PROCEEDINGS VOLUME 4808
INTERNATIONAL SYMPOSIUM ON OPTICAL SCIENCE AND TECHNOLOGY | 7-11 JULY 2002
Optical Properties of Nanocrystals
IN THIS VOLUME

0 Sessions, 22 Papers, 0 Presentations
Theory  (2)
INTERNATIONAL SYMPOSIUM ON OPTICAL SCIENCE AND TECHNOLOGY
7-11 July 2002
Seattle, WA, United States
Optical Properties of Si nc
Proc. SPIE 4808, Light emission in silicon nanostructures, 0000 (5 November 2002); doi: 10.1117/12.452153
Proc. SPIE 4808, Optical gain in PECVD-grown silicon nanocrystals, 0000 (5 November 2002); doi: 10.1117/12.451992
Si/SiO2 Systems
Proc. SPIE 4808, Highly luminescent Si quantum dots: new ways for size, position, and density control, 0000 (5 November 2002); doi: 10.1117/12.452220
Proc. SPIE 4808, Photoluminescence in crystalline-Si/Si02 quantum wells, 0000 (5 November 2002); doi: 10.1117/12.452159
Proc. SPIE 4808, Silicon nanocrystals microcavity, 0000 (5 November 2002); doi: 10.1117/12.452318
Porous Si Systems
Proc. SPIE 4808, Spatially nanostructured silicon for optical applications, 0000 (5 November 2002); doi: 10.1117/12.451973
Proc. SPIE 4808, Observation of third-harmonic generation in one-dimensional all-silicon microcavities, 0000 (5 November 2002); doi: 10.1117/12.452249
Theory
Proc. SPIE 4808, Si nanostructures embedded in SiO2: electronic and optical properties, 0000 (5 November 2002); doi: 10.1117/12.452043
Proc. SPIE 4808, Optical response of nonspherical quantum dots, 0000 (5 November 2002); doi: 10.1117/12.452007
Synthesis of nc
Proc. SPIE 4808, Optical properties of silicon nanocrystals synthesized in supercritical fluids, 0000 (5 November 2002); doi: 10.1117/12.452254
Proc. SPIE 4808, Optical properties of II-VI semiconductor nanoclusters for use as phosphors, 0000 (5 November 2002); doi: 10.1117/12.451976
Nc in Sol-gel Glasses
Proc. SPIE 4808, Photoluminescence properties of organic-inorganic sol-gel films doped with semiconductor quantum dots, 0000 (5 November 2002); doi: 10.1117/12.452214
Proc. SPIE 4808, Copper oxide and selenide nanoparticles embedded into sol-gel-derived silica glasses doped with europium, 0000 (5 November 2002); doi: 10.1117/12.451977
III-V Semiconductor nc
Proc. SPIE 4808, Surface morphology of electrochemically etched porous GaP, 0000 (5 November 2002); doi: 10.1117/12.451980
II-VI Semiconductor nc
Proc. SPIE 4808, Optical properties of quantum dots in photonic dots, 0000 (5 November 2002); doi: 10.1117/12.452464
Proc. SPIE 4808, Synthesis and characterization of colloidal mercury chacogenide quantum dots, 0000 (5 November 2002); doi: 10.1117/12.452245
Proc. SPIE 4808, Significant influence of surface states on the electroluminescence of CdS nanoparticles, 0000 (5 November 2002); doi: 10.1117/12.452172
Poster Session
Proc. SPIE 4808, Size and dielectric dependence of off-resonant nonlinearity in Au: dielectric nanocomposite system, 0000 (5 November 2002); doi: 10.1117/12.451988
Proc. SPIE 4808, Monte Carlo simulation of electron transport in Si/SiO2 superlattices, 0000 (5 November 2002); doi: 10.1117/12.452215
Proc. SPIE 4808, Observation of local field distribution in photonic crystal microcavity by SNOM technique, 0000 (5 November 2002); doi: 10.1117/12.452241
Proc. SPIE 4808, Split-mode-enhanced second-harmonic generation in porous silicon-coupled microcavities, 0000 (5 November 2002); doi: 10.1117/12.452250
Proc. SPIE 4808, Optical properties of Sb-doped AgI nanoparticles, 0000 (5 November 2002); doi: 10.1117/12.457504
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