SPIE'S 27TH ANNUAL INTERNATIONAL SYMPOSIUM ON MICROLITHOGRAPHY
3-8 March 2002
Santa Clara, California, United States
Image Quality Assessment
Proc. SPIE 4691, High-NA lithographic imagery at Brewster's angle, 0000 (30 July 2002); doi: 10.1117/12.474473
Proc. SPIE 4691, Challenges in high NA, polarization, and photoresists, 0000 (30 July 2002); doi: 10.1117/12.474562
Proc. SPIE 4691, Simple estimation of lens aberration with pinhole aperture on the backside of photomask, 0000 (30 July 2002); doi: 10.1117/12.474580
Proc. SPIE 4691, Impact of Zernike cross-term on linewidth control, 0000 (30 July 2002); doi: 10.1117/12.474590
Proc. SPIE 4691, Flare and its impact on low-k1 KrF and ArF lithography, 0000 (30 July 2002); doi: 10.1117/12.474598
Proc. SPIE 4691, Effectiveness and confirmation of local area flare measurement method in various pattern layouts, 0000 (30 July 2002); doi: 10.1117/12.474608
DRAM and Maskless Lithography
Proc. SPIE 4691, Is model-based optical proximity correction ready for manufacturing? Study on 0.12- and 0.175-um DRAM technology, 0000 (30 July 2002); doi: 10.1117/12.474618
Proc. SPIE 4691, Patterning half-wavelength DRAM cell using chromelessp phase lithography (CPL), 0000 (30 July 2002); doi: 10.1117/12.474629
Proc. SPIE 4691, Introduction of full-level alternating phase-shift mask technology into IC manufacturing, 0000 (30 July 2002); doi: 10.1117/12.474639
Proc. SPIE 4691, Theoretical analysis of the potential for maskless lithography, 0000 (30 July 2002); doi: 10.1117/12.474474
Lithography Simulation and Analysis
Proc. SPIE 4691, Algorithmic implementations of domain decomposition methods for the diffraction simulation of advanced photomasks, 0000 (30 July 2002); doi: 10.1117/12.474483
Proc. SPIE 4691, 3D lumped parameter model for lithographic simulations, 0000 (30 July 2002); doi: 10.1117/12.474490
Proc. SPIE 4691, Illumination, mask, and tool effects on pattern and probe-based aberration monitors, 0000 (30 July 2002); doi: 10.1117/12.474500
Proc. SPIE 4691, OPC and image optimization using localized frequency analysis, 0000 (30 July 2002); doi: 10.1117/12.474509
Proc. SPIE 4691, LER as structural fluctuation of resist reaction and developer percolation, 0000 (30 July 2002); doi: 10.1117/12.474519
Proc. SPIE 4691, Quantification of image quality, 0000 (30 July 2002); doi: 10.1117/12.474529
OPC Techniques I
Proc. SPIE 4691, Contrast-based assist feature optimization, 0000 (30 July 2002); doi: 10.1117/12.474537
Proc. SPIE 4691, Advanced hybrid optical proximity correction system with OPC segment library and model-based correction module, 0000 (30 July 2002); doi: 10.1117/12.474546
Proc. SPIE 4691, Complex 2D pattern lithography at lambda/4 resolution using chromeless phase lithography (CPL), 0000 (30 July 2002); doi: 10.1117/12.474555
Proc. SPIE 4691, Model-based design improvements for the 100-nm lithography generation, 0000 (30 July 2002); doi: 10.1117/12.474563
Process Optimization and Control I
Proc. SPIE 4691, CD versu. pitch across the slit for multiple 248-nm step-and-scan exposure tools, 0000 (30 July 2002); doi: 10.1117/12.474571
Proc. SPIE 4691, Optimization of process condition to balance MEF and OPC for alternating PSM: control of forbidden pitches, 0000 (30 July 2002); doi: 10.1117/12.474573
Proc. SPIE 4691, Mask error tensor and causality of mask error enhancement for low-k1 imaging: theory and experiments, 0000 (30 July 2002); doi: 10.1117/12.474574
Proc. SPIE 4691, Subwavelength lithography: an impact of photo mask errors on circuit performance, 0000 (30 July 2002); doi: 10.1117/12.474575
Proc. SPIE 4691, Aerial image degradation effects due to imperfect sidewall profiles of EAPSM mask for 130-nm device node: 3D EMF simulations and wafer printing results, 0000 (30 July 2002); doi: 10.1117/12.474576
Process Optimization and Control II
Proc. SPIE 4691, CD control with effective exposure dose monitor technique in photolithography, 0000 (30 July 2002); doi: 10.1117/12.474577
Proc. SPIE 4691, New method to determine optimal photolithography process conditions using scatterometry, 0000 (30 July 2002); doi: 10.1117/12.474578
Proc. SPIE 4691, CD uniformity improvement by active scanner corrections, 0000 (30 July 2002); doi: 10.1117/12.474579
Proc. SPIE 4691, Analysis of focus errors in lithography using phase-shift monitors, 0000 (30 July 2002); doi: 10.1117/12.474581
Alternating PSM Implementation
Proc. SPIE 4691, New alternating phase-shifting mask conversion methodology using phase conflict resolution, 0000 (30 July 2002); doi: 10.1117/12.474582
Proc. SPIE 4691, Methodology for generating exposure tool specifications for alternating phase-shift mask application for 70-nm node, 0000 (30 July 2002); doi: 10.1117/12.474583
Proc. SPIE 4691, Through-pitch correction of scattering effects in 193-nm alternating phase-shift masks, 0000 (30 July 2002); doi: 10.1117/12.474584
Proc. SPIE 4691, Theoretical discussion on reduced aberration sensitivity of enhanced alternating phase-shifting masks, 0000 (30 July 2002); doi: 10.1117/12.474585
OPC Techniques II
Proc. SPIE 4691, Hybrid PPC methodology and implementation in the correction of etch proximity, 0000 (30 July 2002); doi: 10.1117/12.474586
Proc. SPIE 4691, Universal process modeling with VTRE for OPC, 0000 (30 July 2002); doi: 10.1117/12.474587
Proc. SPIE 4691, Assessment of OPC effectiveness using two-dimensional metrics, 0000 (30 July 2002); doi: 10.1117/12.474588
Proc. SPIE 4691, Model-assisted double dipole decomposition, 0000 (30 July 2002); doi: 10.1117/12.474589
Proc. SPIE 4691, Subresolution assist feature implementation for high-performance logic gate-level lithography, 0000 (30 July 2002); doi: 10.1117/12.474591
Additional Paper from Session 9
Proc. SPIE 4691, Model-based corrections for complementary phase-shift mask toward 70-nm technology node, 0000 (30 July 2002); doi: 10.1117/12.490520
Resolution Enhancement Techniques I
Proc. SPIE 4691, Minimization of image placement errors in chromeless phase-shift mask lithography, 0000 (30 July 2002); doi: 10.1117/12.474592
Proc. SPIE 4691, Polarization masks: concept and initial assessment, 0000 (30 July 2002); doi: 10.1117/12.474593
Proc. SPIE 4691, Extending KrF to 100-nm imaging with high-NA- and chromeless phase lithography technology, 0000 (30 July 2002); doi: 10.1117/12.474594
Resolution Enhancement Techniques II
Proc. SPIE 4691, Attainable road to the lower-k1 extension using high-transmittance attenuated phase-shifting mask in the KrF lithography world, 0000 (30 July 2002); doi: 10.1117/12.474595
Proc. SPIE 4691, Dipole decomposition mask design for full-chip implementation at 100-nm technology node and beyond, 0000 (30 July 2002); doi: 10.1117/12.474596
Proc. SPIE 4691, Complementary double-exposure technique (CODE): a way to print 80-nm gate level using a double-exposure binary mask approach, 0000 (30 July 2002); doi: 10.1117/12.474597
Proc. SPIE 4691, Development of a sub-100-nm integrated imaging system using chromeless phase-shifting imaging with very high NA KrF exposure and off-axis illumination, 0000 (30 July 2002); doi: 10.1117/12.474599
Mask-related Issues
Poster Session
Proc. SPIE 4691, Behavior of candidate organic pellicle materials under 157-nm laser irradiation, 0000 (30 July 2002); doi: 10.1117/12.474604
157-nm Lithography
Proc. SPIE 4691, 157-nm pellicles: polymer design for transparency and lifetime, 0000 (30 July 2002); doi: 10.1117/12.474605
Proc. SPIE 4691, 157-nm lithography with high numerical aperture lens for 70-nm technology node, 0000 (30 July 2002); doi: 10.1117/12.474606
Proc. SPIE 4691, Progress of Nikon's F2-exposure tool development, 0000 (30 July 2002); doi: 10.1117/12.474607
Proc. SPIE 4691, System design of a 157-nm scanner, 0000 (30 July 2002); doi: 10.1117/12.474609
Proc. SPIE 4691, 157-nm technology: Where are we today?, 0000 (30 July 2002); doi: 10.1117/12.474610