INTEGRATED OPTOELECTRONIC DEVICES 2004
26-29 January 2004
San Jose, CA, United States
Ultrafast Phenomena in Nanostructure Materials I
Proc. SPIE 5352, Femtosecond investigation of carbon nanotubes, 0000 (16 June 2004); doi: 10.1117/12.525390
Proc. SPIE 5352, Optical characteristics of hexagonal and cubic GaN self-assembled quantum dots, 0000 (16 June 2004); doi: 10.1117/12.526103
Proc. SPIE 5352, Femtosecond near-field spectroscopy of single quantum dots, 0000 (16 June 2004); doi: 10.1117/12.533179
Proc. SPIE 5352, Spectroscopy and dynamics of GaSe nanoparticles and nanoparticle aggregates, 0000 (16 June 2004); doi: 10.1117/12.531337
Proc. SPIE 5352, Using diverse theoretical approaches to study electron transport through organic molecules, 0000 (16 June 2004); doi: 10.1117/12.531618
Proc. SPIE 5352, Time-resolved photoluminescence of the ZnO nanorods: size and temperature dependences, 0000 (16 June 2004); doi: 10.1117/12.531992
Ultrafast Phenomena in Nanostructure Materials II
Proc. SPIE 5352, Ultrafast surface plasmon resonance Landau damping and electron kinetics in metal nanoparticles, 0000 (16 June 2004); doi: 10.1117/12.532218
Proc. SPIE 5352, Optical properties and carrier dynamics of InP quantum dots embedded in GaP, 0000 (16 June 2004); doi: 10.1117/12.527714
Proc. SPIE 5352, Ultrafast dephasing of surface plasmon excitation in metal nanoparticles, 0000 (16 June 2004); doi: 10.1117/12.533183
Proc. SPIE 5352, Nano-ultrasonics: science and technology, 0000 (16 June 2004); doi: 10.1117/12.528182
Proc. SPIE 5352, Picosecond heat pulse propagation in single-wall carbon nanotubes, 0000 (16 June 2004); doi: 10.1117/12.528627
Non-linear Effects in Carbon Nanotubes
Proc. SPIE 5352, Third-harmonic generation in carbon nanotubes: theory and experiment, 0000 (16 June 2004); doi: 10.1117/12.527537
Proc. SPIE 5352, Linear and nonlinear optical properties of single-wall carbon nanotubes, 0000 (16 June 2004); doi: 10.1117/12.527743
Ultrafast Dynamics in Wide-Bandgap Semiconductors I
Proc. SPIE 5352, Ultrafast intersubband transitions in GaN/AlGaN heterostructures at ~1.55-µm wavelength, 0000 (16 June 2004); doi: 10.1117/12.528903
Proc. SPIE 5352, Development of trains of ultrashort strain solitons in sapphire and ruby, 0000 (16 June 2004); doi: 10.1117/12.529170
Proc. SPIE 5352, Ultrafast carrier relaxation in group-III nitride multiple quantum wells, 0000 (16 June 2004); doi: 10.1117/12.529426
Ultrafast Dynamics in Wide-Bandgap Semiconductors II
Proc. SPIE 5352, Generation of color centers by femtosecond laser pulses in wide-bandgap materials, 0000 (16 June 2004); doi: 10.1117/12.530028
Proc. SPIE 5352, THz radiation and acoustic phonon pulse wave from GaN-based light-emitting diode structures generated by ultrashort-pulse lasers, 0000 (16 June 2004); doi: 10.1117/12.531339
Proc. SPIE 5352, Time-resolved photoluminescence studies of Si- and Mg-doped AlN epilayers, 0000 (16 June 2004); doi: 10.1117/12.525752
THz Spectroscopy
Proc. SPIE 5352, Picosecond transient photoconductivity in organic molecular crystals, 0000 (16 June 2004); doi: 10.1117/12.526915
Proc. SPIE 5352, Far-infrared phonon-polariton dispersion studied by THz time-domain spectroscopy, 0000 (16 June 2004); doi: 10.1117/12.531057
Proc. SPIE 5352, Electronic charge transport in sapphire studied by optical-pump/THz-probe spectroscopy, 0000 (16 June 2004); doi: 10.1117/12.532505
Ultrafast Carrier and Lattice Dynamics I
Proc. SPIE 5352, Picosecond structural dynamics in photoexcited semiconductors probed by time-resolved x-ray diffraction, 0000 (16 June 2004); doi: 10.1117/12.523554
Proc. SPIE 5352, Generation and propagation of THz monochromatic acoustic phonons in gallium arsenide, 0000 (16 June 2004); doi: 10.1117/12.526765
Ultrafast Carrier and Lattice Dynamics II
Proc. SPIE 5352, Thermal stability of ion-irradiated InGaAs with subpicosecond carrier lifetime, 0000 (16 June 2004); doi: 10.1117/12.527679
Proc. SPIE 5352, Picosecond vibrational dynamics and stability of deuterated amorphous silicon thin films, 0000 (16 June 2004); doi: 10.1117/12.527699
Proc. SPIE 5352, Two-dimensional Fourier transform optical spectroscopy of GaAs quantum wells, 0000 (16 June 2004); doi: 10.1117/12.528538
Proc. SPIE 5352, Coherent phonon spectroscopy of semiconductor-metal interfaces, 0000 (16 June 2004); doi: 10.1117/12.528718
Proc. SPIE 5352, Evidence of strong phonon-assisted resonant intervalley up-transfer for electroncs in type-II GaAs/AIAs superlattices, 0000 (16 June 2004); doi: 10.1117/12.529066
Proc. SPIE 5352, Effects of collective excitations and scatterings in quantum well intersubband transitions, 0000 (16 June 2004); doi: 10.1117/12.529574
Proc. SPIE 5352, Ultrafast carrier dynamics in highly resistive InP and InGaAs produced by ion implantation, 0000 (16 June 2004); doi: 10.1117/12.526398
Spin Dynamics in Semiconductors
Proc. SPIE 5352, Spins...free of charge, 0000 (16 June 2004); doi: 10.1117/12.527098
Ultrafast Devices and Lasers I
Proc. SPIE 5352, Fabrication and performance of hybrid photoconductive devices based on freestanding LT-GaAs, 0000 (16 June 2004); doi: 10.1117/12.526429
Proc. SPIE 5352, Coherent vs. incoherent charge transport in semiconductor quantum cascade structures, 0000 (16 June 2004); doi: 10.1117/12.527512
Proc. SPIE 5352, Dynamics of stimulated emission in InAs quantum dot laser structures measured in pump-probe experiments, 0000 (16 June 2004); doi: 10.1117/12.527694
Ultrafast Devices and Lasers II
Proc. SPIE 5352, Intersubband transitions in GaN/AlN quantum wells for Tb/s optical switching, 0000 (16 June 2004); doi: 10.1117/12.528193
Proc. SPIE 5352, Picosecond electrical excitation of a two-dimensional electron gas, 0000 (16 June 2004); doi: 10.1117/12.533181
Proc. SPIE 5352, Ultrafast optoelectronic devices using laser-assisted field emission, 0000 (16 June 2004); doi: 10.1117/12.529769
Proc. SPIE 5352, Picosecond range switching of a GaAs avalanche transistor due to bulk carrier generation by avalanching Gunn domains, 0000 (16 June 2004); doi: 10.1117/12.520782
Proc. SPIE 5352, Single-HBT-based optical receiver front-end, 0000 (16 June 2004); doi: 10.1117/12.529860
Poster Session
Proc. SPIE 5352, Subpicosecond Raman studies of nonequilibrium electron transport in an In0.4Ga0.6N epilayer grown on GaN, 0000 (16 June 2004); doi: 10.1117/12.528322
Proc. SPIE 5352, Electron and hole velocity overshoots in an Al0.3Ga0.7As-based p-i-n semiconductor nanostructure observed by subpicosecond time-resolved Raman spectroscopy, 0000 (16 June 2004); doi: 10.1117/12.528339
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