Keynote Session
Proc. SPIE 5037, Imprint lithography: lab curiosity or the real NGL, 0000 (16 June 2003); doi: 10.1117/12.490126
EUV Systems/Overview
Proc. SPIE 5037, The EUV program at ASML: an update, 0000 (16 June 2003); doi: 10.1117/12.483706
Proc. SPIE 5037, Implementing flare compensation for EUV masks through localized mask CD resizing, 0000 (16 June 2003); doi: 10.1117/12.482344
EUV Optics and Image Quality
Proc. SPIE 5037, EUV interferometry of the 0.3-NA MET optic, 0000 (16 June 2003); doi: 10.1117/12.484735
Proc. SPIE 5037, Development of illumination optics and projection optics for high-NA EUV exposure tool (HiNA), 0000 (16 June 2003); doi: 10.1117/12.484936
Proc. SPIE 5037, Lithographic characterization of improved projection optics in the EUVL engineering test stand, 0000 (16 June 2003); doi: 10.1117/12.484967
Proc. SPIE 5037, Lithographic flare measurements of EUV full-field projection optics, 0000 (16 June 2003); doi: 10.1117/12.485547
EUV Sources I
Proc. SPIE 5037, High-power EUV lithography sources based on gas discharges and laser-produced plasmas, 0000 (16 June 2003); doi: 10.1117/12.482676
Proc. SPIE 5037, Development of radiation-magnetohydrodynamic computer modeling of gas-discharge EUV sources for microlithography, 0000 (16 June 2003); doi: 10.1117/12.484933
Proc. SPIE 5037, Star pinch scalable EUV source, 0000 (16 June 2003); doi: 10.1117/12.484932
Proc. SPIE 5037, Use of tin as a plasma source material for high conversion efficiency, 0000 (16 June 2003); doi: 10.1117/12.483751
Nanolithography/Nanopatterning I
Proc. SPIE 5037, Masked ion beam lithography and direct structuring on curved surfaces, 0000 (16 June 2003); doi: 10.1117/12.482716
Proc. SPIE 5037, Scanning probe lithography, 0000 (16 June 2003); doi: 10.1117/12.484991
Proc. SPIE 5037, Electron-beam lithography method for sub-50-nm isolated trench with high aspect ratio, 0000 (16 June 2003); doi: 10.1117/12.482343
Nanoimprint Lithography I
Proc. SPIE 5037, Design and performance of a step and repeat imprinting machine, 0000 (16 June 2003); doi: 10.1117/12.490133
Proc. SPIE 5037, Analysis of critical dimension uniformity for Step and Flash imprint lithography, 0000 (16 June 2003); doi: 10.1117/12.484923
Proc. SPIE 5037, Reactive polymers: a route to nanoimprint lithography at low temperatures, 0000 (16 June 2003); doi: 10.1117/12.484442
Proc. SPIE 5037, Impact of vacuum environment on the hot embossing process, 0000 (16 June 2003); doi: 10.1117/12.482750
EUV Materials and Multilayers
Proc. SPIE 5037, Improved materials meeting the demands for EUV substrates, 0000 (16 June 2003); doi: 10.1117/12.484728
Proc. SPIE 5037, Measuring and tailoring CTE within ULE glass, 0000 (16 June 2003); doi: 10.1117/12.484925
Proc. SPIE 5037, Design and performance of capping layers for EUV multilayer mirrors, 0000 (16 June 2003); doi: 10.1117/12.484966
Proc. SPIE 5037, Mo/Si multilayers deposited by low-pressure rotary magnet cathode sputtering for extreme-ultraviolet lithography, 0000 (16 June 2003); doi: 10.1117/12.484436
EUV Metrology/Mirrors
Proc. SPIE 5037, Development of an experimental EUV interferometer for benchmarking several EUV wavefront metrology schemes, 0000 (16 June 2003); doi: 10.1117/12.484935
Proc. SPIE 5037, Characterization of the PTB EUV reflectometry facility for large EUVL optical components, 0000 (16 June 2003); doi: 10.1117/12.482668
Proc. SPIE 5037, Multi component EUV multilayer mirrors, 0000 (16 June 2003); doi: 10.1117/12.484984
Proc. SPIE 5037, Spectral reflectance tuning of EUV mirrors for metrology applications, 0000 (16 June 2003); doi: 10.1117/12.482644
Proc. SPIE 5037, Development of an ultra high-precision x-ray telescope with an adaptive optics system, 0000 (16 June 2003); doi: 10.1117/12.482338
Advanced Masks I
Proc. SPIE 5037, Rigorous EM simulation of the influence of the structure of mask patterns on EUVL imaging, 0000 (16 June 2003); doi: 10.1117/12.484986
Proc. SPIE 5037, Design and method of fabricating phase-shift masks for extreme-ultraviolet lithography by partial etching into the EUV multilayer mirror, 0000 (16 June 2003); doi: 10.1117/12.484731
Proc. SPIE 5037, Defect repair for extreme-ultraviolet lithography (EUVL) mask blanks, 0000 (16 June 2003); doi: 10.1117/12.484729
Proc. SPIE 5037, Process for improved reflectivity uniformity in extreme-ultraviolet lithography (EUVL) masks, 0000 (16 June 2003); doi: 10.1117/12.484988
Proc. SPIE 5037, Asymmetry and thickness effects in reflective EUV masks, 0000 (16 June 2003); doi: 10.1117/12.483602
EUV Sources II: Improvements and Metrology
Proc. SPIE 5037, Candidate plasma-facing materials for EUV lithography source components, 0000 (16 June 2003); doi: 10.1117/12.484928
Proc. SPIE 5037, Experimental evaluation of stopping power of high-energy ions from laser-produced plasma by a magnetic field, 0000 (16 June 2003); doi: 10.1117/12.483747
Proc. SPIE 5037, Metrology tools for EUVL-source characterization and optimization, 0000 (16 June 2003); doi: 10.1117/12.482667
Proc. SPIE 5037, Compact laser plasma EUV source based on a gas puff target for metrology, 0000 (16 June 2003); doi: 10.1117/12.482749
Emerging Resist Technology: Joint Session with 5039
Proc. SPIE 5037, Estimated impact of shot noise in extreme-ultraviolet lithography, 0000 (16 June 2003); doi: 10.1117/12.484730
Proc. SPIE 5037, Effect of polymer molecular weight on AFM polymer aggregate size and LER of EUV resists, 0000 (16 June 2003); doi: 10.1117/12.482370
Contamination Issues in Lithography: Joint Session with 5040
Proc. SPIE 5037, Rates and mechanisms of optic contamination in the EUV engineering test stand, 0000 (16 June 2003); doi: 10.1117/12.499359
Proc. SPIE 5037, Relation between electron- and photon-caused oxidation in EUVL optics, 0000 (16 June 2003); doi: 10.1117/12.499360
Proc. SPIE 5037, Effects of radiation-induced carbon contamination on the performance of an EUV lithographic optic, 0000 (16 June 2003); doi: 10.1117/12.499372
Proc. SPIE 5037, Atomic hydrogen cleaning of EUV multilayer optics, 0000 (16 June 2003); doi: 10.1117/12.499373
Advanced Masks II
Proc. SPIE 5037, Understanding particle defect transport in an ultra clean sputter coating process, 0000 (16 June 2003); doi: 10.1117/12.484970
Proc. SPIE 5037, Efficient simulation of light diffraction from three-dimensional EUV masks using field decomposition techniques, 0000 (16 June 2003); doi: 10.1117/12.482744
Proc. SPIE 5037, Rigorous EUV mask simulator using 2D and 3D waveguide methods, 0000 (16 June 2003); doi: 10.1117/12.484963
Electron Projection Lithography I
Proc. SPIE 5037, Nikon EB stepper: its system design and preliminary performance, 0000 (16 June 2003); doi: 10.1117/12.484972
Proc. SPIE 5037, Novel electron optics for large subfield electron-beam projection lithography (EPL), 0000 (16 June 2003); doi: 10.1117/12.484934
Proc. SPIE 5037, Reduction of image placement errors in EPL masks, 0000 (16 June 2003); doi: 10.1117/12.490136
Proc. SPIE 5037, EPL stencil mask defect inspection system using a transmission electron beam, 0000 (16 June 2003); doi: 10.1117/12.484975
E-Beam Direct Write/Maskless
Proc. SPIE 5037, MxL: pseudo-maskless high-throughput nanolithography, 0000 (16 June 2003); doi: 10.1117/12.484420
Proc. SPIE 5037, Optical analysis of mirror-based pattern generation, 0000 (16 June 2003); doi: 10.1117/12.484971