PROCEEDINGS VOLUME 5065
SIXTH INTERNATIONAL CONFERENCE ON MATERIAL SCIENCE AND MATERIAL PROPERTIES FOR INFRARED OPTOELECTRONICS | 22-24 MAY 2002
Sixth International Conference on Material Science and Material Properties for Infrared Optoelectronics
IN THIS VOLUME

0 Sessions, 33 Papers, 0 Presentations
SIXTH INTERNATIONAL CONFERENCE ON MATERIAL SCIENCE AND MATERIAL PROPERTIES FOR INFRARED OPTOELECTRONICS
22-24 May 2002
Kiev, Ukraine
Device Applications
Proc. SPIE 5065, Computational optoelectromechanics and its application to MEMS VCSELs, 0000 (14 April 2003); doi: 10.1117/12.502160
Proc. SPIE 5065, Spatially nanostructured silicon for optical applications, 0000 (14 April 2003); doi: 10.1117/12.502162
Proc. SPIE 5065, Competition of infrared detector technologies, 0000 (14 April 2003); doi: 10.1117/12.502163
Proc. SPIE 5065, IR photodetectors based on MBE-grown MCT layers, 0000 (14 April 2003); doi: 10.1117/12.502164
Proc. SPIE 5065, One-dimensional photonic crystal as a many-positional adder functioning on closed electromagnetic modes, 0000 (14 April 2003); doi: 10.1117/12.502165
Proc. SPIE 5065, IRFPA real-time nonuniformity correction using the FPGA technology, 0000 (14 April 2003); doi: 10.1117/12.502167
Proc. SPIE 5065, Multifunctional controlled IR-emitting element, 0000 (14 April 2003); doi: 10.1117/12.502173
Proc. SPIE 5065, Model of control of glow discharge electron gun current for microelectronics production applications, 0000 (14 April 2003); doi: 10.1117/12.502174
Proc. SPIE 5065, Features of thermal radiation of semitransparent objects, 0000 (14 April 2003); doi: 10.1117/12.502175
Characterization and Properties
Proc. SPIE 5065, Photogalvanic currents in quantum well structures induced by infrared radiation, 0000 (14 April 2003); doi: 10.1117/12.502177
Proc. SPIE 5065, Electromagnetic field structure and quenching in one-dimensional photonic crystals, 0000 (14 April 2003); doi: 10.1117/12.502178
Proc. SPIE 5065, Quartz as artificial pyroactive material, 0000 (14 April 2003); doi: 10.1117/12.502179
Proc. SPIE 5065, Nonelastic electron scattering in HgTe, 0000 (14 April 2003); doi: 10.1117/12.502180
Proc. SPIE 5065, Substrate influence on infrared absorption by clusters of small spheres, 0000 (14 April 2003); doi: 10.1117/12.502182
Proc. SPIE 5065, Threshold characteristics of p-Si-PtSi barriers with highly-doped surface nanolayer, 0000 (14 April 2003); doi: 10.1117/12.502186
Proc. SPIE 5065, Influence of doping methods on electro-physical properties of CdTe:Mn crystals, 0000 (14 April 2003); doi: 10.1117/12.502188
Proc. SPIE 5065, IR photodetectors on CdSb, In4Se3, In4Te3-epitaxial barrier structures, 0000 (14 April 2003); doi: 10.1117/12.502189
Proc. SPIE 5065, Electrical properties of HgMnTe Schottky diodes, 0000 (14 April 2003); doi: 10.1117/12.502192
Proc. SPIE 5065, Study of HgCdMnZnTe main-band parameters, 0000 (14 April 2003); doi: 10.1117/12.502193
Proc. SPIE 5065, Electrical and optical properties of indium antimonide doped by cadmium and tellurium, 0000 (14 April 2003); doi: 10.1117/12.502194
Proc. SPIE 5065, Interplay of phase transformation temperatures and Dingle temperatures in narrow-gap semiconductors, 0000 (14 April 2003); doi: 10.1117/12.502195
Proc. SPIE 5065, Electronic activity of dislocations and point defects of deformation origin in Hg1-xCdxTe, 0000 (14 April 2003); doi: 10.1117/12.502196
Proc. SPIE 5065, Influence of the electrochemical process of the macroporous silicon fabrication on surface local chemical states, 0000 (14 April 2003); doi: 10.1117/12.502274
Growth Techniques and Technological Processing
Proc. SPIE 5065, Prototype infrared optical sensor and solar cell made of B-FeSi2 thin film, 0000 (14 April 2003); doi: 10.1117/12.502278
Proc. SPIE 5065, Photonic 2D crystals built from nanotubes, nanochannels, and nanowires: review of progress in synthesis, properties, and promising applications, 0000 (14 April 2003); doi: 10.1117/12.502285
Proc. SPIE 5065, Defect structure and diffusion of defects in narrow-gap Hg1-xCdxTe crystals, 0000 (14 April 2003); doi: 10.1117/12.502286
Proc. SPIE 5065, Formation of low-density InAs/InP(001) quantum dot arrays, 0000 (14 April 2003); doi: 10.1117/12.502288
Proc. SPIE 5065, Formation of InAs quantum dots in an aluminium oxide matrix by lateral selective wet oxidation, 0000 (14 April 2003); doi: 10.1117/12.502292
Proc. SPIE 5065, Chemical etching of CdTe and CdxHg1-xTe in the H2O2-HJ-tartaric acid solutions, 0000 (14 April 2003); doi: 10.1117/12.502293
Proc. SPIE 5065, Chemical dissolution of gallium antimonide in HNO3-HCl-CH3COOH solutions, 0000 (14 April 2003); doi: 10.1117/12.502294
Proc. SPIE 5065, Schottky photodiode arrays on the basis of n-Pb1-xSnxTe1-ySey epitaxial layers, lattice-matched with {100}KCl substrates, 0000 (14 April 2003); doi: 10.1117/12.502295
Proc. SPIE 5065, SiOx<Fe> thin films as material for uncooled microbolometer, 0000 (14 April 2003); doi: 10.1117/12.502296
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