PROCEEDINGS VOLUME 4995
INTEGRATED OPTOELECTRONICS DEVICES | 25-31 JANUARY 2003
Novel In-Plane Semiconductor Lasers II
IN THIS VOLUME

0 Sessions, 21 Papers, 0 Presentations
INTEGRATED OPTOELECTRONICS DEVICES
25-31 January 2003
San Jose, CA, United States
Mid-IR Lasers I
Proc. SPIE 4995, Recent advances in quantum cascade laser research and novel applications, 0000 (3 July 2003); doi: 10.1117/12.475746
High-Power Lasers I
Proc. SPIE 4995, Broad-area and MOPA lasers with integrated grating components for beam shaping and novel functions, 0000 (3 July 2003); doi: 10.1117/12.480183
Proc. SPIE 4995, High-power single-mode 915-nm InAlGaAs quantum-well lasers grown by MOCVD, 0000 (3 July 2003); doi: 10.1117/12.475751
Proc. SPIE 4995, 3-W high-brightness tapered diode lasers at 735 nm based on tensile-strained GaAsP QWs, 0000 (3 July 2003); doi: 10.1117/12.475763
Dilute Nitrides
Proc. SPIE 4995, MOCVD-grown InGaAsN quantum-well lasers, 0000 (3 July 2003); doi: 10.1117/12.475793
Proc. SPIE 4995, GaInNAsSb long-wavelength lasers on GaAs, 0000 (3 July 2003); doi: 10.1117/12.480184
Telecom Lasers
Proc. SPIE 4995, Digital wavelength-selected DBR laser, 0000 (3 July 2003); doi: 10.1117/12.480189
Nitride Lasers
Proc. SPIE 4995, Advances in InAlGaN laser diode technology toward the development of UV optical sources, 0000 (3 July 2003); doi: 10.1117/12.475786
Proc. SPIE 4995, GaN-based laser diodes emitting from ultraviolet to blue-green, 0000 (3 July 2003); doi: 10.1117/12.475759
Proc. SPIE 4995, High-power AlGaInN lasers for Blu-ray disc system, 0000 (3 July 2003); doi: 10.1117/12.479758
Mid-IR Lasers II
Proc. SPIE 4995, Terahertz quantum cascade lasers, 0000 (3 July 2003); doi: 10.1117/12.475764
Low-Dimensional Lasers
Proc. SPIE 4995, Lasing in disordered media, 0000 (3 July 2003); doi: 10.1117/12.479757
Physics and Applications
Proc. SPIE 4995, Broadband tuning in optical communication band using Fabry-Perot laser diodes without antireflection coating, 0000 (3 July 2003); doi: 10.1117/12.475775
Proc. SPIE 4995, Coupled multiple quantum well 650-nm emitting GaInP laser diodes, 0000 (3 July 2003); doi: 10.1117/12.475785
Proc. SPIE 4995, Chaotic data encryption using semiconductor laser diodes, 0000 (3 July 2003); doi: 10.1117/12.480192
Proc. SPIE 4995, Analog and digital high-speed modulation of quantum cascade laser, 0000 (3 July 2003); doi: 10.1117/12.480193
High-Power Lasers II
Proc. SPIE 4995, High-brightness long 940-nm diode lasers with double-waveguide structure, 0000 (3 July 2003); doi: 10.1117/12.475752
Proc. SPIE 4995, High-power and high-brightness laser diode structures at 980 nm using an Al-free active region, 0000 (3 July 2003); doi: 10.1117/12.475765
Proc. SPIE 4995, Performace and reliability of ARROW single-mode and 100-um laser diode and the use of NAM in Al-free lasers, 0000 (3 July 2003); doi: 10.1117/12.480194
Telecom Lasers
Proc. SPIE 4995, Dispersion penalty and performance of directly modulated 14-pin butterfly-packaged external-cavity laser diode with 2.5-Gb/s speed and transmission distance of 650 km, 0000 (3 July 2003); doi: 10.1117/12.501369
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