Comparison of measured optical image profiles of silicon lines with two different theoretical models, 0000 (16 July 2002); doi: 10.1117/12.473479
Mask-Related Metrology
Process Control and Characterization
Proc. SPIE 4689, Improving sub-150-nm lithography and etch CD-SEM correlations to AFM and electrical test, 0000 (16 July 2002); doi: 10.1117/12.473486
Proc. SPIE 4689, Lithographic process window analysis by statistical means, 0000 (16 July 2002); doi: 10.1117/12.473487
Proc. SPIE 4689, New AFM imaging for an in-line LSI process monitor, 0000 (16 July 2002); doi: 10.1117/12.473488
Proc. SPIE 4689, Quantification of OPC performance of 150-nm gates using top-down CD-SEM, 0000 (16 July 2002); doi: 10.1117/12.473489
Proc. SPIE 4689, Novel implementations of scatterometry for lithography process control, 0000 (16 July 2002); doi: 10.1117/12.473490
Proc. SPIE 4689, Characterizing post-exposure bake processing for transient- and steady-state conditions, in the context of critical dimension control, 0000 (16 July 2002); doi: 10.1117/12.473491
Joint Session I: Process Control and Characterization
Proc. SPIE 4689, Productivity enhancements in recipe creation for overlay metrology measurements, 0000 (16 July 2002); doi: 10.1117/12.473492
Proc. SPIE 4689, Structural characterizaton of deep-submicron lithographic structures using small-angle neutron scattering, 0000 (16 July 2002); doi: 10.1117/12.473493
Joint Session II: Defect Data Analysis
Proc. SPIE 4689, Application of intentional defect arrays for assessing wafer inspection tool capabilities, 0000 (16 July 2002); doi: 10.1117/12.473494
Proc. SPIE 4689, 100-nm-pitch standard characterization for metrology applications, 0000 (16 July 2002); doi: 10.1117/12.473495
Joint Session III: Wafer Inspection
Proc. SPIE 4689, Simulation of imaging in projection microscope using multi-beam probe, 0000 (16 July 2002); doi: 10.1117/12.473497
Proc. SPIE 4689, Low-voltage-point source microscope for interferometry, 0000 (16 July 2002); doi: 10.1117/12.473498
Proc. SPIE 4689, Advanced inspection technique for deep-submicron and high-aspect-ratio contact holes, 0000 (16 July 2002); doi: 10.1117/12.473499