PROCEEDINGS VOLUME 5365
INTEGRATED OPTOELECTRONIC DEVICES 2004 | 26-29 JANUARY 2004
Novel In-Plane Semiconductor Lasers III
IN THIS VOLUME

0 Sessions, 33 Papers, 0 Presentations
INTEGRATED OPTOELECTRONIC DEVICES 2004
26-29 January 2004
San Jose, CA, United States
Near-IR and Red Lasers
Proc. SPIE 5365, Benefits of quantum well intermixing in high power diode lasers, 0000 (11 May 2004); doi: 10.1117/12.530263
Proc. SPIE 5365, 1550-nm single-mode grating-outcoupled surface emitting lasers, 0000 (11 May 2004); doi: 10.1117/12.530764
Proc. SPIE 5365, Dual-wavelength semiconductor laser with 191-nm mode spacing, 0000 (11 May 2004); doi: 10.1117/12.525582
Proc. SPIE 5365, High-speed GaInNAs laser diodes, 0000 (11 May 2004); doi: 10.1117/12.533277
Proc. SPIE 5365, Thermal annealing effect on InGaAsN/GaAs lasers, 0000 (11 May 2004); doi: 10.1117/12.529120
Quantum Dots I
Proc. SPIE 5365, High-power ultra-fast single- and multi-mode quantum dot lasers with superior beam profile, 0000 (11 May 2004); doi: 10.1117/12.528296
Proc. SPIE 5365, High-brightness GaInAs/(Al)GaAs quantum dot tapered lasers at 980 nm with a high wavelength stability, 0000 (11 May 2004); doi: 10.1117/12.529060
Proc. SPIE 5365, Nanoengineered InAs quantum dot active medium for laser diodes, 0000 (11 May 2004); doi: 10.1117/12.529717
Proc. SPIE 5365, Ultrafast optical signal processing based on quantum dot semiconductor optical amplifiers: theory and experiment, 0000 (11 May 2004); doi: 10.1117/12.533278
Quantum Dots II
Proc. SPIE 5365, Carrier distribution, spontaneous emission, and gain in self-assembled quantum dot lasers, 0000 (11 May 2004); doi: 10.1117/12.530429
Proc. SPIE 5365, Saturable absorber characteristics in quantum dot lasers, 0000 (11 May 2004); doi: 10.1117/12.528789
Proc. SPIE 5365, Quantum dot intersublevel light emitters, 0000 (11 May 2004); doi: 10.1117/12.529064
High-Power Lasers
Proc. SPIE 5365, Slab-coupled optical waveguide lasers: a review, 0000 (11 May 2004); doi: 10.1117/12.531078
Proc. SPIE 5365, Angled broad-area semiconductor lasers to emit high output power with good beam quality, 0000 (11 May 2004); doi: 10.1117/12.525576
Proc. SPIE 5365, Low-divergence-angle 808-nm GaAlAs/GaAs laser diode using an asymmetric-cladding structure, 0000 (11 May 2004); doi: 10.1117/12.528329
Proc. SPIE 5365, High-power red laser diode for recordable DVDs, 0000 (11 May 2004); doi: 10.1117/12.530179
Proc. SPIE 5365, 11-W CW 100-µm fiber-coupled 971-nm Al-free active region pump source, 0000 (11 May 2004); doi: 10.1117/12.529069
Proc. SPIE 5365, High-brightness lasers based on internal focus unstable resonators, 0000 (11 May 2004); doi: 10.1117/12.532559
Mid-IR and THz Lasers
Proc. SPIE 5365, Single-mode InP-based quantum cascade lasers for applications in trace-gas sensing, 0000 (11 May 2004); doi: 10.1117/12.528964
Proc. SPIE 5365, Intervalence-band THz laser in selectively-doped semiconductor structure, 0000 (11 May 2004); doi: 10.1117/12.528383
Proc. SPIE 5365, Terahertz quantum cascade lasers using resonant-phonon depopulation and metal-metal waveguides, 0000 (11 May 2004); doi: 10.1117/12.530087
Mid-IR Lasers II
Proc. SPIE 5365, Physical processes and lasing properties of GaAs/(Al,Ga)As quantum-cascade structures and lasers, 0000 (11 May 2004); doi: 10.1117/12.531674
Proc. SPIE 5365, Recent progress in development of mid-IR interband cascade lasers, 0000 (11 May 2004); doi: 10.1117/12.529714
Proc. SPIE 5365, Quantum Cascade Photonic-Crystal Microlasers, 0000 (11 May 2004); doi: 10.1117/12.532586
Mid-IR Lasers III
Proc. SPIE 5365, High-power room-temperature continuous wave operation of type-I In(Al)GaAsSb/GaSb diode lasers at wavelengths greater than 2.5 µm, 0000 (11 May 2004); doi: 10.1117/12.528984
Proc. SPIE 5365, Mid-infrared "W" diode lasers and their application to methane sensing, 0000 (11 May 2004); doi: 10.1117/12.529381
Proc. SPIE 5365, Doping-induced type-II to type-I transition and mid-IR optical gain in InAs/AlSb quantum wells, 0000 (11 May 2004); doi: 10.1117/12.530465
UV and Blue Lasers I
Proc. SPIE 5365, Nitride-based in-plane laser diodes with vertical currrent path, 0000 (11 May 2004); doi: 10.1117/12.529087
Proc. SPIE 5365, Ultraviolet InGaN, AlGaN, and InAIGaN multiple-quantum-well laser diodes, 0000 (11 May 2004); doi: 10.1117/12.529505
UV and Blue Lasers II
Proc. SPIE 5365, High-power blue-violet laser diode fabricated on a GaN substrate, 0000 (11 May 2004); doi: 10.1117/12.533186
Proc. SPIE 5365, High-power pulse-current-operated violet light emitting lasers grown on bulk GaN substrates, 0000 (11 May 2004); doi: 10.1117/12.523580
Proc. SPIE 5365, Over 100-mW blue-violet laser diodes for Blu-ray Disc system, 0000 (11 May 2004); doi: 10.1117/12.533187
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