PROCEEDINGS VOLUME 5366
INTEGRATED OPTOELECTRONIC DEVICES 2004 | 26-29 JANUARY 2004
Light-Emitting Diodes: Research, Manufacturing, and Applications VIII
INTEGRATED OPTOELECTRONIC DEVICES 2004
26-29 January 2004
San Jose, CA, United States
Resonant Cavity LEDs and Techniques for Enhanced Light Extraction
Proc. SPIE 5366, Recent results and latest views on microcavity LEDs, 0000 (21 June 2004); doi: 10.1117/12.537630
Proc. SPIE 5366, Optical cavity effects in InGaN/GaN quantum-well-heterostructure flip-chip light-emitting diodes, 0000 (21 June 2004); doi: 10.1117/12.520571
Proc. SPIE 5366, Si-based resonant cavity light-emitting devices, 0000 (21 June 2004); doi: 10.1117/12.529135
Proc. SPIE 5366, High-performance resonant cavity light-emitting diode for plastic optical fiber application, 0000 (21 June 2004); doi: 10.1117/12.525285
Visible-Spectrum AlInGaP Leds
Proc. SPIE 5366, InGaAlP thin film LEDs with high luminous efficiency, 0000 (21 June 2004); doi: 10.1117/12.528938
Proc. SPIE 5366, Light-emitting diodes with integrated omnidirectionally reflective contacts, 0000 (21 June 2004); doi: 10.1117/12.527952
Proc. SPIE 5366, AlGaInP light-emitting diode with metal reflector structure, 0000 (21 June 2004); doi: 10.1117/12.527373
White LEDs for Solid-State Lighting
Proc. SPIE 5366, Highly efficient UV-based conversion LEDs for the generation of saturated colors with improved eye safety, 0000 (21 June 2004); doi: 10.1117/12.530295
Proc. SPIE 5366, Development of solid state light sources based on II-VI semiconductor quantum dots, 0000 (21 June 2004); doi: 10.1117/12.527967
Proc. SPIE 5366, Optimization and performance of AlGaN-based multi-quantum-well deep-UV LEDs, 0000 (21 June 2004); doi: 10.1117/12.529659
Proc. SPIE 5366, Analysis of nitride-based quantum well LEDs and novel white LED design, 0000 (21 June 2004); doi: 10.1117/12.524424
GaN-Based LEDs
Proc. SPIE 5366, Absorption in InGaN-on-sapphire LED structures: comparison between photocurrent measurement method (PMM) and photothermal deflection spectroscopy (PDS), 0000 (21 June 2004); doi: 10.1117/12.528783
Proc. SPIE 5366, Influence of Mg doping profile on the electroluminescence properties of GaInN multiple-quantum-well light-emitting diodes, 0000 (21 June 2004); doi: 10.1117/12.527684
Organic LEDs and Alternative Materials for LEDs
Proc. SPIE 5366, Si-based rare-earth-doped light-emitting devices, 0000 (21 June 2004); doi: 10.1117/12.528989
Proc. SPIE 5366, Materials and structural design of a mid-infrared light-emitting device, 0000 (21 June 2004); doi: 10.1117/12.528899
High-Power LEDs for Illumination
Proc. SPIE 5366, Estimating junction temperature of high-flux white LEDs, 0000 (21 June 2004); doi: 10.1117/12.537628
Proc. SPIE 5366, Beyond the limitations of today's LED packages: optimizing high-brightness LED performance by a comprehensive systems design approach, 0000 (21 June 2004); doi: 10.1117/12.529437
Proc. SPIE 5366, New material options for light-emitting diode packaging, 0000 (21 June 2004); doi: 10.1117/12.529192
Fabrication and Characterization of Advanced LEDs
Proc. SPIE 5366, Investigation of AlGaN buffer layers on sapphire grown by MOVPE, 0000 (21 June 2004); doi: 10.1117/12.529952
Proc. SPIE 5366, Reflectivity fitting for accurate thickness and compositional determination in RCLEDs, 0000 (21 June 2004); doi: 10.1117/12.529654
Proc. SPIE 5366, Scribing of GaN wafer for white LED by water-jet-guided laser, 0000 (21 June 2004); doi: 10.1117/12.529012
Proc. SPIE 5366, High-throughput scribing for the manufacture of LED components, 0000 (21 June 2004); doi: 10.1117/12.531685
Proc. SPIE 5366, Novel LEDs using unique lateral p-n junctions on GaAs (311)A patterned substrates, 0000 (21 June 2004); doi: 10.1117/12.547116
GaN-Based LEDs
Proc. SPIE 5366, 3D simulation and analysis of AlGaN/GaN ultraviolet light-emittings diodes, 0000 (21 June 2004); doi: 10.1117/12.543266
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