PROCEEDINGS VOLUME 5136
2003 CHAPTER BOOKS | 1 JANUARY - 31 DECEMBER 2003
Solid State Crystals 2002: Crystalline Materials for Optoelectronics
2003 CHAPTER BOOKS
1 January - 31 December 2003
Bellingham, WA, United States
Characterization of Cyrstalline Materials
Proc. SPIE 5136, Radiation effect on domain and defect structure of BaTiO3 crystals, 0000 (22 October 2003); doi: 10.1117/12.518713
Proc. SPIE 5136, Phase transitions in PbTiO3 microcrystals of different size, 0000 (22 October 2003); doi: 10.1117/12.518744
Proc. SPIE 5136, New concepts in scatterometric investigations of crystalline boules, 0000 (22 October 2003); doi: 10.1117/12.518745
Proc. SPIE 5136, Influence of proton irradiation on optical characteristics of LiNbO3:Cu wafers, 0000 (22 October 2003); doi: 10.1117/12.518746
Proc. SPIE 5136, Study of mixed oxide perovskites (1-x)Sr(Al0.5Ta0.5)O3:xLaAlO3 single crystals using Raman and Brillouin scattering methods, 0000 (22 October 2003); doi: 10.1117/12.518761
Proc. SPIE 5136, Physical properties of potassium erbium double tungstate KEr(WO4)2, 0000 (22 October 2003); doi: 10.1117/12.518763
Proc. SPIE 5136, Thermoluminescent properties of sol-gel-produced (MgO)x:(SiO2)y compounds, 0000 (22 October 2003); doi: 10.1117/12.518771
Proc. SPIE 5136, Pyroelectric effect and electric conductivity in theorine-doped TGS single crystals, 0000 (22 October 2003); doi: 10.1117/12.518775
Proc. SPIE 5136, Relation between domain structure distortion and spontaneous polarization in l-lysine-doped TGS single crystals, 0000 (22 October 2003); doi: 10.1117/12.518776
Proc. SPIE 5136, Low-frequency noise spectroscopy method for extracting the parameters of deep level centers in semiconductor materials, 0000 (22 October 2003); doi: 10.1117/12.518779
Proc. SPIE 5136, Investigation of deep levels in porous silicon by photoconductivity decay and thermally stimulated depolarization current methods, 0000 (22 October 2003); doi: 10.1117/12.518782
Proc. SPIE 5136, Kinetics of photoluminescence of porous silicon studied by photo-luminescence excitation spectroscopy and time-resolved spectroscopy, 0000 (22 October 2003); doi: 10.1117/12.518789
Crystalline Nanostructures and Thin Films
Proc. SPIE 5136, Studies of piezoresistance in Ge-Si whiskers at cryogenic temperatures, 0000 (22 October 2003); doi: 10.1117/12.519666
Proc. SPIE 5136, Control of ferromagnetism in Cd1-xMnx Te quantum wells, 0000 (22 October 2003); doi: 10.1117/12.519671
Proc. SPIE 5136, DC and AC conductivity of PbSe/Si structures grown by pulsed laser ablation methods, 0000 (22 October 2003); doi: 10.1117/12.519672
Proc. SPIE 5136, HgCdTe buried planar structures fabricated by liquid phase epitaxy, 0000 (22 October 2003); doi: 10.1117/12.519673
Proc. SPIE 5136, Assessment of the LPE growth of HgCdTe from Te-rich melt by the tipping method, 0000 (22 October 2003); doi: 10.1117/12.519674
Organic Materials for Electronics
Proc. SPIE 5136, Solid polymeric electrolytes obtained from modified natural polymers, 0000 (22 October 2003); doi: 10.1117/12.519675
Proc. SPIE 5136, Kinetic analysis of long-lived luminescence in modified epoxy resins, 0000 (22 October 2003); doi: 10.1117/12.519676
Proc. SPIE 5136, Paracrystalline nature of saccharose- and anthracene-based carbons studied by wide-angle scattering, 0000 (22 October 2003); doi: 10.1117/12.519677
Proc. SPIE 5136, Photoluminescence of PPV (poly(p-phenylene vinylene)) layers under steady state and pulsed excitation, 0000 (22 October 2003); doi: 10.1117/12.519742
Proc. SPIE 5136, Temperature enhancement of photoactivity of N-triphenylmethylsalicylidene imine in solid state, 0000 (22 October 2003); doi: 10.1117/12.519743
Proc. SPIE 5136, Spectrally resolved thermoluminescence data analysis by surface fitting, 0000 (22 October 2003); doi: 10.1117/12.519744
Optoelectronic Devices
Proc. SPIE 5136, High-power quantum cascade lasers (QCLs) grown by GasMBE, 0000 (22 October 2003); doi: 10.1117/12.519745
Proc. SPIE 5136, Design of possible structures of nitride vertical-cavity surface-emitting lasers, 0000 (22 October 2003); doi: 10.1117/12.519746
Proc. SPIE 5136, New mid-infrared optical sources based on isotropic semiconductors (zinc selenide and gallium arsenide) using total internal reflection quasi-phase-matching, 0000 (22 October 2003); doi: 10.1117/12.519751
Proc. SPIE 5136, Single-photon devices in quantum cryptography, 0000 (22 October 2003); doi: 10.1117/12.519752
Proc. SPIE 5136, Electrochromic multilayer device, 0000 (22 October 2003); doi: 10.1117/12.519753
Proc. SPIE 5136, Simulation of threshold operation of GaInNAs diode lasers, 0000 (22 October 2003); doi: 10.1117/12.519754
Proc. SPIE 5136, Spectral detectivity and NETD of doping-spike PtSi-p-Si and HIP GeSi-Si detectors, 0000 (22 October 2003); doi: 10.1117/12.519757
Proc. SPIE 5136, Influence of performances of environment on utmost parameters of an ideal thermal imager, 0000 (22 October 2003); doi: 10.1117/12.519760
Proc. SPIE 5136, HgCdTe epilayers on GaAs: growth and devices, 0000 (22 October 2003); doi: 10.1117/12.519761
Proc. SPIE 5136, Analysis of VLWIR HgCdTe photodiode performance, 0000 (22 October 2003); doi: 10.1117/12.519764
Proc. SPIE 5136, Conductivity anisotropy of CdHgTe MBE layers with a periodic surface microrelief, 0000 (22 October 2003); doi: 10.1117/12.519765
Proc. SPIE 5136, Radiation effects in photoconductive MCT MBE heterostructures, 0000 (22 October 2003); doi: 10.1117/12.519767
Proc. SPIE 5136, Doping control in HgCdTe epitaxial layers, 0000 (22 October 2003); doi: 10.1117/12.519770
Proc. SPIE 5136, Type conductivity conversion in p-CdxHg1-xTe, 0000 (22 October 2003); doi: 10.1117/12.519772
Proc. SPIE 5136, Photoelectrical phenomenon in n+-p-junctions based on HgCdTe, 0000 (22 October 2003); doi: 10.1117/12.519774
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