LAMP 2002: INTERNATIONAL CONGRESS ON LASER ADVANCED MATERIALS PROCESSING
27-31 May 2002
Osaka, Japan
Laser Patterning and Structuring
Proc. SPIE 4830, Overview of laser applications: the state of the art and the future trend, 0000 (19 February 2003); doi: 10.1117/12.486517
Proc. SPIE 4830, Challenge to advanced materials processing with lasers in Japan, 0000 (19 February 2003); doi: 10.1117/12.486592
Proc. SPIE 4830, Oxidation state control of micro metal-oxide patterns produced by using laser-induced forward transfer technique, 0000 (19 February 2003); doi: 10.1117/12.486597
Proc. SPIE 4830, Laser structuring method for MID, 0000 (19 February 2003); doi: 10.1117/12.486551
Proc. SPIE 4830, Laser adjustment of beryllium copper sheet using temperature gradient mechanism, 0000 (19 February 2003); doi: 10.1117/12.486552
Proc. SPIE 4830, Effects of wavelengths on processing indium tin oxide thin films using diode-pumped Nd:YLF laser, 0000 (19 February 2003); doi: 10.1117/12.486570
Proc. SPIE 4830, Micromachining of ITO film by LD-pumped SGH YAG laser, 0000 (19 February 2003); doi: 10.1117/12.486573
Proc. SPIE 4830, Analysis on resin removal in laser drilling of printed circuit board, 0000 (19 February 2003); doi: 10.1117/12.499621
Laser Microwelding
Proc. SPIE 4830, Microwelding of ultrathin metal foil using Yb-fiber laser, 0000 (19 February 2003); doi: 10.1117/12.499620
Proc. SPIE 4830, YAG laser microwelding of stainless steel and shape memory alloy, 0000 (19 February 2003); doi: 10.1117/12.499698
Proc. SPIE 4830, Clearweld laser transmission welding of thermoplastic polymers: light transmission and color considerations, 0000 (19 February 2003); doi: 10.1117/12.486516
Proc. SPIE 4830, Study and control process in laser conduction welding for millisecond pulse duration range, 0000 (19 February 2003); doi: 10.1117/12.486515
Microdrilling and Cutting
Proc. SPIE 4830, Modeling and investigation of melt ejection dynamics for laser drilling with short pulses, 0000 (19 February 2003); doi: 10.1117/12.486555
Proc. SPIE 4830, Thermal analysis and quality prediction of via hole drilled on Si device by short-pulse laser, 0000 (19 February 2003); doi: 10.1117/12.486535
Proc. SPIE 4830, Precision microfabrication with Q-switched CO2 lasers, 0000 (19 February 2003); doi: 10.1117/12.486600
Proc. SPIE 4830, Water-jet-guided laser processing, 0000 (19 February 2003); doi: 10.1117/12.486514
Proc. SPIE 4830, Diffractive/refractive hybrid f-theta lens for laser drilling of multilayer printed circuit boards, 0000 (19 February 2003); doi: 10.1117/12.486556
Proc. SPIE 4830, Hole drilling of glass-foam substrates with YAG laser, 0000 (19 February 2003); doi: 10.1117/12.486558
Proc. SPIE 4830, Microdrilling of PCB substrate using DPSS third-harmonic laser, 0000 (19 February 2003); doi: 10.1117/12.486559
Proc. SPIE 4830, Microscribing of ceramics by Nd:YLF laser, 0000 (19 February 2003); doi: 10.1117/12.486560
Proc. SPIE 4830, Laser ablation of GaN/sapphire structure for LED, 0000 (19 February 2003); doi: 10.1117/12.486561
Fundamentals of Laser-Matter Interaction
Proc. SPIE 4830, Diagnostics of particle dynamics during deposition of optically functional thin films by laser ablation, 0000 (19 February 2003); doi: 10.1117/12.486536
Proc. SPIE 4830, Laser ablation plume of FeSi2 alloy target studied by TOF mass and optical emission spectroscopies, 0000 (19 February 2003); doi: 10.1117/12.486562
Proc. SPIE 4830, Time-resolved monitoring of ZnO plume by ArF laser ablation: influence of surrounding gas, 0000 (19 February 2003); doi: 10.1117/12.486563
Proc. SPIE 4830, Thermal stimulation of laser processing of Si, 0000 (19 February 2003); doi: 10.1117/12.486554
Proc. SPIE 4830, How to sensitively measure the rate of neutral free-radical production by photodeionization of negative ion beams, 0000 (19 February 2003); doi: 10.1117/12.486564
Proc. SPIE 4830, Ab initio molecular orbital characterization of some sources for laser-assisted radical beam epitaxy of group-III nitrides, 0000 (19 February 2003); doi: 10.1117/12.486579
Proc. SPIE 4830, Laser-induced melting in two-dimensional colloidal system, 0000 (19 February 2003); doi: 10.1117/12.486513
Laser Micromachining
Proc. SPIE 4830, Fabrication of 1-um patterns on fused silica plates by laser-induced backside wet etching (LIBWE), 0000 (19 February 2003); doi: 10.1117/12.486571
Proc. SPIE 4830, Laser-based technology of scanning near-field optical probe fabrication: study of kinetics and progress of measuring, 0000 (19 February 2003); doi: 10.1117/12.486565
Proc. SPIE 4830, Fabrication of microchannels by UV laser ablation, 0000 (19 February 2003); doi: 10.1117/12.486566
Proc. SPIE 4830, Laser-assisted chemical vapor deposition of carbon for the growth of high-aspect-ratio microrods and direct writing of surface patterns, 0000 (19 February 2003); doi: 10.1117/12.486576
MEMS and Micro Devices
Proc. SPIE 4830, Laser-induced forward transfer direct-write of miniature sensor and microbattery systems, 0000 (19 February 2003); doi: 10.1117/12.486567
Proc. SPIE 4830, True 3D volumetric patterning of photostructurable glass using UV laser irradiation and variable exposure processing: fabrication of meso-scale devices, 0000 (19 February 2003); doi: 10.1117/12.486588
Proc. SPIE 4830, Laser ablation for MEMS microfabrication on Si and Kapton substrates, 0000 (19 February 2003); doi: 10.1117/12.486521
Medical and Biological Applications
Proc. SPIE 4830, Nonlaminate microphotosterolithography using LCD live-motion mask, 0000 (19 February 2003); doi: 10.1117/12.486568
Proc. SPIE 4830, Surface modification of titanium alloy using a Q-switched diode-pumped solid state laser at 355 nm, 0000 (19 February 2003); doi: 10.1117/12.486569
Proc. SPIE 4830, Laser manipulation of bio/biomimetic materials, 0000 (19 February 2003); doi: 10.1117/12.486512
Nanotechnology
Proc. SPIE 4830, Toward nanoprocess applications with laser-cooled silicon atoms, 0000 (19 February 2003); doi: 10.1117/12.486587
Nanoparticles
Proc. SPIE 4830, Laser-ablation-induced nanoparticles in water, 0000 (19 February 2003); doi: 10.1117/12.486522
Proc. SPIE 4830, Fabrication of well-defined silicon and titanium oxide nanoparticles by laser ablation, 0000 (19 February 2003); doi: 10.1117/12.486572
Proc. SPIE 4830, Characteristics of electric devices made by direct nanoparticle spraying, 0000 (19 February 2003); doi: 10.1117/12.486523
Proc. SPIE 4830, Behavior of zinc oxide nanoparticles in pulsed-laser deposition, 0000 (19 February 2003); doi: 10.1117/12.486590
Thin Film Deposition
Proc. SPIE 4830, Preparation of polyperinaphthlenic organic semiconductor nanoparticles by excimer laser ablation and application of a few electronic devices, 0000 (19 February 2003); doi: 10.1117/12.486574
Proc. SPIE 4830, Refractive index of SiO2 thin films deposited by pulsed-laser deposition with silicone targets for fabricating waveguide devices, 0000 (19 February 2003); doi: 10.1117/12.486575
Proc. SPIE 4830, Diamond-like carbon films by pulsed-laser deposition with additional laser irradiation to plume, 0000 (19 February 2003); doi: 10.1117/12.499709
Proc. SPIE 4830, Deposition of LiNbO3 waveguide by pulsed-laser deposition, 0000 (19 February 2003); doi: 10.1117/12.486589
Proc. SPIE 4830, Decomposition of methylene blue with photocatalytic TiO2 thin films deposited by pulsed-laser deposition, 0000 (19 February 2003); doi: 10.1117/12.486577
Proc. SPIE 4830, Optical properties of ZnxCd1-xS mixed-crystal thin film produced by PLD, 0000 (19 February 2003); doi: 10.1117/12.486578
Proc. SPIE 4830, Development of multilayer ceramic capacitor by pulsed-laser deposition, 0000 (19 February 2003); doi: 10.1117/12.486580
Proc. SPIE 4830, Optical properties of N-doped diamond-like carbon films synthesized by pulsed-laser deposition, 0000 (19 February 2003); doi: 10.1117/12.486524
Annealing and Surface Treatment
Proc. SPIE 4830, 300-W XeCl excimer laser annealing and sequential lateral solidification in low-temperature polysilicon technology, 0000 (19 February 2003); doi: 10.1117/12.499696
Proc. SPIE 4830, Laser-induced shock wave removal of chemical-mechanical polishing slurries from silicon wafers, 0000 (19 February 2003); doi: 10.1117/12.486511
Proc. SPIE 4830, Physical mechanisms of liquid-assisted laser cleaning, 0000 (19 February 2003); doi: 10.1117/12.486525
Proc. SPIE 4830, Crystalization of sol-gel-derived precursor zinc oxide film during KrF excimer laser irradiation, 0000 (19 February 2003); doi: 10.1117/12.499712
Laser Optics and Systems
Proc. SPIE 4830, Development of low-absorption AR coatings for CO2 laser by ion-assisted deposition, 0000 (19 February 2003); doi: 10.1117/12.486526
Proc. SPIE 4830, Influence of laser absorption by nonlinear optical crystal on SHG efficiency, 0000 (19 February 2003); doi: 10.1117/12.486595