Image Quality Assessment
Proc. SPIE 5040, Experimental determination of lens aberrations from the intensity point-spread function in the focal region, 0000 (26 June 2003); doi: 10.1117/12.485388
Proc. SPIE 5040, Evaluation of Litel's in-situ interferometer (ISI) technique for measuring projection lens aberrations: an initial study, 0000 (26 June 2003); doi: 10.1117/12.485525
Proc. SPIE 5040, Size-dependent flare and its effect on imaging, 0000 (26 June 2003); doi: 10.1117/12.485441
Proc. SPIE 5040, Impact of across-pupil transmittance variation in projection lenses on fine device pattern imaging, 0000 (26 June 2003); doi: 10.1117/12.485453
Proc. SPIE 5040, Illumination pupil fill measurement and analysis and its application in scanner V-H bias characterization for 130-nm node and beyond, 0000 (26 June 2003); doi: 10.1117/12.485352
Imaging and Process Simulation
Proc. SPIE 5040, Methods for benchmarking photolithography simulators, 0000 (26 June 2003); doi: 10.1117/12.485537
Proc. SPIE 5040, Fast and rigorous three-dimensional mask diffraction simulation using Battle-Lemarie wavelet-based multiresolution time-domain method, 0000 (26 June 2003); doi: 10.1117/12.485433
Proc. SPIE 5040, Improved modeling performance with an adapted vectorial formulation of the Hopkins imaging equation, 0000 (26 June 2003); doi: 10.1117/12.485357
Proc. SPIE 5040, Fast topography simulation using differential method, 0000 (26 June 2003); doi: 10.1117/12.485355
Proc. SPIE 5040, Rigorous simulation of exposure over nonplanar wafers, 0000 (26 June 2003); doi: 10.1117/12.485390
Proc. SPIE 5040, Sensitivity of rinse, dry, and etch parameters, 0000 (26 June 2003); doi: 10.1117/12.485361
Advanced Imaging Analysis
Proc. SPIE 5040, Impact of wavefront errors on low k1 processes at extremely high NA, 0000 (26 June 2003); doi: 10.1117/12.482694
Proc. SPIE 5040, Analysis of imaging performance degradation, 0000 (26 June 2003); doi: 10.1117/12.485465
Proc. SPIE 5040, Measuring and modeling flare in optical lithography, 0000 (26 June 2003); doi: 10.1117/12.485539
Proc. SPIE 5040, Characterizing illumination angular uniformity with phase-shifting masks, 0000 (26 June 2003); doi: 10.1117/12.485438
Mask-Imaging Interaction
Proc. SPIE 5040, Critical evaluation of photomask needs for competing 65-nm node RET options, 0000 (26 June 2003); doi: 10.1117/12.485439
Proc. SPIE 5040, The MEF revisited: low k<sub>1</sub> effects versus mask topography effects, 0000 (26 June 2003); doi: 10.1117/12.485449
Proc. SPIE 5040, Dark-field high-transmission chromeless lithography, 0000 (26 June 2003); doi: 10.1117/12.485518
Proc. SPIE 5040, 65-nm full-chip implementation using double dipole lithography, 0000 (26 June 2003); doi: 10.1117/12.485445
DRAM/SRAM/Backend Patterning
Proc. SPIE 5040, Full-level alternating PSM for sub-100nm DRAM gate patterning, 0000 (26 June 2003); doi: 10.1117/12.485521
Proc. SPIE 5040, Layer-specific illumination optimization by Monte Carlo method, 0000 (26 June 2003); doi: 10.1117/12.485383
Proc. SPIE 5040, Evaluation of ArF CLM in the sub-100-nm DRAM cell, 0000 (26 June 2003); doi: 10.1117/12.485406
Proc. SPIE 5040, 157-nm lithography for 65-nm node SRAM-gate, 0000 (26 June 2003); doi: 10.1117/12.485376
Proc. SPIE 5040, ArF solutions for low-k<sub>1</sub> back-end imaging, 0000 (26 June 2003); doi: 10.1117/12.485502
Alternating Phase-Shifting Masks
Proc. SPIE 5040, Full phase-shifting methodology for 65-nm node lithography, 0000 (26 June 2003); doi: 10.1117/12.485440
Proc. SPIE 5040, Alternating phase-shift masks for contact patterning, 0000 (26 June 2003); doi: 10.1117/12.485495
Proc. SPIE 5040, Scaling rules of phase error control for the manufacturing of alternating phase-shifting masks for 193-nm photolithography and beyond, 0000 (26 June 2003); doi: 10.1117/12.485504
Proc. SPIE 5040, The impact of mask topography and resist effects on optical proximity correction in advanced alternating phase-shift process, 0000 (26 June 2003); doi: 10.1117/12.485508
Proc. SPIE 5040, Limits of strong phase-shift patterning for device research, 0000 (26 June 2003); doi: 10.1117/12.485332
Techniques for Low-k1 Imaging
Proc. SPIE 5040, Vortex via process: analysis and mask fabrication for contact CDs <80 nm, 0000 (26 June 2003); doi: 10.1117/12.485418
Proc. SPIE 5040, Application of in-situ aberration measurements to pattern-specific imaging optimization, 0000 (26 June 2003); doi: 10.1117/12.485534
Proc. SPIE 5040, Novel strong-resolution enhancement technology with phase-shifting mask for logic gate pattern fabrication, 0000 (26 June 2003); doi: 10.1117/12.485363
Proc. SPIE 5040, Forbidden pitch or duty-free: revealing the causes of across-pitch imaging differences, 0000 (26 June 2003); doi: 10.1117/12.485490
Image Quality and Design Rules
Proc. SPIE 5040, Optical rule checking for proximity-corrected mask shapes, 0000 (26 June 2003); doi: 10.1117/12.485477
Proc. SPIE 5040, Failure prediction across process window for robust OPC, 0000 (26 June 2003); doi: 10.1117/12.485478
Proc. SPIE 5040, A methodology to calculate line-end correction feature performance as a function of reticle cost, 0000 (26 June 2003); doi: 10.1117/12.485533
Proc. SPIE 5040, Trends in systematic nonparticle yield loss mechanisms and the implication for IC design, 0000 (26 June 2003); doi: 10.1117/12.497494
Critical Dimension Control
Proc. SPIE 5040, ACLV-analysis in production and its impact on product performance, 0000 (26 June 2003); doi: 10.1117/12.485337
Proc. SPIE 5040, Scatterometer-based scanner fingerprinting technique (ScatterLith) and its applications in image field and ACLV analysis, 0000 (26 June 2003); doi: 10.1117/12.485434
Proc. SPIE 5040, Improvement of shot uniformity on a wafer by controlling backside transmittance distribution of a photomask, 0000 (26 June 2003); doi: 10.1117/12.485391
Proc. SPIE 5040, Flare-induced CD variation correction using transmittance controlled mask, 0000 (26 June 2003); doi: 10.1117/12.485409
Poster Session: Process Optimization and Control
Proc. SPIE 5040, Generating sub-30-nm polysilicon gates using PECVD amorphous carbon as hardmask and anti-reflective coating, 0000 (26 June 2003); doi: 10.1117/12.485532
Focus Monitoring and Control
Proc. SPIE 5040, Study of the influence of substrate topography on the focusing performance of advanced lithography scanners, 0000 (26 June 2003); doi: 10.1117/12.485535
Proc. SPIE 5040, Simple and highly sensitive focus monitoring utilizing an aperture on backside of photomask, 0000 (26 June 2003); doi: 10.1117/12.485324
Proc. SPIE 5040, Novel in-situ focus monitor technology in attenuated PSM under actual illumination condition, 0000 (26 June 2003); doi: 10.1117/12.485364
Proc. SPIE 5040, Desirable wafer edge flatness for CD control in photolithography, 0000 (26 June 2003); doi: 10.1117/12.485522
Proc. SPIE 5040, Aberration's impact on subresolution contact hole process windows in ultrathin imaging resist, 0000 (26 June 2003); doi: 10.1117/12.485505
157-nm Lithography
Proc. SPIE 5040, Image performance and mask characterization of 157-nm alternating phase-shifting mask, 0000 (26 June 2003); doi: 10.1117/12.485519
Proc. SPIE 5040, 157-nm Micrascan VII initial lithography results, 0000 (26 June 2003); doi: 10.1117/12.485423
Proc. SPIE 5040, Contamination rates of optical surfaces at 157 nm: impurities outgassed from construction materials and from photoresists, 0000 (26 June 2003); doi: 10.1117/12.485468
Proc. SPIE 5040, Optical anisotropy in the cubic crystal of CaF2: scaling arguments and their relation to dispersing absorption, 0000 (26 June 2003); doi: 10.1117/12.485467
Immersion Lithography
Proc. SPIE 5040, Deep UV immersion interferometric lithography, 0000 (26 June 2003); doi: 10.1117/12.482337
Proc. SPIE 5040, Water immersion optical lithography for the 45-nm node, 0000 (26 June 2003); doi: 10.1117/12.485489