INTEGRATED OPTOELECTRONICS DEVICES
25-31 January 2003
San Jose, CA, United States
Spin Sensing I
Proc. SPIE 4999, Mn-based ferromagnetic semiconductors, 0000 (1 July 2003); doi: 10.1117/12.475403
Proc. SPIE 4999, Spin electronics, 0000 (1 July 2003); doi: 10.1117/12.479605
Spin Sensing II
Proc. SPIE 4999, New standard of spin detectors, 0000 (1 July 2003); doi: 10.1117/12.479610
Proc. SPIE 4999, Spin-injection-induced magnetization reversal, 0000 (1 July 2003); doi: 10.1117/12.475405
Spin Sensing I
Proc. SPIE 4999, Quantum cascade transmitters for ultrasensitive chemical agent and explosives detection, 0000 (1 July 2003); doi: 10.1117/12.485542
Quantum Sensing for Defence
Proc. SPIE 4999, Novel light detection and sensing devices based on optical nanocomposites, 0000 (1 July 2003); doi: 10.1117/12.485543
Proc. SPIE 4999, Intersubband quantum-box midinfrared semiconductor lasers, 0000 (1 July 2003); doi: 10.1117/12.485544
New Materials for Quantum Sensing
Proc. SPIE 4999, Sensing terahertz signals with III-V quantum nanostructures, 0000 (1 July 2003); doi: 10.1117/12.479611
Proc. SPIE 4999, Charge and spin functionality in wide bandgap oxides, 0000 (1 July 2003); doi: 10.1117/12.479612
Proc. SPIE 4999, Light-controlled photon tunneling through nonlinear nanoholes, 0000 (1 July 2003); doi: 10.1117/12.479615
High-Speed Quantum Detectors and Sensors
Proc. SPIE 4999, High-speed and highly reliable InP/InGaAs avalanche photodiode for optical communications, 0000 (1 July 2003); doi: 10.1117/12.479551
Proc. SPIE 4999, Dark current study of quantum dot infrared photodetector, 0000 (1 July 2003); doi: 10.1117/12.479550
Proc. SPIE 4999, Monolithic Si-based technology for optical receiver circuits, 0000 (1 July 2003); doi: 10.1117/12.482504
Proc. SPIE 4999, Ultrafast uni-traveling-carrier photodiodes for measurement and sensing systems, 0000 (1 July 2003); doi: 10.1117/12.479809
Quantum Sensing for VLWIR and Beyond I
Proc. SPIE 4999, Evolution of quantum detectors from VLWIR to FIR, 0000 (1 July 2003); doi: 10.1117/12.479619
Proc. SPIE 4999, BIB detector development for the far infrared: from Ge to GaAs, 0000 (1 July 2003); doi: 10.1117/12.479623
Quantum Sensing for VLWIR and Beyond II
Proc. SPIE 4999, New far-infrared photon detectors, 0000 (1 July 2003); doi: 10.1117/12.479624
Proc. SPIE 4999, Predictions of the responsivity of terahertz quantum well infrared photodetectors, 0000 (1 July 2003); doi: 10.1117/12.480307
Proc. SPIE 4999, Optoelectronic investigation of novel PbSrSe thin films for midinfrared device applications, 0000 (1 July 2003); doi: 10.1117/12.479626
Nanotechnology for Quantum Sensing I
Proc. SPIE 4999, New III-V-based magnetic semiconductors and their optical and magnetic properties, 0000 (1 July 2003); doi: 10.1117/12.482476
Proc. SPIE 4999, Growth and in situ analysis of InAs/InP quantum dot stack and its far infrared absorption properties, 0000 (1 July 2003); doi: 10.1117/12.482480
Proc. SPIE 4999, Tuning the optical properties of carbon nanotube solutions using amphiphilic self-assembly, 0000 (1 July 2003); doi: 10.1117/12.475398
Proc. SPIE 4999, Optical studies of InAs/GaAs and Ge/Si quantum dot structures, 0000 (1 July 2003); doi: 10.1117/12.482478
Nanotechnology for Quantum Sensing II
Proc. SPIE 4999, Noninvasive electrical characterization of semiconductor at bulk and interfaces, 0000 (1 July 2003); doi: 10.1117/12.482505
Proc. SPIE 4999, Physics and possibility for new device applications in GaN-based p-i-n structures, 0000 (1 July 2003); doi: 10.1117/12.482471
Proc. SPIE 4999, III-nitrate ultraviolet photonic materials: epitaxial growth, optical and electrical properties, and applications, 0000 (1 July 2003); doi: 10.1117/12.483961
Proc. SPIE 4999, Chemical dry cleaning and pretreatment on the electrical and reliability characteristic of high-k gate dielectrics in MOS device, 0000 (1 July 2003); doi: 10.1117/12.475404
Nano Structure and Nano Devices
Proc. SPIE 4999, Small Au/SAM/Au junctions by EB lithography, 0000 (1 July 2003); doi: 10.1117/12.479602
Proc. SPIE 4999, Design and development of short- and long-wavelength MQW infrared vertical cavity surface emitting lasers, 0000 (1 July 2003); doi: 10.1117/12.475402
New Design and Devices
Proc. SPIE 4999, Why small avalanche photodiodes are beautiful, 0000 (1 July 2003); doi: 10.1117/12.482482
Proc. SPIE 4999, Resonant cavity enhanced photodetectors (RCE-PDs): structure, material, analysis and optimization, 0000 (1 July 2003); doi: 10.1117/12.482484
Nano Structure and Nano Electronics
Proc. SPIE 4999, Direct probing of local-density-of-states in semiconductor nanostructures, 0000 (1 July 2003); doi: 10.1117/12.479607
Proc. SPIE 4999, Aluminum nanodot array formed by anodic oxidation and its conduction properties, 0000 (1 July 2003); doi: 10.1117/12.479609
Proc. SPIE 4999, Tunnel barrier formation in carbon nanotubes for quantum dot devices, 0000 (1 July 2003); doi: 10.1117/12.479603
Proc. SPIE 4999, Carbon nanotube channel single electron transistor with ultrahigh Coulomb energy of 5000K, 0000 (1 July 2003); doi: 10.1117/12.475399
New Materials and New Devices
Proc. SPIE 4999, Review on recent development of quantum dots: from optoelectronic devices to novel biosensing applications, 0000 (1 July 2003); doi: 10.1117/12.482481
Infrared FPA
Proc. SPIE 4999, HgCdTe infrared detectors: historical prospect, 0000 (1 July 2003); doi: 10.1117/12.479679
Proc. SPIE 4999, Space science applications of thermopile detector arrays, 0000 (1 July 2003); doi: 10.1117/12.482474
Type II Superlattices
Proc. SPIE 4999, Trap centers and minority carrier lifetimes in InAs/(GaIn)Sb superlattice long wavelength photodetectors, 0000 (1 July 2003); doi: 10.1117/12.479548
Proc. SPIE 4999, Recent advances in InAs/GaSb superlattices for very long wavelength infrared detection, 0000 (1 July 2003); doi: 10.1117/12.483916
Quantum Sensing for Defence
Proc. SPIE 4999, Modeling of photonic crystals and nanostructures, 0000 (1 July 2003); doi: 10.1117/12.485546
Quantum Dot Sources and Detectors
Proc. SPIE 4999, Resonant cavity enhanced GaAs/AlGaAs IR detectors, 0000 (1 July 2003); doi: 10.1117/12.475401
Proc. SPIE 4999, MOCVD-grown InAs/GaAs quantum dots, 0000 (1 July 2003); doi: 10.1117/12.488041
Proc. SPIE 4999, Modeling of the capture and thermal escape of the carriers from InAs quantum dots at different temperatures, 0000 (1 July 2003); doi: 10.1117/12.485706
Proc. SPIE 4999, Confocal photoluminescence method for measuring the carrier migration in structures with quantum dots, 0000 (1 July 2003); doi: 10.1117/12.485707
Proc. SPIE 4999, Shape Engineered InAs Quantum Dots with Stabilized Electronic Properties, 0000 (1 July 2003); doi: 10.1117/12.477795
Proc. SPIE 4999, Quantum dot formation with silicon doping in InGaN/GaN quantum well structures and its implications in radiative mechanisms, 0000 (1 July 2003); doi: 10.1117/12.477794
Proc. SPIE 4999, High-performance of single mode InAs/InGaAs/GaAs quantum dot lasers of 1.3-micron range, 0000 (1 July 2003); doi: 10.1117/12.479825
Nano Structure and Nano Devices
Proc. SPIE 4999, Quantum 1/f optimization of quantum sensing in spintronic, electro-optic, and nanodevices, 0000 (1 July 2003); doi: 10.1117/12.501204
Proc. SPIE 4999, The nature of fundamental 1/f noise in quantum sensing technology, negative entropy, and uncertainty principle, 0000 (1 July 2003); doi: 10.1117/12.501205
Quantum Sensing for Defence
Proc. SPIE 4999, Very high-average-power quantum cascade lasers by GasMBE, 0000 (1 July 2003); doi: 10.1117/12.507398
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