PROCEEDINGS VOLUME 4690
SPIE'S 27TH ANNUAL INTERNATIONAL SYMPOSIUM ON MICROLITHOGRAPHY | 3-8 MARCH 2002
Advances in Resist Technology and Processing XIX
SPIE'S 27TH ANNUAL INTERNATIONAL SYMPOSIUM ON MICROLITHOGRAPHY
3-8 March 2002
Santa Clara, California, United States
Resist Imaging
Proc. SPIE 4690, Photoresists for microlithography, or The Red Queen's Race, 0000 (24 July 2002); doi: 10.1117/12.474159
Proc. SPIE 4690, Patterning biomolecules and cells: an upside-down microlithography, 0000 (24 July 2002); doi: 10.1117/12.474213
157 nm Resist Materials I
Proc. SPIE 4690, Aliphatic platforms for the design of 157-nm chemically amplified resists, 0000 (24 July 2002); doi: 10.1117/12.474223
Proc. SPIE 4690, High-resolution fluorocarbon-based resist for 157-nm lithography, 0000 (24 July 2002); doi: 10.1117/12.474234
Proc. SPIE 4690, Novel fluoro copolymers for 157-nm photoresists: a progress report, 0000 (24 July 2002); doi: 10.1117/12.474252
157 nm Resist Materials II
Proc. SPIE 4690, Factors influencing the properties of fluoropolymer-based resists for 157-nm lithography, 0000 (24 July 2002); doi: 10.1117/12.474261
Proc. SPIE 4690, Advances in resists for 157-nm microlithography, 0000 (24 July 2002); doi: 10.1117/12.474272
Proc. SPIE 4690, Synthesis of novel fluoropolymers for 157-nm photoresists by cyclopolymerization, 0000 (24 July 2002); doi: 10.1117/12.474160
Proc. SPIE 4690, Highly transparent resist platforms for 157-nm microlithography: an update, 0000 (24 July 2002); doi: 10.1117/12.474169
Proc. SPIE 4690, Negative photoresist for 157-nm microlithography; a progress report, 0000 (24 July 2002); doi: 10.1117/12.474187
193 nm Resist Materials
Proc. SPIE 4690, Cycloolefin/cyanoacrylate (COCA) copolymers for 193-nm and 157-nm lithography, 0000 (24 July 2002); doi: 10.1117/12.474196
Proc. SPIE 4690, Novel alicyclic polymers having 7,7-dimethyloxepan-2-one acid labile groups for ArF lithography, 0000 (24 July 2002); doi: 10.1117/12.474206
Proc. SPIE 4690, New approach for 193-nm resist using modified cycloolefin resin, 0000 (24 July 2002); doi: 10.1117/12.474209
Proc. SPIE 4690, High-performance 193-nm resist composition using hybrid copolymers of cycloolefin/maleic anhydride (COMA)/methacrylate, 0000 (24 July 2002); doi: 10.1117/12.474210
Proc. SPIE 4690, Macrocycle monomer having ethyleneoxy unit to buffer acid diffusion (new base for photoresist), 0000 (24 July 2002); doi: 10.1117/12.474211
193 nm Resist Processing
Proc. SPIE 4690, Investigation of lithographic performance for 120-nm and sub-120-nm gate applications of advanced ArF resists based on VEMA co-polymers, 0000 (24 July 2002); doi: 10.1117/12.474212
Proc. SPIE 4690, Illumination, acid diffusion, and process optimization considerations for 193-nm contact hole resists, 0000 (24 July 2002); doi: 10.1117/12.474214
New Resist Materials
Proc. SPIE 4690, Characterization and acid diffusion measurements of new strong acid photoacid generators, 0000 (24 July 2002); doi: 10.1117/12.474215
Proc. SPIE 4690, Perflourosulfonyl imides and methides: investigating the lithographic potential of novel superacid PAGs, 0000 (24 July 2002); doi: 10.1117/12.474216
Proc. SPIE 4690, Transparency vs. efficiency in 193-nm photoacid generator design, 0000 (24 July 2002); doi: 10.1117/12.474217
157 nm Resist Processing
Proc. SPIE 4690, Fluoropolymer resists for 157-nm lithography, 0000 (24 July 2002); doi: 10.1117/12.474218
Proc. SPIE 4690, New 157-nm resist platform based on etching model for fluoropolymers, 0000 (24 July 2002); doi: 10.1117/12.474219
Proc. SPIE 4690, Amine gradient process for 157-nm lithography, 0000 (24 July 2002); doi: 10.1117/12.474220
Proc. SPIE 4690, Pattern transfer processes for 157-nm lithography, 0000 (24 July 2002); doi: 10.1117/12.474221
Resist Applications
Proc. SPIE 4690, Synthesis and characterization of photodefinable polycarbonates for use as sacrificial materials in the fabrication of microfluidic devices, 0000 (24 July 2002); doi: 10.1117/12.474222
Proc. SPIE 4690, Maleimide-based tetrapolymers for use in lift-off resists, 0000 (24 July 2002); doi: 10.1117/12.474224
Proc. SPIE 4690, Ultra-thick lithography for advanced packaging and MEMS, 0000 (24 July 2002); doi: 10.1117/12.474225
Proc. SPIE 4690, Integration of UTR processes into MPU IC manufacturing flows, 0000 (24 July 2002); doi: 10.1117/12.474226
Proc. SPIE 4690, Development and characterization of 193-nm ultra-thin resist process, 0000 (24 July 2002); doi: 10.1117/12.474227
Resist Fundamentals I
Proc. SPIE 4690, Characterization of the polymer-developer interface in 193-nm photoresist polymers and formulations during dissolution, 0000 (24 July 2002); doi: 10.1117/12.474228
Proc. SPIE 4690, Measurement of the spatial evolution of the deprotection reaction front with nanometer resolution using neutron reflectometry, 0000 (24 July 2002); doi: 10.1117/12.474229
Proc. SPIE 4690, Effect of humidity on deprotection kinetics in chemically amplified resists, 0000 (24 July 2002); doi: 10.1117/12.474230
Proc. SPIE 4690, Surface properties and topography of 193-nm resist after exposure and development, 0000 (24 July 2002); doi: 10.1117/12.474231
Proc. SPIE 4690, Chain conformation in ultrathin polymer films, 0000 (24 July 2002); doi: 10.1117/12.474232
Resist Fundamentals II
Proc. SPIE 4690, High numerical aperture: imaging implications for chemically amplified photoresists, 0000 (24 July 2002); doi: 10.1117/12.474233
Proc. SPIE 4690, Effects of image contrast and resist types upon line edge roughness (LER), 0000 (24 July 2002); doi: 10.1117/12.474235
Resist Simulation
Proc. SPIE 4690, Resist vector: connecting the aerial image to reality, 0000 (24 July 2002); doi: 10.1117/12.474236
Proc. SPIE 4690, Mesoscale simulation of positive tone chemically amplified photoresists, 0000 (24 July 2002); doi: 10.1117/12.474237
Bilayer Resists
Proc. SPIE 4690, Challenges of 50-nm gate process in alternating phase shifting lithography, 0000 (24 July 2002); doi: 10.1117/12.474238
Proc. SPIE 4690, Evolution of a 193-nm bilayer resist for manufacturing, 0000 (24 July 2002); doi: 10.1117/12.474239
Novel Resist Processing
Proc. SPIE 4690, Designing photoresist systems for CO2-based microlithography, 0000 (24 July 2002); doi: 10.1117/12.474240
Proc. SPIE 4690, Dissolution rate measurements for resist processing in supercritical carbon dioxide, 0000 (24 July 2002); doi: 10.1117/12.474241
Joint Session: Emerging Resist Technology
Proc. SPIE 4690, Applicaton of blends and side chain Si-O copolymers as high-etch-resistant sub-100-nm e-beam resists, 0000 (24 July 2002); doi: 10.1117/12.474242
Proc. SPIE 4690, Sensitivity factors of CAR electron-beam resists, 0000 (24 July 2002); doi: 10.1117/12.474243
Proc. SPIE 4690, Polysulfone-novolac resist for electron-beam lithography: II. effects of resist formulation and processing, 0000 (24 July 2002); doi: 10.1117/12.474244
Poster Session
Proc. SPIE 4690, Fluorinated dissolution inhibitors for 157-nm lithography, 0000 (24 July 2002); doi: 10.1117/12.474245
Proc. SPIE 4690, Dry-etch resistance of fluorine functionalized polymers, 0000 (24 July 2002); doi: 10.1117/12.474246
Proc. SPIE 4690, 157-nm single-layer resists based on advanced fluorinated polymers, 0000 (24 July 2002); doi: 10.1117/12.474247
Proc. SPIE 4690, Fluorocarbon-based single-layer resist for 157-nm lithography, 0000 (24 July 2002); doi: 10.1117/12.474248
157 nm Resist Processing
Proc. SPIE 4690, Ultrathin film imaging at 157 nm, 0000 (24 July 2002); doi: 10.1117/12.474249
Poster Session
Proc. SPIE 4690, Progress in 157-nm resist performance and potential, 0000 (24 July 2002); doi: 10.1117/12.474250
Proc. SPIE 4690, Investigation of a fluorinated ESCAP-based resist for 157-nm lithography, 0000 (24 July 2002); doi: 10.1117/12.474251
Proc. SPIE 4690, Implementation of the ArF resists based on VEMA for sub-100-nm device, 0000 (24 July 2002); doi: 10.1117/12.474253
Proc. SPIE 4690, Performance of vinyl ether cross-linkers on resist for 193-nm lithography, 0000 (24 July 2002); doi: 10.1117/12.474254