PROCEEDINGS VOLUME 5130
PHOTOMASK AND NEXT GENERATION LITHOGRAPHY MASK TECHNOLOGY X | 16-18 APRIL 2003
Photomask and Next-Generation Lithography Mask Technology X
PHOTOMASK AND NEXT GENERATION LITHOGRAPHY MASK TECHNOLOGY X
16-18 April 2003
Yokohama, Japan
Mask Development Strategy
Proc. SPIE 5130, Photomask and lithography technologies: past 10 years and what will come next, 0000 (28 August 2003); doi: 10.1117/12.504045
Photomask Processes and Materials
Proc. SPIE 5130, Development of attenuating PSM shifter for F<sub>2</sub> and high-transmission ArF lithography, 0000 (28 August 2003); doi: 10.1117/12.504047
Proc. SPIE 5130, UV light with oxygen treatment of phase shift photoblank for phase and transmission control: applicable to MxSi(1-x)OyN(y-1), 0000 (28 August 2003); doi: 10.1117/12.504048
Proc. SPIE 5130, Current developments of a high-performance CA resist for mask-making application, 0000 (28 August 2003); doi: 10.1117/12.504049
Proc. SPIE 5130, New development method eliminating the loading and microloading effect, 0000 (28 August 2003); doi: 10.1117/12.504050
Proc. SPIE 5130, Modeling and correction of global CD uniformity caused by fogging and loading effects in 90-nm-node CAR process, 0000 (28 August 2003); doi: 10.1117/12.504051
Proc. SPIE 5130, Dry etch proximity modeling in mask fabrication, 0000 (28 August 2003); doi: 10.1117/12.504052
Proc. SPIE 5130, Effect of chamber seasoning on the chrome dry etch process, 0000 (28 August 2003); doi: 10.1117/12.504053
Proc. SPIE 5130, Identification of defect source to control reticle defect density for CAR and dry etching in the photomask process, 0000 (28 August 2003); doi: 10.1117/12.504055
Inspection, Repair, and Metrology
Proc. SPIE 5130, Inspection of aggressive OPC using aerial image-based mask inspection, 0000 (28 August 2003); doi: 10.1117/12.504058
Proc. SPIE 5130, New die-to-database inspection algorithm for inspection of 90-nm node reticles, 0000 (28 August 2003); doi: 10.1117/12.504059
Proc. SPIE 5130, Aerial-image based inspeciton of AAPSM for 193-nm lithography generation, 0000 (28 August 2003); doi: 10.1117/12.504060
Proc. SPIE 5130, Application of electron-beam induced processes to mask repair, 0000 (28 August 2003); doi: 10.1117/12.504061
Proc. SPIE 5130, New chelation clean process for removing gallium from the focused-ion-beam repaired mask, 0000 (28 August 2003); doi: 10.1117/12.504063
Proc. SPIE 5130, Actinic aerial image measurement tool for 157-nm lithography, 0000 (28 August 2003); doi: 10.1117/12.504064
Proc. SPIE 5130, PSM quartz etch depth evaluation with an atomic force microscope, 0000 (28 August 2003); doi: 10.1117/12.504065
NGL Mask Technology
Proc. SPIE 5130, Recent lithographic results from LEEPL, 0000 (28 August 2003); doi: 10.1117/12.504066
Proc. SPIE 5130, Alignment accuracy of LEEPL: image placement error correction, 0000 (28 August 2003); doi: 10.1117/12.504067
Proc. SPIE 5130, Low-stress stencil masks using SOI substrates for EPL and LEEPL, 0000 (28 August 2003); doi: 10.1117/12.504234
Proc. SPIE 5130, Proximity-effect correction for EPL by using multiple pattern-area-density maps and pattern classification, 0000 (28 August 2003); doi: 10.1117/12.504235
Proc. SPIE 5130, Evaluation of a transmission CD-SEM for EB stencil masks, 0000 (28 August 2003); doi: 10.1117/12.504237
Proc. SPIE 5130, EUVL: transition from research to commercialization, 0000 (28 August 2003); doi: 10.1117/12.504239
Proc. SPIE 5130, Pattern inspection of EUV mask using an EUV microscope, 0000 (28 August 2003); doi: 10.1117/12.504240
Proc. SPIE 5130, Development of a plasma etch process for TaN absorber patterning on EUV masks, 0000 (28 August 2003); doi: 10.1117/12.504243
Proc. SPIE 5130, EPL data conversion system, 0000 (28 August 2003); doi: 10.1117/12.504244
Proc. SPIE 5130, EPL mask data conversion system EPLON, 0000 (28 August 2003); doi: 10.1117/12.504245
Proc. SPIE 5130, 200-mm EPL stencil mask fabrication by using SOI substrate, 0000 (28 August 2003); doi: 10.1117/12.504246
Proc. SPIE 5130, LEEPL data conversion system, 0000 (28 August 2003); doi: 10.1117/12.504248
Proc. SPIE 5130, LEEPL mask fabrication using SOI substrates, 0000 (28 August 2003); doi: 10.1117/12.504250
Proc. SPIE 5130, Development of LEEPL 6025 format mask blanks, 0000 (28 August 2003); doi: 10.1117/12.504926
Proc. SPIE 5130, On-site use of 1x stencil mask: control over image placement and dimension, 0000 (28 August 2003); doi: 10.1117/12.504258
Proc. SPIE 5130, State-of-the-art performance of stencil mask for LEEPL, 0000 (28 August 2003); doi: 10.1117/12.504273
Proc. SPIE 5130, Complementary splitting with stress emulation for stencil masks, 0000 (28 August 2003); doi: 10.1117/12.504071
Proc. SPIE 5130, Exposure contrast of an EUV mask, 0000 (28 August 2003); doi: 10.1117/12.504072
Proc. SPIE 5130, Simulation of extreme ultraviolet masks with defective multilayers, 0000 (28 August 2003); doi: 10.1117/12.504075
Proc. SPIE 5130, Dependence of pattern printability on thicknesses of absorber and cap layers of Mo/Si mask blank for EUV lithography, 0000 (28 August 2003); doi: 10.1117/12.504376
Phase-Shift and OPC Mask Technology
Proc. SPIE 5130, Using OPC to optimize for image slope and improve process window, 0000 (28 August 2003); doi: 10.1117/12.504379
Proc. SPIE 5130, Controlling defocus impact on OPC performance, 0000 (28 August 2003); doi: 10.1117/12.504380
Proc. SPIE 5130, Single photoresist and double exposure (SPADE) for 0.18-um ROM and beyond, 0000 (28 August 2003); doi: 10.1117/12.504382
Proc. SPIE 5130, Alternating phase shift mask architecture scalability, implementations, and applications for 90-nm and 65-nm technology nodes and beyond, 0000 (28 August 2003); doi: 10.1117/12.504391
Proc. SPIE 5130, Practical approach for AAPSM image imbalance correction for sub-100-nm lithography, 0000 (28 August 2003); doi: 10.1117/12.504393
Proc. SPIE 5130, Low k1 lithography patterning option for the 90-nm and 65-nm nodes, 0000 (28 August 2003); doi: 10.1117/12.504394
Proc. SPIE 5130, Phase defect printability analysis for chromeless phase lithography technology, 0000 (28 August 2003); doi: 10.1117/12.504395
Proc. SPIE 5130, Investigation on micro-trench formation of alternating aperture phase shift masks, 0000 (28 August 2003); doi: 10.1117/12.504175
Proc. SPIE 5130, Investigation of phase variation impact on CPL PSM for low k1 imaging, 0000 (28 August 2003); doi: 10.1117/12.504176
Mask Development Strategy
Proc. SPIE 5130, Mask pattern generator employing EPL technology, 0000 (28 August 2003); doi: 10.1117/12.504177
Proc. SPIE 5130, Photomask repeater strategy for high-quality and low-cost reticle fabrication, 0000 (28 August 2003); doi: 10.1117/12.504178
Photomask Processes and Materials
Proc. SPIE 5130, Initial capability of new photomask-blank deposition tool, 0000 (28 August 2003); doi: 10.1117/12.504179
Proc. SPIE 5130, Optical properties of a-Si films for 157-nm lithography, 0000 (28 August 2003); doi: 10.1117/12.504180
Proc. SPIE 5130, The feasibility study of thin Cr film for low process bias, 0000 (28 August 2003); doi: 10.1117/12.504181
Proc. SPIE 5130, Improvement of critical dimension stability of chemically amplified resist by overcoat II, 0000 (28 August 2003); doi: 10.1117/12.504182
Proc. SPIE 5130, CAR blanks performance for advanced reticle fabrication, 0000 (28 August 2003); doi: 10.1117/12.504183
Proc. SPIE 5130, Comparative evaluation of positive and negative chemically amplified resist characteristics for 90-nm-node photomask production, 0000 (28 August 2003); doi: 10.1117/12.504184
Proc. SPIE 5130, Investigation of e-beam sensitive negative-tone chemically amplified resists for binary mask making, 0000 (28 August 2003); doi: 10.1117/12.504185
Proc. SPIE 5130, Comparative study between REAP 200 and FEP171 CAR with 50 kV raster e-beam system for sub-100-nm technology, 0000 (28 August 2003); doi: 10.1117/12.504186
Proc. SPIE 5130, A study of post-exposure baking effect for CAR process in photomask fabrication, 0000 (28 August 2003); doi: 10.1117/12.504187
Proc. SPIE 5130, Negative chemically amplified resist in making mask for a logic device with high pattern density, 0000 (28 August 2003); doi: 10.1117/12.504188