PROCEEDINGS VOLUME 5038
MICROLITHOGRAPHY 2003 | 23-28 FEBRUARY 2003
Metrology, Inspection, and Process Control for Microlithography XVII
MICROLITHOGRAPHY 2003
23-28 February 2003
Santa Clara, California, United States
Defect Analysis
Proc. SPIE 5038, Demonstration of imaging interferometric microscopy (IIM), 0000 (2 June 2003); doi: 10.1117/12.483429
Proc. SPIE 5038, New laboratory EUV reflectometer for large optics using a laser plasma source, 0000 (2 June 2003); doi: 10.1117/12.485042
Proc. SPIE 5038, Identification and quantitative analysis of contaminants found in photolithography purge gases, 0000 (2 June 2003); doi: 10.1117/12.488483
Proc. SPIE 5038, Application of simulation-based defect printability analysis for mask qualification control, 0000 (2 June 2003); doi: 10.1117/12.485010
Proc. SPIE 5038, Concept of ultra-fast at-wavelength inspection of defects on a multilayer mask using a laser-produced plasma source, 0000 (2 June 2003); doi: 10.1117/12.482811
Overlay and Registration Metrology I
Proc. SPIE 5038, Comparison of pattern placement errors as measured using traditional overlay targets and design rule structures, 0000 (2 June 2003); doi: 10.1117/12.482817
Proc. SPIE 5038, Overlay metrology simulations: analytical and experimental validations, 0000 (2 June 2003); doi: 10.1117/12.483661
Proc. SPIE 5038, An improved method to determine optimal alignment sampling layouts, 0000 (2 June 2003); doi: 10.1117/12.483662
Proc. SPIE 5038, Evaluation of alignment target designs for Cu and low-K dual damascene processes, 0000 (2 June 2003); doi: 10.1117/12.482800
Proc. SPIE 5038, Calibration strategies for overlay and registration metrology, 0000 (2 June 2003); doi: 10.1117/12.488486
Proc. SPIE 5038, Overlay considerations for 300-mm lithography, 0000 (2 June 2003); doi: 10.1117/12.485019
Critical Dimension Metrology I
Proc. SPIE 5038, Simulation study of repeatability and bias in the CD-SEM, 0000 (2 June 2003); doi: 10.1117/12.485012
Proc. SPIE 5038, Implementation of reference measurement system using CD-AFM, 0000 (2 June 2003); doi: 10.1117/12.483667
Proc. SPIE 5038, Characterization of charging in CD-SEM for 90-nm metrology and beyond, 0000 (2 June 2003); doi: 10.1117/12.483690
Proc. SPIE 5038, Aerial image-based mask inspection: a development effort to detect what might impact printing image quality on wafers, 0000 (2 June 2003); doi: 10.1117/12.483535
Proc. SPIE 5038, FTIR based nondestructive method for metrology of depths in poly silicon-filled trenches, 0000 (2 June 2003); doi: 10.1117/12.484998
Scatterometry
Proc. SPIE 5038, Subnanometer wavelength metrology of lithographically prepared structures: a comparison of neutron and X-ray scattering, 0000 (2 June 2003); doi: 10.1117/12.483669
Proc. SPIE 5038, Novel diffraction-based spectroscopic method for overlay metrology, 0000 (2 June 2003); doi: 10.1117/12.483476
Proc. SPIE 5038, UV scatterometry, 0000 (2 June 2003); doi: 10.1117/12.485037
Proc. SPIE 5038, Improved gate process control at the 130-nm node using spectroscopic-ellipsometry-based profile metrology, 0000 (2 June 2003); doi: 10.1117/12.485002
Proc. SPIE 5038, Scatterometry measurement precision and accuracy below 70 nm, 0000 (2 June 2003); doi: 10.1117/12.488117
Process Control and Characterization I
Proc. SPIE 5038, Run-to-run CD error analysis and control with monitoring of effective dose and focus, 0000 (2 June 2003); doi: 10.1117/12.482807
Proc. SPIE 5038, Simultaneous dose and focus monitoring on product wafers, 0000 (2 June 2003); doi: 10.1117/12.483473
Proc. SPIE 5038, Enhancing yield and productivity with process control applications for contact and via module, 0000 (2 June 2003); doi: 10.1117/12.485025
Proc. SPIE 5038, Spectroscopic ellipsometry for lithography front-end level CD control: a complete analysis for production integration, 0000 (2 June 2003); doi: 10.1117/12.485031
Proc. SPIE 5038, Spectroscopic Ellipsometry based Scatterometry enabling 193nm Litho and Etch process control for the 110nm technology node and beyond, 0000 (2 June 2003); doi: 10.1117/12.485011
Mask-Related Metrology
Process Control and Characterization II
Proc. SPIE 5038, Electrical linewidth metrology for systematic CD variation characterization and causal analysis, 0000 (2 June 2003); doi: 10.1117/12.483664
Proc. SPIE 5038, Implementation and benefits of advanced process control for lithography CD and overlay, 0000 (2 June 2003); doi: 10.1117/12.483665
Proc. SPIE 5038, Lithography and metrology overlay troubleshooting by advanced query and multivariate analysis, 0000 (2 June 2003); doi: 10.1117/12.483470
Proc. SPIE 5038, Quantitative profile-shape measurement study on a CD-SEM with application to etch-bias control and several different CMOS features, 0000 (2 June 2003); doi: 10.1117/12.485016
Proc. SPIE 5038, Improved model for focus-exposure data analysis, 0000 (2 June 2003); doi: 10.1117/12.485040
Proc. SPIE 5038, CD control at low K1 optical lithography in DRAM device, 0000 (2 June 2003); doi: 10.1117/12.485026
Overlay and Registration Metrology II
Proc. SPIE 5038, Optimization of align marks and overlay targets in VIA first dual damascene process, 0000 (2 June 2003); doi: 10.1117/12.485032
Proc. SPIE 5038, New method to enhance overlay tool performance, 0000 (2 June 2003); doi: 10.1117/12.488481
Proc. SPIE 5038, Characterization of overlay mark fidelity, 0000 (2 June 2003); doi: 10.1117/12.483430
Proc. SPIE 5038, Performance study of new segmented overlay marks for advanced wafer processing, 0000 (2 June 2003); doi: 10.1117/12.483477
Materials-Related Metrology I
Critical Dimension Metrology II
Proc. SPIE 5038, New way of handling dimensional measurement results for integrated circuit technology, 0000 (2 June 2003); doi: 10.1117/12.485021
Proc. SPIE 5038, Characterizing and understanding stray tilt: the next major contributor to CD-SEM tool matching, 0000 (2 June 2003); doi: 10.1117/12.485033
Proc. SPIE 5038, Nanoprecision AFM imaging by stereo deconvolution: theory, applications, and experimental validation, 0000 (2 June 2003); doi: 10.1117/12.482649
Proc. SPIE 5038, New method for the quantitative evaluation of wafer pattern shape based on CAD data, 0000 (2 June 2003); doi: 10.1117/12.483688
Scatterometry II
Proc. SPIE 5038, Accuracy limitations in specular-mode optical topography extraction, 0000 (2 June 2003); doi: 10.1117/12.488484
Proc. SPIE 5038, Scatterometry as a practical in-situ metrology technology, 0000 (2 June 2003); doi: 10.1117/12.488480
Proc. SPIE 5038, Application of scatterometry for CD and profile metrology in 193-nm lithography process development, 0000 (2 June 2003); doi: 10.1117/12.483692
Proc. SPIE 5038, Applications of angular scatterometry for the measurement of multiply periodic features, 0000 (2 June 2003); doi: 10.1117/12.488116
Materials-Related Metrology II