Keynote Presentation
Proc. SPIE 5375, Metrology requirements for lithography's next wave, 0000 (24 May 2004); doi: 10.1117/12.546916
Mask-Related Metrology I
Overlay and Registration Metrology I
Proc. SPIE 5375, A New Approach to Pattern Metrology, 0000 (24 May 2004); doi: 10.1117/12.539143
Proc. SPIE 5375, Scanner overlay mix and match matrix generation: capturing all sources of variation, 0000 (24 May 2004); doi: 10.1117/12.534359
Proc. SPIE 5375, High-resolution optical overlay metrology, 0000 (24 May 2004); doi: 10.1117/12.539028
Proc. SPIE 5375, Alignment in chromeless masks, 0000 (24 May 2004); doi: 10.1117/12.538224
Proc. SPIE 5375, Alignment mark signal simulation system for the optimum mark feature selection, 0000 (24 May 2004); doi: 10.1117/12.532808
Proc. SPIE 5375, Evaluation of alignment performance of different exposure tools under various CMP conditions, 0000 (24 May 2004); doi: 10.1117/12.535698
Proc. SPIE 5375, Overlay measurement tool up to 70-nm design rule, 0000 (24 May 2004); doi: 10.1117/12.535007
SEM/Scatterometry for Critical Dimension Metrology I
Proc. SPIE 5375, Reducing measurement uncertainty drives the use of multiple technologies for supporting metrology, 0000 (24 May 2004); doi: 10.1117/12.546880
SEM/Scatterometry for Critical Dimension Metrology II
Proc. SPIE 5375, Determination of optimal parameters for CD-SEM measurement of line-edge roughness, 0000 (24 May 2004); doi: 10.1117/12.535926
SEM/Scatterometry for Critical Dimension Metrology I
Proc. SPIE 5375, CD metrology for the 45-nm and 32-nm nodes, 0000 (24 May 2004); doi: 10.1117/12.536071
Critical Dimension Metrology/3D Extraction from Top Down Images
Proc. SPIE 5375, 90-nm lithography process characterization using ODP scatterometry technology, 0000 (24 May 2004); doi: 10.1117/12.536123
SEM/Scatterometry for Critical Dimension Metrology I
Proc. SPIE 5375, Quantification of CD-SEM wafer global charging effect on CD and CD uniformity of 193 nm lithography, 0000 (24 May 2004); doi: 10.1117/12.536147
Methods for Modeling
Proc. SPIE 5375, Dimensional metrology of resist lines using a SEM model-based library approach, 0000 (24 May 2004); doi: 10.1117/12.536871
Proc. SPIE 5375, A new analysis strategy for CD metrology using rapid photo goniometry method, 0000 (24 May 2004); doi: 10.1117/12.533031
Proc. SPIE 5375, Improved overlay metrology device correlation on 90-nm logic processes, 0000 (24 May 2004); doi: 10.1117/12.534522
Proc. SPIE 5375, Effective-medium model for fast evaluation of scatterometric measurements on gratings, 0000 (24 May 2004); doi: 10.1117/12.535147
Proc. SPIE 5375, A simple robust bias-free method of calculating CD-SEM resolution, 0000 (24 May 2004); doi: 10.1117/12.535295
Proc. SPIE 5375, Usage of overlay metrology simulator in design of overlay metrology tools for the 65-nm node and beyond, 0000 (24 May 2004); doi: 10.1117/12.535400
Process Control and Characterization I
Proc. SPIE 5375, Effects of different processing conditions on line-edge roughness for 193-nm and 157-nm resists, 0000 (24 May 2004); doi: 10.1117/12.537339
Proc. SPIE 5375, Across-wafer CD uniformity enhancement through control of multizone PEB profiles, 0000 (24 May 2004); doi: 10.1117/12.537121
Proc. SPIE 5375, Assessments on process parameters' influences to the proximity correction, 0000 (24 May 2004); doi: 10.1117/12.536341
Proc. SPIE 5375, Multivariate analysis of a 100-nm process measured by in-line scatterometry, 0000 (24 May 2004); doi: 10.1117/12.535455
Poster Session
Proc. SPIE 5375, Lithography process window analysis with calibrated model, 0000 (24 May 2004); doi: 10.1117/12.532719
Mask-Related Metrology II: Defect Analysis
Metrology Tool Development
Proc. SPIE 5375, An image stitching method to eliminate the distortion of the sidewall in linewidth measurement, 0000 (24 May 2004); doi: 10.1117/12.536692
Mask-Related Metrology II: Defect Analysis
Metrology Tool Development
Proc. SPIE 5375, Comparison of actinic lens characterization by aerial image evaluation and interferometric testing for 157-nm high-NA micro-objectives, 0000 (24 May 2004); doi: 10.1117/12.533313
Overlay and Registration Metrology II
Proc. SPIE 5375, A comparison of methods for in-chip overlay control at the 65-nm node, 0000 (24 May 2004); doi: 10.1117/12.534510
Proc. SPIE 5375, Evaluation of new in-chip and arrayed line overlay target designs, 0000 (24 May 2004); doi: 10.1117/12.539164
Proc. SPIE 5375, Target noise in overlay metrology, 0000 (24 May 2004); doi: 10.1117/12.534515
Proc. SPIE 5375, The estimation of total measurement uncertainty in a multiple metrology tool environment, 0000 (24 May 2004); doi: 10.1117/12.535526
Proc. SPIE 5375, Characterization of a 100-nm 1D pitch standard by metrological SEM and SFM, 0000 (24 May 2004); doi: 10.1117/12.536285
Proc. SPIE 5375, OPC accuracy and process window verification methodology for sub-100-nm node, 0000 (24 May 2004); doi: 10.1117/12.535121
SEM/Scatterometry for Critical Dimension Metrology I
Proc. SPIE 5375, Results of benchmarking of advanced CD-SEMs at the 90-nm CMOS technology node, 0000 (24 May 2004); doi: 10.1117/12.535960
Line-Edge Roughness and 3D Extraction from Top Down Images
Proc. SPIE 5375, Study of 3D metrology techniques as an alternative to cross-sectional analysis at the R&D level, 0000 (24 May 2004); doi: 10.1117/12.534104
Proc. SPIE 5375, 3D features analysis using spectroscopic scatterometry, 0000 (24 May 2004); doi: 10.1117/12.537192
Proc. SPIE 5375, Metrology of LER: influence of line-edge roughness (LER) on transistor performance, 0000 (24 May 2004); doi: 10.1117/12.534631
Proc. SPIE 5375, 193-nm resist roughness characterization and process propagation investigation using a CD-SEM, 0000 (24 May 2004); doi: 10.1117/12.535214
Proc. SPIE 5375, Improved etch and CMP process control using in-line AFM, 0000 (24 May 2004); doi: 10.1117/12.535967
SEM/Scatterometry for Critical Dimension Metrology I
Proc. SPIE 5375, Preliminary evaluation of line-edge roughness metrology based on CD-SAXS, 0000 (24 May 2004); doi: 10.1117/12.535693
Scatterometry II
Proc. SPIE 5375, Successful application of angular scatterometry to process control in sub-100-nm DRAM device, 0000 (24 May 2004); doi: 10.1117/12.536312
SEM/Scatterometry for Critical Dimension Metrology II
Proc. SPIE 5375, Total measurement uncertainty and total process precision evaluation of a structural metrology approach to monitoring post-CMP processes, 0000 (24 May 2004); doi: 10.1117/12.538051
Critical Dimension Metrology/3D Extraction from Top Down Images
Proc. SPIE 5375, Electrical linewidth metrology for sub-65-nm applications, 0000 (24 May 2004); doi: 10.1117/12.537346
Proc. SPIE 5375, Sub-50-nm isolated line and trench width artifacts for CD metrology, 0000 (24 May 2004); doi: 10.1117/12.536812
Scatterometry II
Proc. SPIE 5375, Correlating scatterometry to CD-SEM and electrical gate measurements at the 90-nm node using TMU analysis, 0000 (24 May 2004); doi: 10.1117/12.538009
Proc. SPIE 5375, Comparison of solutions to the scatterometry inverse problem, 0000 (24 May 2004); doi: 10.1117/12.538662
Proc. SPIE 5375, Optimization of scatterometry parameters for shallow trench isolation (STI) monitor, 0000 (24 May 2004); doi: 10.1117/12.537440