PROCEEDINGS VOLUME 5041
ADVANCED MICROELECTRONIC MANUFACTURING | 27-28 FEBRUARY 2003
Process and Materials Characterization and Diagnostics in IC Manufacturing
ADVANCED MICROELECTRONIC MANUFACTURING
27-28 February 2003
Santa Clara, CA, United States
Process Control and Characterization
Proc. SPIE 5041, Neural-network-based time series modeling of optical emission spectroscopy data for fault detection in reactive ion etching, 0000 (15 July 2003); doi: 10.1117/12.485230
Proc. SPIE 5041, Spectroscopic ellipsometric scatterometry: sources of errors in critical dimension control, 0000 (15 July 2003); doi: 10.1117/12.485218
Proc. SPIE 5041, Copy result exactly using EB-Scope technology, 0000 (15 July 2003); doi: 10.1117/12.485238
Defect Data Analysis
Proc. SPIE 5041, Defect distribution model validation and effective process control, 0000 (15 July 2003); doi: 10.1117/12.485235
Proc. SPIE 5041, COPs/particles discrimination using an automated surface inspection tool, 0000 (15 July 2003); doi: 10.1117/12.485232
Proc. SPIE 5041, In-line e-beam inspection with optimized sampling and newly developed ADC, 0000 (15 July 2003); doi: 10.1117/12.485225
Proc. SPIE 5041, Characterization and reduction of copper chemical-mechanical-polishing-induced scratches, 0000 (15 July 2003); doi: 10.1117/12.485223
Proc. SPIE 5041, Successful demonstration of a comprehensive lithography defect monitoring strategy, 0000 (15 July 2003); doi: 10.1117/12.485219
Metrology for Materials Characterization
Proc. SPIE 5041, Advanced ASIC defect control, 0000 (15 July 2003); doi: 10.1117/12.497615
Proc. SPIE 5041, Novel technique for contamination analysis around the edge, the bevel, and the edge exclusion area of 200- and 300-mm silicon wafers, 0000 (15 July 2003); doi: 10.1117/12.485233
Metrology for Process Characterization
Proc. SPIE 5041, Sidewall structure estimation from CD-SEM for lithographic process control, 0000 (15 July 2003); doi: 10.1117/12.485229
Proc. SPIE 5041, CD-SEM measurement line-edge roughness test patterns for 193 nm lithography, 0000 (15 July 2003); doi: 10.1117/12.485234
Proc. SPIE 5041, Location of interconnect defects using focused ion beam (FIB)-induced voltage contrast and subsequent in-situ FIB cross-sectioning and auger electron analysis in the Physical Electronics 200/300-mm SMART-tool, 0000 (15 July 2003); doi: 10.1117/12.487627
Proc. SPIE 5041, X-ray reflectivity: a new metrology alternative for DUV ARCs, 0000 (15 July 2003); doi: 10.1117/12.487626
Proc. SPIE 5041, LithoCell-integrated critical dimension metrology, 0000 (15 July 2003); doi: 10.1117/12.485241
Proc. SPIE 5041, Complete monitoring strategy to quantify matching and performance for multiple CDSEM in advanced fab, 0000 (15 July 2003); doi: 10.1117/12.485227
Wafer Inspection I
Proc. SPIE 5041, Industry survey on nonvisual defect detection, 0000 (15 July 2003); doi: 10.1117/12.485211
Wafer Inspection II
Proc. SPIE 5041, Semiconductor wafer defect detection using digital holography, 0000 (15 July 2003); doi: 10.1117/12.485237
Proc. SPIE 5041, Nanovision: a new paradigm for enabling fast optical inspection of nanoscale structures, 0000 (15 July 2003); doi: 10.1117/12.485222
Poster Session
Proc. SPIE 5041, In-line measurement characterization for multilayer film stack of SiGe by advance spectroscopy ellipsometer, 0000 (15 July 2003); doi: 10.1117/12.485236
Proc. SPIE 5041, Development of an electron optical system using EB projection optics in reflection mode for EB inspection, 0000 (15 July 2003); doi: 10.1117/12.485231
Metrology for Materials Characterization
Proc. SPIE 5041, Depth profile characterization of hydrogen implanted silicon using spectroscopic ellipsometry, 0000 (15 July 2003); doi: 10.1117/12.499100
Defect Data Analysis
Proc. SPIE 5041, Intentional defect array wafers: their practical use in semiconductor control and monitoring systems, 0000 (15 July 2003); doi: 10.1117/12.513460
Back to Top