PROCEEDINGS VOLUME 4779
INTERNATIONAL SYMPOSIUM ON OPTICAL SCIENCE AND TECHNOLOGY | 7-11 JULY 2002
Advanced Characterization Techniques for Optical, Semiconductor, and Data Storage Components
INTERNATIONAL SYMPOSIUM ON OPTICAL SCIENCE AND TECHNOLOGY
7-11 July 2002
Seattle, WA, United States
Sub-Wavelength Metrology I
Proc. SPIE 4779, Sub-nm topography measurement by deflectometry: flatness standard and wafer nanotopography, 0000 (11 November 2002); doi: 10.1117/12.451723
Proc. SPIE 4779, Novel concept for the ultraprecise and fast measurement of the nanotopography of large wafers, 0000 (11 November 2002); doi: 10.1117/12.451713
Sub-Wavelength Metrology II
Proc. SPIE 4779, Investigation of optical properties of injection-moulded subwavelength gratings, 0000 (11 November 2002); doi: 10.1117/12.451731
Characterization in the VUV to X-Ray Regimes
Proc. SPIE 4779, Optical metrology in the VUV and EUV spectral range, 0000 (11 November 2002); doi: 10.1117/12.455923
Surface Defect, Roughness, and Scatter Analysis
Proc. SPIE 4779, Surface damage metrology: precision at low cost, 0000 (11 November 2002); doi: 10.1117/12.451708
Proc. SPIE 4779, Large AFM scans with a nanometer coordinate measuring machine (NCMM), 0000 (11 November 2002); doi: 10.1117/12.451749
Proc. SPIE 4779, Measurement of the 100-nm NIST SRM 1963 by lase surface light scattering, 0000 (11 November 2002); doi: 10.1117/12.451747
Proc. SPIE 4779, Performance limits of ARS sensor based on CMOS photodiode array, 0000 (11 November 2002); doi: 10.1117/12.451738
Poster Session
Proc. SPIE 4779, Theoretical investigation for improvement of scanning a near-field optical microscope, 0000 (11 November 2002); doi: 10.1117/12.451711
Ellipsometry and Reflectometry
Proc. SPIE 4779, Design and Implementation of a rotationally symmetric ellipsometer, 0000 (11 November 2002); doi: 10.1117/12.451710
Proc. SPIE 4779, Far-infrared magneto-optic generalized ellipsometry determination of free-carrier parameters in semiconductor thin film structures, 0000 (11 November 2002); doi: 10.1117/12.453722
Proc. SPIE 4779, Reflectometry-based approaches for in-situ monitoring of etch depths in plasma etching processes, 0000 (11 November 2002); doi: 10.1117/12.451735
Optical Material and Thin-Film Characterization
Proc. SPIE 4779, Simultaneous measurement of bulk absorption and fluorescence in fused silica upon ArF laser irradiation, 0000 (11 November 2002); doi: 10.1117/12.453730
Proc. SPIE 4779, Advanced industrial metrology used for qualification of high-quality optical materials, 0000 (11 November 2002); doi: 10.1117/12.451741
Proc. SPIE 4779, Channel structures observed in natural diamonds, synthetic moissanite, and synthetic quartz, 0000 (11 November 2002); doi: 10.1117/12.451719
Proc. SPIE 4779, Multidomain genetic algorithm (MDGA) and its applications to thin film metrology, 0000 (11 November 2002); doi: 10.1117/12.453733
Proc. SPIE 4779, Ag-Sb-Te system for phase change optical data storage, 0000 (11 November 2002); doi: 10.1117/12.453720
Large Area and Wavefront Inspection
Proc. SPIE 4779, Shack-Hartmann wavefront sensor precision and accuracy, 0000 (11 November 2002); doi: 10.1117/12.450850
Proc. SPIE 4779, Application of Shack-Hartmann wavefront sensing technology to transmissive optic metrology, 0000 (11 November 2002); doi: 10.1117/12.451734
Proc. SPIE 4779, Research on quasi-digitizing interferometer for optical measurement, 0000 (11 November 2002); doi: 10.1117/12.451739
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