PROCEEDINGS VOLUME 4795
INTERNATIONAL SYMPOSIUM ON OPTICAL SCIENCE AND TECHNOLOGY | 7-11 JULY 2002
Materials for Infrared Detectors II
INTERNATIONAL SYMPOSIUM ON OPTICAL SCIENCE AND TECHNOLOGY
7-11 July 2002
Seattle, WA, United States
Epitaxial and MBE Growth of HgCdTe
Proc. SPIE 4795, Characteristics of HgCdTe layers grown by MOVPE on (211)B CdTe/Si substrates, 0000 (5 December 2002); doi: 10.1117/12.453801
Proc. SPIE 4795, Extrinsic p-type doping and analysis of HgCdTe grown by molecular beam epitaxy, 0000 (5 December 2002); doi: 10.1117/12.452262
Proc. SPIE 4795, Progress in MBE growth of HgCdTe at SITP, 0000 (5 December 2002); doi: 10.1117/12.451897
Novel IR Detectors
Proc. SPIE 4795, Intermixing effect on asymmetric quantum well, 0000 (5 December 2002); doi: 10.1117/12.453828
Materials for Quantum Well IR Detectors
Proc. SPIE 4795, QWIP structural optimization, 0000 (5 December 2002); doi: 10.1117/12.453827
Proc. SPIE 4795, Modeling of very long infrared wavelength InAs/GaInSb strained layer superlattice detectors, 0000 (5 December 2002); doi: 10.1117/12.452265
IR Detector Material Characterization
Proc. SPIE 4795, Infrared spectroscopic ellipsometry on ferroelectric thin films and narrow-gap semiconductors, 0000 (5 December 2002); doi: 10.1117/12.452275
Proc. SPIE 4795, Optical and electronic characterization on HgCdTe materials, 0000 (5 December 2002); doi: 10.1117/12.452272
Proc. SPIE 4795, Improved model of HgCdTe's pseudo dielectric function for in-situ ellipsometry data analysis during MBE growth, 0000 (5 December 2002); doi: 10.1117/12.451906
Proc. SPIE 4795, Dislocations in HgCdTe (111)B films, 0000 (5 December 2002); doi: 10.1117/12.451894
Hot and Uncooled IR Detector Materials
Proc. SPIE 4795, MBE growth of HgCdTe HOT detector heterostructures, 0000 (5 December 2002); doi: 10.1117/12.452257
Proc. SPIE 4795, High-performance ferroelectric and magnetoresistive materials for next-generation thermal detector arrays, 0000 (5 December 2002); doi: 10.1117/12.452244
Proc. SPIE 4795, Sol-gel-derived barium strontium titanate thin films for uncooled infrared detector array applications, 0000 (5 December 2002); doi: 10.1117/12.451911
Proc. SPIE 4795, Pyroelectricity in alternating ultrathin organized molecular films incorporating barium ions, 0000 (5 December 2002); doi: 10.1117/12.451898
IR Detector Processing
Proc. SPIE 4795, Electrochemical CdTe deposition for HgCdTe surface passivation, 0000 (5 December 2002); doi: 10.1117/12.453820
Proc. SPIE 4795, Progress in far-infrared detection technology, 0000 (5 December 2002); doi: 10.1117/12.452270
Proc. SPIE 4795, Influence of photoresist feature geometry on ECR plasma-etched HgCdTe trenches, 0000 (5 December 2002); doi: 10.1117/12.451921
Proc. SPIE 4795, Noise measurements of HgCdTe LWIR arrays with CCD readouts, 0000 (5 December 2002); doi: 10.1117/12.451896
Proc. SPIE 4795, HgCdTe long-wavelength infrared photovoltaic detectors formed by reactive ion etching, 0000 (5 December 2002); doi: 10.1117/12.452276
Novel IR Detectors
Proc. SPIE 4795, Infrared detectors on the basis of a-SiGe:H/c-Si heterostructures, 0000 (5 December 2002); doi: 10.1117/12.451912
Proc. SPIE 4795, Porous silicon photoemission for possible electronic and accessory applications, 0000 (5 December 2002); doi: 10.1117/12.451901
Poster Session
Proc. SPIE 4795, Annealing study of Cd(1-x)Zn(x)Te crystals by IR transmission and micro-Raman spectrum, 0000 (5 December 2002); doi: 10.1117/12.451924
Proc. SPIE 4795, Performance analysis of an infrared sensor (metal/ferroelectric/semiconductor) with high-speed response, 0000 (5 December 2002); doi: 10.1117/12.451893
Proc. SPIE 4795, Performance analysis of an integrated pin/MISS OEIC for high-current photosensing applications, 0000 (5 December 2002); doi: 10.1117/12.451892
Proc. SPIE 4795, Study of heat-flow equation for uncooled infrared focal plane arrays, 0000 (5 December 2002); doi: 10.1117/12.451891
Proc. SPIE 4795, SWIR diodes of HgCdTe on GaAs substrates grown by metal organic vapor phase epitaxy, 0000 (5 December 2002); doi: 10.1117/12.451033
IR Detector Material Characterization
Proc. SPIE 4795, Minority carrier lifetime in abrupt MBE-grown HgCdTe heterostructures, 0000 (5 December 2002); doi: 10.1117/12.473283
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