PROCEEDINGS VOLUME 5256
PHOTOMASK TECHNOLOGY | 9-12 SEPTEMBER 2003
23rd Annual BACUS Symposium on Photomask Technology
IN THIS VOLUME

0 Sessions, 142 Papers, 0 Presentations
OPC  (4)
Blanks  (3)
Inspection  (3)
Cleaning  (2)
Repair  (3)
Metrology  (4)
PHOTOMASK TECHNOLOGY
9-12 September 2003
Monterey, California, United States
Pattern Generation
Proc. SPIE 5256, DUV mask writer for BEOL 90-nm technology layers, 0000 (17 December 2003); doi: 10.1117/12.518051
Proc. SPIE 5256, DUV ALTA system aerial image enhancement for improved pattern fidelity, 0000 (17 December 2003); doi: 10.1117/12.518218
Proc. SPIE 5256, DUV laser lithography for photomask fabrication, 0000 (17 December 2003); doi: 10.1117/12.518269
Proc. SPIE 5256, Cell projection EB exposure for Giga DRAM device mask, 0000 (17 December 2003); doi: 10.1117/12.518332
Proc. SPIE 5256, Simulation of mask CD variation for different local densities with in-house developed e-beam lithography simulator, 0000 (17 December 2003); doi: 10.1117/12.518028
Pattern Transfer
Proc. SPIE 5256, New method for approaching the loading-free process for photomask Cr etching, 0000 (17 December 2003); doi: 10.1117/12.517842
Proc. SPIE 5256, Optimization of a 65-nm alternating phase-shift quartz etch process, 0000 (17 December 2003); doi: 10.1117/12.518231
Proc. SPIE 5256, Integrated phase shift measurements for advanced mask etch process control, 0000 (17 December 2003); doi: 10.1117/12.518272
Proc. SPIE 5256, Process monitoring of chrome dry-etching with RF sensor for reticle production beyond 90-nm node, 0000 (17 December 2003); doi: 10.1117/12.518337
Advancing RETs
Proc. SPIE 5256, Vortex via validation, 0000 (17 December 2003); doi: 10.1117/12.517872
Proc. SPIE 5256, Implementing AAPSM in 90-nm product with practical image imbalance correction, 0000 (17 December 2003); doi: 10.1117/12.518029
Proc. SPIE 5256, Full-chip application for SRAM gate at 100-nm node and beyond using chromeless phase lithography, 0000 (17 December 2003); doi: 10.1117/12.518014
Proc. SPIE 5256, Template fabrication for sub-80-nm contact hole patterning using step and flash imprint lithography, 0000 (17 December 2003); doi: 10.1117/12.518307
Proc. SPIE 5256, Litho-and-mask concurrent approach to the critical issues for proximity electron lithography, 0000 (17 December 2003); doi: 10.1117/12.518816
Data Preparation
Proc. SPIE 5256, Efficient mask data preparation for variable shaped e-beam writing system focusing on memory devices, 0000 (17 December 2003); doi: 10.1117/12.517828
Proc. SPIE 5256, Parallel processing approaches in RET and MDP: new hybrid multithreading and distributed technology for optimum throughput in a hierarchical flow, 0000 (17 December 2003); doi: 10.1117/12.518230
Proc. SPIE 5256, OASIS vs. GDSII stream format efficiency, 0000 (17 December 2003); doi: 10.1117/12.518271
Proc. SPIE 5256, Integrating design data with manufacturing data: why you want to use a universal data model (UDM), 0000 (17 December 2003); doi: 10.1117/12.518277
Proc. SPIE 5256, Shuttle mask floorplanning, 0000 (17 December 2003); doi: 10.1117/12.517568
157-nm Mask Tech
Proc. SPIE 5256, Passivation of the 157-nm pellicle with nanometer thin films, 0000 (17 December 2003); doi: 10.1117/12.517506
Proc. SPIE 5256, 157-nm attenuated phase-shift mask materials with irradiation stability, 0000 (17 December 2003); doi: 10.1117/12.517893
Proc. SPIE 5256, Development of a new PSM film system for 157-nm extensible to high-transmission 193 nm lithography, 0000 (17 December 2003); doi: 10.1117/12.518339
Proc. SPIE 5256, Porous silica pellicle frame, 0000 (17 December 2003); doi: 10.1117/12.518562
OPC
Proc. SPIE 5256, Improvement of empirical OPC model robustness using full-chip aerial image analysis, 0000 (17 December 2003); doi: 10.1117/12.518055
Proc. SPIE 5256, Focus latitude optimization for model-based OPC, 0000 (17 December 2003); doi: 10.1117/12.517996
Proc. SPIE 5256, Model-based methodology for reducing OPC output pattern complexity, 0000 (17 December 2003); doi: 10.1117/12.518331
Proc. SPIE 5256, OPC model generation procedure for different reticle vendors, 0000 (17 December 2003); doi: 10.1117/12.518219
Litho Applications
Proc. SPIE 5256, Effects of reticle reflectance on lithography, 0000 (17 December 2003); doi: 10.1117/12.516925
Proc. SPIE 5256, Mask pattern fidelity quantification, 0000 (17 December 2003); doi: 10.1117/12.518041
Proc. SPIE 5256, Printability of 2D mask quality, 0000 (17 December 2003); doi: 10.1117/12.518032
Proc. SPIE 5256, Analysis of etched quartz solutions for 65-nm node critical layer lithography, 0000 (17 December 2003); doi: 10.1117/12.518322
Proc. SPIE 5256, Near-0.3 k1 full pitch range contact hole patterning using chromeless phase lithography (CPL), 0000 (17 December 2003); doi: 10.1117/12.518308
Proc. SPIE 5256, Interferometric-probe aberration monitors: aerial image and in-resist performance, 0000 (17 December 2003); doi: 10.1117/12.518603
Mask Business and Management
Proc. SPIE 5256, A common base for mask cost of ownership, 0000 (17 December 2003); doi: 10.1117/12.518237
Proc. SPIE 5256, Migration of 90-nm mask and wafer lithography learning into 130-nm mask production to improve performance and yield, 0000 (17 December 2003); doi: 10.1117/12.517877
Proc. SPIE 5256, Mask industry assessment: 2003, 0000 (17 December 2003); doi: 10.1117/12.517438
Resist Process
Proc. SPIE 5256, 90-nm mask making processes using the positive tone chemically amplified resist FEP171, 0000 (17 December 2003); doi: 10.1117/12.518043
Proc. SPIE 5256, Resist process optimization for a DUV laser pattern generator, 0000 (17 December 2003); doi: 10.1117/12.518058
Proc. SPIE 5256, Improving global CD uniformity by optimizing post-exposure bake and develop sequences, 0000 (17 December 2003); doi: 10.1117/12.518479
Proc. SPIE 5256, Automated CD-error compensation for negative-tone chemically amplified resists by zone-controlled post-exposure bake, 0000 (17 December 2003); doi: 10.1117/12.517202
Proc. SPIE 5256, Dehydration bake effects with UV/O3 treatment for 130-nm node PSM processing, 0000 (17 December 2003); doi: 10.1117/12.517977
Blanks
Proc. SPIE 5256, Creating direct-write gray-scale photomasks with bimetallic thin film thermal resists, 0000 (17 December 2003); doi: 10.1117/12.518213
Proc. SPIE 5256, Improved phase uniformity control using a new AAPSM etch stop layer technique, 0000 (17 December 2003); doi: 10.1117/12.518130
Poster Session
Proc. SPIE 5256, Reticle surface contaminants and their relationship to subpellicle particle formation, 0000 (17 December 2003); doi: 10.1117/12.518105
Defects/Yield
Proc. SPIE 5256, 193-nm haze contamination: a close relationship between mask and its environment, 0000 (17 December 2003); doi: 10.1117/12.518262
Proc. SPIE 5256, Yield Mask: the latest developments and their application in a mask house production environment, 0000 (17 December 2003); doi: 10.1117/12.517083
Proc. SPIE 5256, Enhanced dispositioning of reticle defects for advanced masks using virtual stepper with automated defect severity scoring, 0000 (17 December 2003); doi: 10.1117/12.518211
Inspection
Proc. SPIE 5256, Results from a new reticle defect inspection platform, 0000 (17 December 2003); doi: 10.1117/12.518241
Proc. SPIE 5256, Investigation of smart inspection of critical layer reticles using additional designer data to determine defect significance, 0000 (17 December 2003); doi: 10.1117/12.518071
Proc. SPIE 5256, Aerial-image-based off-focus inspection: lithography process window analysis during mask inspection, 0000 (17 December 2003); doi: 10.1117/12.517815
Cleaning
Proc. SPIE 5256, Comparative evaluation of mask cleaning performance, 0000 (17 December 2003); doi: 10.1117/12.518030
Repair
Proc. SPIE 5256, Material removal strategies and results for 193-nm lithography using FIB mask repair, 0000 (17 December 2003); doi: 10.1117/12.518546
EUV Technology
Proc. SPIE 5256, EUV substrate and blank inspection with confocal microscopy, 0000 (17 December 2003); doi: 10.1117/12.518388
Proc. SPIE 5256, EUV mask making: an approach based on the direct patterning of the EUV reflector, 0000 (17 December 2003); doi: 10.1117/12.518259
Proc. SPIE 5256, Optimization of EUVL reticle thickness for image placement accuracy, 0000 (17 December 2003); doi: 10.1117/12.518062