PROCEEDINGS VOLUME 5004
ELECTRONIC IMAGING 2003 | 20-24 JANUARY 2003
Poly-Silicon Thin Film Transistor Technology and Applications in Displays and Other Novel Technology Areas
ELECTRONIC IMAGING 2003
20-24 January 2003
Santa Clara, CA, United States
Keynote Paper
Proc. SPIE 5004, Future display market: Major discontinuities or more of the same?, 0000 (16 May 2003); doi: 10.1117/12.482579
Advanced Poly-Si Crystallization Technology I
Proc. SPIE 5004, Property of single-crystalline Si TFTs fabricated with u-Czochralski (grain filter) process, 0000 (16 May 2003); doi: 10.1117/12.482582
Proc. SPIE 5004, High-resolution optics for thin Si-film crystallization using excimer lasers: present status and future development, 0000 (16 May 2003); doi: 10.1117/12.479599
Advanced Poly-Si Crystallization Technology II
Proc. SPIE 5004, High-performance polycrystalline silicon TFTs fabricated by high-temperature process with excimer laser annealing, 0000 (16 May 2003); doi: 10.1117/12.482584
Proc. SPIE 5004, Novel high-performance TFTs fabricated by selectively enlarging laser x'tallization (SELAX) technology, 0000 (16 May 2003); doi: 10.1117/12.482588
Proc. SPIE 5004, N-shot SLS-processed polycrystalline silicon TFTs, 0000 (16 May 2003); doi: 10.1117/12.482589
Proc. SPIE 5004, Phase stepping microscopy for rapid control of laser crystallization of Si for flat panel display applications, 0000 (16 May 2003); doi: 10.1117/12.479598
Proc. SPIE 5004, Modeling effects of laser beam shaping for projection laser crystallization, 0000 (16 May 2003); doi: 10.1117/12.482590
Equipment/Process Technology
Proc. SPIE 5004, 300 W XeCl excimer laser annealing and sequential lateral solidification in low temperature poly-silicon technology, 0000 (16 May 2003); doi: 10.1117/12.476825
Proc. SPIE 5004, Location-controlled crystallization of Si films for TFT circuitapplications, 0000 (16 May 2003); doi: 10.1117/12.482592
Process Technology
Proc. SPIE 5004, Low-temperature plasma-deposited microcrystalline silicon thin films: an emerging material for stable thin film transistors, 0000 (16 May 2003); doi: 10.1117/12.476827
Proc. SPIE 5004, TFT threshold voltage adjustment with in-situ doped PVD silicon films, 0000 (16 May 2003); doi: 10.1117/12.482596
Proc. SPIE 5004, Low temperature processing of SiO2 thin films by HD-PECVD technique for gate dielectric applications, 0000 (16 May 2003); doi: 10.1117/12.482597
Poly-Si AM-OLED Technology
Proc. SPIE 5004, Application of high-efficiency phosphorescent OLEDs in both passive and active matrix displays, 0000 (16 May 2003); doi: 10.1117/12.479600
Proc. SPIE 5004, Advanced poly-LED displays, 0000 (16 May 2003); doi: 10.1117/12.479597
Proc. SPIE 5004, Novel small-molecule OLED with Alq3 derivative, 0000 (16 May 2003); doi: 10.1117/12.473885
p-Si Device/Circuit Technology
Proc. SPIE 5004, State of the art of fine-patterned Si TFT, 0000 (16 May 2003); doi: 10.1117/12.482573
Proc. SPIE 5004, Comparative analysis of advanced poly-silicon thin-film transistor architectures for drain field relief, 0000 (16 May 2003); doi: 10.1117/12.473883
Proc. SPIE 5004, AC measurement for characterizing the trap processes in poly-silicon TFTs, 0000 (16 May 2003); doi: 10.1117/12.473884
Proc. SPIE 5004, LCD gamma correction by nonlinear digital-to-analogue converter, 0000 (16 May 2003); doi: 10.1117/12.482576
Poly-Si AM-OLED Technology
Proc. SPIE 5004, High-performance polysilicon circuits on thin metal foils, 0000 (16 May 2003); doi: 10.1117/12.482574
Alternative Substrates/Applications
Proc. SPIE 5004, Thin film transistors made of nanocrystalline silicon for CMOS on plastic, 0000 (16 May 2003); doi: 10.1117/12.476822
Proc. SPIE 5004, Poly-silicon TFT AM-OLED on thin flexible metal substrates, 0000 (16 May 2003); doi: 10.1117/12.482577
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