PROCEEDINGS VOLUME 5374
MICROLITHOGRAPHY 2004 | 22-27 FEBRUARY 2004
Emerging Lithographic Technologies VIII
MICROLITHOGRAPHY 2004
22-27 February 2004
Santa Clara, California, United States
Keynote Session
Proc. SPIE 5374, The new, new limits of optical lithography, 0000 (20 May 2004); doi: 10.1117/12.546201
Proc. SPIE 5374, In the end it's the bottom line that counts, 0000 (20 May 2004); doi: 10.1117/12.546202
Proc. SPIE 5374, Electron-beam and emerging lithography for the magnetic recording industry, 0000 (20 May 2004); doi: 10.1117/12.536002
EUV System Overview
Proc. SPIE 5374, Progress in the ASML EUV program, 0000 (20 May 2004); doi: 10.1117/12.534784
Proc. SPIE 5374, Process latitude measurements and their implications for CD control in EUV lithography, 0000 (20 May 2004); doi: 10.1117/12.537366
Proc. SPIE 5374, EUV imaging: an aerial image study, 0000 (20 May 2004); doi: 10.1117/12.537338
Proc. SPIE 5374, EUV interferometric testing and alignment of the 0.3-NA MET optic, 0000 (20 May 2004); doi: 10.1117/12.546199
Proc. SPIE 5374, Shot noise, LER, and quantum efficiency of EUV photoresists, 0000 (20 May 2004); doi: 10.1117/12.536411
EUV Optics/Materials I
Proc. SPIE 5374, Determination of the flare specification and methods to meet the CD control requirements for the 32-nm node using EUVL, 0000 (20 May 2004); doi: 10.1117/12.536024
Proc. SPIE 5374, Optimized glass-ceramic substrate materials for EUVL applications, 0000 (20 May 2004); doi: 10.1117/12.535193
Proc. SPIE 5374, Low-stress and high-reflectivity molybdenum/silicon multilayers deposited by low-pressure rotary magnet cathode sputtering for EUV lithography, 0000 (20 May 2004); doi: 10.1117/12.536075
Proc. SPIE 5374, Radiation-induced synergistic effects of athermal and thermal mechanisms on erosion and surface evolution of advanced electrode and condenser optics materials, 0000 (20 May 2004); doi: 10.1117/12.534439
Proc. SPIE 5374, Experimental investigation of materials damage induced by hot Xe plasma in EUV lithography devices, 0000 (20 May 2004); doi: 10.1117/12.534252
EUV Source I
Proc. SPIE 5374, EUV source power and lifetime: the most critical issues for EUV lithography, 0000 (20 May 2004); doi: 10.1117/12.535410
Proc. SPIE 5374, High-power short-pulse laser modules for laser-produced-plasma EUV source, 0000 (20 May 2004); doi: 10.1117/12.534015
Proc. SPIE 5374, Performance of a 10-kHz laser-produced-plasma light source for EUV lithography, 0000 (20 May 2004); doi: 10.1117/12.536076
Proc. SPIE 5374, Performance and scaling of a dense plasma focus light source for EUV lithography, 0000 (20 May 2004); doi: 10.1117/12.538690
Nanoimprint I
Proc. SPIE 5374, Fabrication process of molecular memory circuits by nanoimprint lithography, 0000 (20 May 2004); doi: 10.1117/12.540898
Proc. SPIE 5374, Nanostructuring of polymers by hot embossing lithography, 0000 (20 May 2004); doi: 10.1117/12.535741
Proc. SPIE 5374, Four-inch photocurable nanoimprint lithography using NX-2000 nanoimprinter, 0000 (20 May 2004); doi: 10.1117/12.537232
Proc. SPIE 5374, Current status of Nanonex nanoimprint solutions, 0000 (20 May 2004); doi: 10.1117/12.537241
Proc. SPIE 5374, Step and Repeat UV nanoimprint lithography tools and processes, 0000 (20 May 2004); doi: 10.1117/12.538733
Proc. SPIE 5374, Development of imprint materials for the Step and Flash Imprint Lithography process, 0000 (20 May 2004); doi: 10.1117/12.538734
Advanced mask I
Proc. SPIE 5374, Production of low-thermal-expansion EUVL mask blanks with low-defect multilayer, buffer, and absorber, 0000 (20 May 2004); doi: 10.1117/12.533292
Proc. SPIE 5374, EUVL ML blank fiducial mark generation via local heating, 0000 (20 May 2004); doi: 10.1117/12.537242
Proc. SPIE 5374, Development of phase shift masks for extreme ultraviolet lithography and optical evaluation of phase shift materials, 0000 (20 May 2004); doi: 10.1117/12.535503
Proc. SPIE 5374, Actinic detection of multilayer defects on EUV mask blanks using LPP light source and dark-field imaging, 0000 (20 May 2004); doi: 10.1117/12.534915
Advanced Mask II
Proc. SPIE 5374, Effect of absorber material and mask pattern correction on pattern fidelity in EUV lithography, 0000 (20 May 2004); doi: 10.1117/12.534981
Proc. SPIE 5374, Architectural choices for EUV lithography masks: patterned absorbers and patterned reflectors, 0000 (20 May 2004); doi: 10.1117/12.539074
Proc. SPIE 5374, Modeling for sub-50-nm x-ray application with phase masks, 0000 (20 May 2004); doi: 10.1117/12.535422
Nanoimprint II
Proc. SPIE 5374, Nanofabrication with water-dissolvable polymer masks of polyvinyl alcohol (PVA): MxL, 0000 (20 May 2004); doi: 10.1117/12.534928
Proc. SPIE 5374, Combined nanoimprint and photolithography technique with a hybrid mold, 0000 (20 May 2004); doi: 10.1117/12.536121
Proc. SPIE 5374, Mesoscale modeling for SFIL simulating polymerization kinetics and densification, 0000 (20 May 2004); doi: 10.1117/12.536216
Proc. SPIE 5374, Microsystems manufacturing via embossing of photodefinable thermally sacrificial materials, 0000 (20 May 2004); doi: 10.1117/12.536277
Proc. SPIE 5374, Sub-80-nm contact hole patterning using Step and Flash Imprint Lithography, 0000 (20 May 2004); doi: 10.1117/12.537382
EUV Source II
Proc. SPIE 5374, Particle-cluster tin target for a high-conversion efficiency LPP source for EUVL, 0000 (20 May 2004); doi: 10.1117/12.535395
Proc. SPIE 5374, Development of magnetohydrodynamic computer modeling of gas-discharge EUV sources for microlithography, 0000 (20 May 2004); doi: 10.1117/12.536289
Proc. SPIE 5374, Theoretical simulation of extreme UV radiation source for lithography, 0000 (20 May 2004); doi: 10.1117/12.534989
Proc. SPIE 5374, Simulation and optimization of DPP hydrodynamics and radiation transport for EUV lithography devices, 0000 (20 May 2004); doi: 10.1117/12.534269
Proc. SPIE 5374, Compact laser-induced EUV source for metrology, 0000 (20 May 2004); doi: 10.1117/12.532871
Proc. SPIE 5374, Debris-free low-cost commercial EUV source for at-wavelength metrology, 0000 (20 May 2004); doi: 10.1117/12.533019
Emerging/Advanced Processing, Novel Applications
Proc. SPIE 5374, EUV resist imaging below 50 nm using coherent spatial filtering techniques, 0000 (20 May 2004); doi: 10.1117/12.535666
EPL I
Proc. SPIE 5374, Total performance of Nikon EB stepper R&D tool, 0000 (20 May 2004); doi: 10.1117/12.537008
Proc. SPIE 5374, Preliminary results of EB stepper in the application of 65-nm process, 0000 (20 May 2004); doi: 10.1117/12.534875
Proc. SPIE 5374, Performance and stability of electron projection lithography tool, 0000 (20 May 2004); doi: 10.1117/12.534892
Proc. SPIE 5374, Design rule of hole-layer for electron projection lithography, 0000 (20 May 2004); doi: 10.1117/12.534868
LEEPL I
Proc. SPIE 5374, LEEPL production tool: EBPrinter LEEPL-3000, 0000 (20 May 2004); doi: 10.1117/12.535109
Proc. SPIE 5374, Evaporated resist for the fabrication and replication of LEEPL mask, 0000 (20 May 2004); doi: 10.1117/12.535747
Proc. SPIE 5374, LEEPL (low-energy electron beam proximity-projection lithography) over-lay status, 0000 (20 May 2004); doi: 10.1117/12.536229
Proc. SPIE 5374, First via-hole TEG fabricated by using 90-nm CMOS technology and proximity electron lithography: electric and lithographic results, 0000 (20 May 2004); doi: 10.1117/12.534423
Novel Lithography Systems I
Proc. SPIE 5374, Near-field x-ray lithography to 15 nm, 0000 (20 May 2004); doi: 10.1117/12.529642
Proc. SPIE 5374, Shrink assist film for enhanced resolution (SAFIER) process for printing of 20-nm trench with high aspect ratio, 0000 (20 May 2004); doi: 10.1117/12.535647
Proc. SPIE 5374, Validation of lithography based on the controlled movement of light-emitting particles, 0000 (20 May 2004); doi: 10.1117/12.534355
Proc. SPIE 5374, Collimated laser-plasma lithography (CPL) for 90-nm and smaller contacts and vias, 0000 (20 May 2004); doi: 10.1117/12.534379