DESIGN, PROCESS INTEGRATION, AND CHARACTERIZATION FOR MICROELECTRONICS
7-8 March 2002
Santa Clara, CA, United States
Metrology for Process Characterization
Proc. SPIE 4692, Effect of metrology time delay on overlay APC, 0000 (12 July 2002); doi: 10.1117/12.475656
Proc. SPIE 4692, Profile parameter accuracy determined from scatterometric measurements, 0000 (12 July 2002); doi: 10.1117/12.475665
Wafer Inspection
Proc. SPIE 4692, 2001 metrology roadmap: process control through amplification and averaging microscopic changes, 0000 (12 July 2002); doi: 10.1117/12.475685
Proc. SPIE 4692, Prediction of light scattering from particles on a filmed surface using discrete-dipole approximation, 0000 (12 July 2002); doi: 10.1117/12.475698
Defect Data Analysis
Proc. SPIE 4692, Industry survey of automatic defect classification technologies, methods, and performance, 0000 (12 July 2002); doi: 10.1117/12.475640
Proc. SPIE 4692, Submicron particle identification by compositional defect review using Auger analysis, 0000 (12 July 2002); doi: 10.1117/12.475641
Proc. SPIE 4692, Detection of semiconductor defects using a novel fractal encoding algorithm, 0000 (12 July 2002); doi: 10.1117/12.475642
Proc. SPIE 4692, Automated residual metal inspection, 0000 (12 July 2002); doi: 10.1117/12.475643
Proc. SPIE 4692, Defect detection for short-loop process and SRAM-cell optimization by using addressable failure site-test structures (AFS-TS), 0000 (12 July 2002); doi: 10.1117/12.475644
Yield Improvement and Analysis
Proc. SPIE 4692, Evolving paradigm for fab revenue optimization, 0000 (12 July 2002); doi: 10.1117/12.475645
Proc. SPIE 4692, Methodology for defect impact studies under conditions of low sampling statistics, 0000 (12 July 2002); doi: 10.1117/12.475646
Proc. SPIE 4692, Isolating causes of yield excursions with decision tress and commonality, 0000 (12 July 2002); doi: 10.1117/12.475647
Proc. SPIE 4692, Using an image retrieval system for image data management, 0000 (12 July 2002); doi: 10.1117/12.475648
Proc. SPIE 4692, Wafer-level fault detection and classification on a photo track in a high volume fab, 0000 (12 July 2002); doi: 10.1117/12.475649
Process Control and Characterization
Proc. SPIE 4692, Meeting the challenges of process module and fab-wide active control for 300 mm, 130 nm, and beyond, 0000 (12 July 2002); doi: 10.1117/12.475650
Proc. SPIE 4692, Just-in-time adaptive disturbance estimation for run-to-run control of photolithography overlay, 0000 (12 July 2002); doi: 10.1117/12.475651
Proc. SPIE 4692, Common APC architecture for 200- and 300-mm etch, 0000 (12 July 2002); doi: 10.1117/12.475652
Poster Session
Proc. SPIE 4692, Microloading characterization of 300-mm etch and CMP tools, 0000 (12 July 2002); doi: 10.1117/12.475653
Proc. SPIE 4692, GOI characterization of 300-mm furnace tools, 0000 (12 July 2002); doi: 10.1117/12.475654
Proc. SPIE 4692, Thermo- and galvanomagnetic investigations of semiconductors at high pressure up to 30 GPa, 0000 (12 July 2002); doi: 10.1117/12.475655
Defect Data Analysis
Proc. SPIE 4692, SEM review and discrete inspection of optically invisible defects in a production environment, 0000 (12 July 2002); doi: 10.1117/12.475657
Proc. SPIE 4692, Defect topographic maps using a non-Lambertian photometric stereo method, 0000 (12 July 2002); doi: 10.1117/12.475658
Wafer Inspection
Proc. SPIE 4692, Nondestructive testing of damage layers in semiconductor materials by surface acoustic waves, 0000 (12 July 2002); doi: 10.1117/12.475660
Integration: Enabling the Future
Proc. SPIE 4692, Crossing the divide between lithography and chip design, 0000 (12 July 2002); doi: 10.1117/12.475661
Proc. SPIE 4692, Approaching the one billion transistor logic product: process and design challenges, 0000 (12 July 2002); doi: 10.1117/12.475662
Advance RETs for 70 nm
Proc. SPIE 4692, Enabling the 70-nm technology node with 193-nm altPSM lithography, 0000 (12 July 2002); doi: 10.1117/12.475663
Proc. SPIE 4692, Developing an integrated imaging system for the 70-nm node using high numerical aperture ArF lithography, 0000 (12 July 2002); doi: 10.1117/12.475664
Proc. SPIE 4692, Exposing the DUV SCAAM: 75-nm imaging on the cheap, 0000 (12 July 2002); doi: 10.1117/12.475666
Integration Methods II
Proc. SPIE 4692, GDS-3 initiative: advanced design-through-chip infrastructure for subwavelength technology, 0000 (12 July 2002); doi: 10.1117/12.475667
Design Rules and Design Validation
Proc. SPIE 4692, Model-based WYSIWYG: dimensional metrology infrastructure for design and integration, 0000 (12 July 2002); doi: 10.1117/12.475668
Proc. SPIE 4692, Chip-level line-width prediction methodology, 0000 (12 July 2002); doi: 10.1117/12.475669
Proc. SPIE 4692, Verifying RET mask layouts, 0000 (12 July 2002); doi: 10.1117/12.475670
Proc. SPIE 4692, IC yield prediction and analysis using semi-empirical yield models and test data, 0000 (12 July 2002); doi: 10.1117/12.475671
Design Validation and ACLV
Proc. SPIE 4692, New method for reducing across-chip poly-CD variation with statistical OPC/gauge capability analysis, 0000 (12 July 2002); doi: 10.1117/12.475672
Proc. SPIE 4692, Impact of subwavelength CD tolerance on device performance, 0000 (12 July 2002); doi: 10.1117/12.475673
Integration Methods I
Proc. SPIE 4692, Design-process integration and shared red bricks, 0000 (12 July 2002); doi: 10.1117/12.475674
Technology Models and CAD I
Proc. SPIE 4692, Relevance of TCAD to process-aware design, 0000 (12 July 2002); doi: 10.1117/12.475675
Proc. SPIE 4692, Improving device performance and process manufacturability through the use of TCAD, 0000 (12 July 2002); doi: 10.1117/12.475676
Proc. SPIE 4692, Monte-Carlo methods for chemical-mechanical planarization on multiple-layer and dual-material models, 0000 (12 July 2002); doi: 10.1117/12.475677
Proc. SPIE 4692, Infrastructure for model-based OPC development in the deep submicron era, 0000 (12 July 2002); doi: 10.1117/12.475678
Proc. SPIE 4692, Validation of the aberration-pattern-matching OPC strategy, 0000 (12 July 2002); doi: 10.1117/12.475679
Technology Models and CAD II
Proc. SPIE 4692, Characterizing the process window of a double-exposure dark-field alternating phase-shift mask, 0000 (12 July 2002); doi: 10.1117/12.475680
Proc. SPIE 4692, Symmetry enhancement method for process modeling and its applications in IC design and OPC, 0000 (12 July 2002); doi: 10.1117/12.475681
Proc. SPIE 4692, Role of mask acuity in advanced lithographic process design, 0000 (12 July 2002); doi: 10.1117/12.475682
Proc. SPIE 4692, Evolution and integration of optimal IC design: performance and manufacturing issues, 0000 (12 July 2002); doi: 10.1117/12.475683
Devices and Patterning
Proc. SPIE 4692, Highly manufacturable capacitor-less 1T-DRAM concept, 0000 (12 July 2002); doi: 10.1117/12.475684
Proc. SPIE 4692, Investigation of the physical and practical limits of dense-only phase-shift lithography for circuit feature definition, 0000 (12 July 2002); doi: 10.1117/12.475686
Proc. SPIE 4692, Exact computation of scalar 2D aerial imagery, 0000 (12 July 2002); doi: 10.1117/12.475687
Layouts and RETs
Proc. SPIE 4692, RET-compliant cell generation for sub-130-nm processes, 0000 (12 July 2002); doi: 10.1117/12.475688
Proc. SPIE 4692, Model-based OPC for sub-resolution assist feature enhanced layouts, 0000 (12 July 2002); doi: 10.1117/12.475689
Integration Methods II
Proc. SPIE 4692, Implications of tiling for performance and design flow, 0000 (12 July 2002); doi: 10.1117/12.475690
Proc. SPIE 4692, Adoption costs and hierarchy efficiency for 100 nm and beyond, 0000 (12 July 2002); doi: 10.1117/12.475691
Advance RETs for 70 nm
Proc. SPIE 4692, Development of a sub-100nm integrated imaging system using chromeless phase-shifting imaging with very high NA KrF exposure and off-axis illumination, 0000 (12 July 2002); doi: 10.1117/12.475692
Layouts and RETs
Proc. SPIE 4692, 248-nm photolithography compatibility on low-k dielectrics in BEOL interconnects, 0000 (12 July 2002); doi: 10.1117/12.475693
Design Validation and ACLV
Proc. SPIE 4692, Error budget for a 193-nm complementary phase-shift mask, 0000 (12 July 2002); doi: 10.1117/12.475694
Integration Methods II