PROCEEDINGS VOLUME 4754
PHOTOMASK AND NEXT GENERATION LITHOGRAPHY MASK TECHNOLOGY IX | 23-25 APRIL 2002
Photomask and Next-Generation Lithography Mask Technology IX
PHOTOMASK AND NEXT GENERATION LITHOGRAPHY MASK TECHNOLOGY IX
23-25 April 2002
Yokohama, Japan
Lithography Strategy and Mask Specifications
Proc. SPIE 4754, Lithography strategy for 65-nm node, 0000 (1 August 2002); doi: 10.1117/12.476916
Photomask Processes and Materials
Proc. SPIE 4754, Characteristics of negative-tone chemically amplified resist (MES-EN1G) for 50-keV EB mask writing system, 0000 (1 August 2002); doi: 10.1117/12.476936
Proc. SPIE 4754, Comparative evaluation of e-beam sensitive chemically amplified resists for mask making, 0000 (1 August 2002); doi: 10.1117/12.476944
Proc. SPIE 4754, Improvement of critical dimension stability of chemically amplified resist by overcoat, 0000 (1 August 2002); doi: 10.1117/12.476955
Proc. SPIE 4754, Advanced pattern correction method for fabricating highly accurate reticles, 0000 (1 August 2002); doi: 10.1117/12.476964
Dry Etching Techniques for Mask Materials
Proc. SPIE 4754, Improvements in MoSi EAPSM CD bias and iso-dense linearity plasma etch results utilizing design of experiments process optimization of Gen III ICP plasma source, 0000 (1 August 2002); doi: 10.1117/12.476973
Proc. SPIE 4754, Highly anisotropic etching of phase-shift masks using ICP of CF4-SF6-CHF3 gas mixtures, 0000 (1 August 2002); doi: 10.1117/12.476984
Proc. SPIE 4754, In-situ optical emission spectroscopic examination of chrome etch for photomasks, 0000 (1 August 2002); doi: 10.1117/12.476993
Lithography Strategy and Mask Specifications
Proc. SPIE 4754, Lithography technology trend for DRAM devices, 0000 (1 August 2002); doi: 10.1117/12.477003
Advanced PSM Techniques
Proc. SPIE 4754, Process of manufacturing and inspection of high-end (ternary) tritone EAPSM reticles for 0.13um design rule generation, 0000 (1 August 2002); doi: 10.1117/12.476924
Mask Data Preparation and Design Automation
Proc. SPIE 4754, Advanced data preparation and design automation, 0000 (1 August 2002); doi: 10.1117/12.476929
Proc. SPIE 4754, Generic hierarchical engine for mask data preparation, 0000 (1 August 2002); doi: 10.1117/12.476930
Proc. SPIE 4754, Investigating into mask contribution to device performance and chip functionality, 0000 (1 August 2002); doi: 10.1117/12.476931
Proc. SPIE 4754, Distributed hierarchical processing, 0000 (1 August 2002); doi: 10.1117/12.476932
Proc. SPIE 4754, High-performance hierarchical fracturing, 0000 (1 August 2002); doi: 10.1117/12.476933
Proc. SPIE 4754, Life is better without nonorthogonal or non-45-deg. edges: a practical solution to alleviate the pain on OPC and mask writing, 0000 (1 August 2002); doi: 10.1117/12.476934
Proc. SPIE 4754, Pattern recognition in the database of a mask layout, 0000 (1 August 2002); doi: 10.1117/12.476935
Proc. SPIE 4754, Design flow automation for variable-shaped beam pattern generators, 0000 (1 August 2002); doi: 10.1117/12.476937
Proc. SPIE 4754, Simulation method using the image filter method, 0000 (1 August 2002); doi: 10.1117/12.476938
Proc. SPIE 4754, Enriching design intent for optimal OPC and RET, 0000 (1 August 2002); doi: 10.1117/12.476939
Proc. SPIE 4754, Phase assignment for bright field of dense contact, 0000 (1 August 2002); doi: 10.1117/12.476940
Proc. SPIE 4754, Two-dimensional G-MEEF theory and applications, 0000 (1 August 2002); doi: 10.1117/12.476941
Proc. SPIE 4754, Template of specifications for assist feature script implementation, 0000 (1 August 2002); doi: 10.1117/12.476942
Photomask Processes and Materials
Proc. SPIE 4754, Fogging and pattern loading effect by writing strategy, 0000 (1 August 2002); doi: 10.1117/12.476943
Proc. SPIE 4754, NEGATIVE-CAR blanks feasibility study results for EB reticle fabrication beyond 100 nm node, 0000 (1 August 2002); doi: 10.1117/12.476945
Proc. SPIE 4754, Early mask results of KRS-XE and current progress in improving sensitivity and etch resistance, 0000 (1 August 2002); doi: 10.1117/12.476946
Proc. SPIE 4754, Comparison between positive and negative 50-k ev E-beam CAR for 0.1-um generation, 0000 (1 August 2002); doi: 10.1117/12.476947
Proc. SPIE 4754, Model of coating and drying process for flat polymer film fabrication, 0000 (1 August 2002); doi: 10.1117/12.476948
Proc. SPIE 4754, Molecular contamination control in photomask/reticle manufacturing using chemically amplified resists (CAR) lessons from wafer lithography, 0000 (1 August 2002); doi: 10.1117/12.476949
Proc. SPIE 4754, Novel baking technology using halogen lamps for higher-precision photomask fabrication, 0000 (1 August 2002); doi: 10.1117/12.476950
Dry Etching Techniques for Mask Materials
Proc. SPIE 4754, CAR dry etching technology to produce 0.13 um reticle, 0000 (1 August 2002); doi: 10.1117/12.476951
Proc. SPIE 4754, Etching selectivity and surface profile of attenuated phase-shifting mask using CF4/O2/He inductively coupled plasma (ICP), 0000 (1 August 2002); doi: 10.1117/12.476952
Proc. SPIE 4754, Applications of multiple-wavelength absorption endpoint system in photomask dry etcher, 0000 (1 August 2002); doi: 10.1117/12.476953
Proc. SPIE 4754, Dry etching of chrome for photomasks for 100-nm technology using chemically amplified resist, 0000 (1 August 2002); doi: 10.1117/12.476954
Photomask Processes and Materials
Proc. SPIE 4754, Microwave plasma resist stripping for mask manufacturing, 0000 (1 August 2002); doi: 10.1117/12.476956
Lithography Strategy and Mask Specifications
Proc. SPIE 4754, New concept of specification for mask flatness, 0000 (1 August 2002); doi: 10.1117/12.476957
Metrology, Equipment, and Photomask Patterning
Proc. SPIE 4754, Development of reticle-free exposure method with LCD projection image, 0000 (1 August 2002); doi: 10.1117/12.476958
Proc. SPIE 4754, Development of mask-making process for CLM manufacturing technology, 0000 (1 August 2002); doi: 10.1117/12.476959
Inspection and Repair
Proc. SPIE 4754, Required performances of reticle inspection system for ArF lithography through analysis of defect printability study, 0000 (1 August 2002); doi: 10.1117/12.476960
Proc. SPIE 4754, High-performance DUV inspection system for 100-nm generation masks, 0000 (1 August 2002); doi: 10.1117/12.476961
Proc. SPIE 4754, Detection of half-tone PSM pinhole with DUV reflected light source, 0000 (1 August 2002); doi: 10.1117/12.476962
Proc. SPIE 4754, 130-nm reticle inspection using multibeam UV-wavelength database inspection, 0000 (1 August 2002); doi: 10.1117/12.476963
Proc. SPIE 4754, Processing techniques in the manufacture of 100-nm node and below inspection test reticles, 0000 (1 August 2002); doi: 10.1117/12.476965
Quality Assurance, Defect Reduction, and Defect Dispositioning
Proc. SPIE 4754, Lithographic analysis of distributed photomask defects: II. Random mask CD errors, 0000 (1 August 2002); doi: 10.1117/12.476966
Proc. SPIE 4754, Comparison and correlation of VSS simulation results using images from different inspection systems, 0000 (1 August 2002); doi: 10.1117/12.476967
Metrology, Equipment, and Photomask Patterning
Proc. SPIE 4754, Photomask CD metrology at the 100-nm node, 0000 (1 August 2002); doi: 10.1117/12.476968
Proc. SPIE 4754, Metrology methods comparison for 2D structures on binary and embedded attenuated phase-shift masks, 0000 (1 August 2002); doi: 10.1117/12.476969
Cleaning and Pelliclization
Proc. SPIE 4754, Characteristics of residues and optical change of HT PSM during stepwise wet cleaning and optimization of HT PSM cleaning process, 0000 (1 August 2002); doi: 10.1117/12.476970
Proc. SPIE 4754, Development of hard pellicle for 157 nm, 0000 (1 August 2002); doi: 10.1117/12.476971
Proc. SPIE 4754, Experimental and numerical studies of the effects of materials and attachment conditions on pellicle induced distortions in advanced photomasks, 0000 (1 August 2002); doi: 10.1117/12.476972
Proc. SPIE 4754, Pellicle-induced distortions in advanced photomasks, 0000 (1 August 2002); doi: 10.1117/12.476974
Quality Assurance, Defect Reduction, and Defect Dispositioning
Proc. SPIE 4754, Defect printability analysis on alternating phase-shifting masks, 0000 (1 August 2002); doi: 10.1117/12.476975
Proc. SPIE 4754, Defect dispositioning using mask printability analysis on alternating phase-shifting masks, 0000 (1 August 2002); doi: 10.1117/12.476976
Proc. SPIE 4754, Defect printability of ArF alternative phase-shift mask: a critical comparison of simulation and experiment, 0000 (1 August 2002); doi: 10.1117/12.476977
Proc. SPIE 4754, Defect printability for 100-nm design rule using 193nm lithography, 0000 (1 August 2002); doi: 10.1117/12.476978
Proc. SPIE 4754, Simulation based defect printability analysis on attenuated phase-shifting masks, 0000 (1 August 2002); doi: 10.1117/12.476979